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RB411D_1

Description
0.5 A, 20 V, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size187KB,4 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
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RB411D_1 Overview

0.5 A, 20 V, SILICON, SIGNAL DIODE

RB411D
Diodes
Schottky barrier diode
RB411D
Applications
Low current rectification
External dimensions
(Unit : mm)
Land size figure
(Unit : mm)
1.9
Features
1) Small mold type. (SMD3)
2) Low I
R
3) High reliability.
 -0.05
(3)
2.8±0.2
1.6
-0.1
+0.2
1.0MIN.
0.15
-0.06
+0.1
0.95
0.8MIN.
0½0.1
0.3½0.6
SMD3
(2)
0.95
0.95
1.9±0.2
(1)
0.8±0.1
1.1±0.2
0.01
Construction
Silicon epitaxial planar
Structure
ROHM : SMD3
JEDEC :S0T-346
JEITA : SC-59
week code
Taping specifications
(Unit : mm)
4.0±0.1
2.0±0.05
φ1.5±0.1
      0
1.75±0.1
0.3±0.1
3.5±0.05
8.0±0.2
3.2±0.1
3.2±0.1
4.0±0.1
φ1.05MIN
0½0.5
5.5±0.2
3.2±0.1
1.35±0.1
Absolute maximum ratings
(Ta = 25°C)
Param eter
R evers e voltage (repetitive peak)
Revers e voltage (DC)
Average rectified forward current
*1
Forward current s urge peak
60Hz
1cyc
)(
*1
J unction tem perature
S torage tem perature
(*1) Rating of per diode
Sym bol
V
RM
V
R
Io
I
FSM
Tj
Ts tg
Lim its
40
20
500
3
125
-40 to +125
Unit
V
V
mA
A
Electrical characteristics
(Ta = 25°C)
Param eter
Forwarad voltage
Revers e current
Capacitance between term inal
Sym bol
V
F
1
V
F
2
I
R
1
Ct1
Min.
-
-
-
-
Typ.
-
-
-
20
Max.
0.50
0.30
30
-
Unit
V
V
µA
pF
I
F
=500m A
I
F
=10m A
V
R
=10V
V
R
=10V , f=1MHz
Conditions
Rev.B
2.4
0.4
+0.1
2.9±0.2
各リードとも
Each lead has same dimension
同寸法
1/3

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Description 0.5 A, 20 V, SILICON, SIGNAL DIODE 0.5 A, 20 V, SILICON, SIGNAL DIODE
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