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RB471E_1

Description
0.1 A, 2 ELEMENT, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size173KB,4 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
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RB471E_1 Overview

0.1 A, 2 ELEMENT, SILICON, SIGNAL DIODE

RB471E
Diodes
Schottky barrier diode
RB471E
Applications
Low current rectification
External dimensions
(Unit : mm)
Land size figure
(Unit : mm)
0.8MIN.
2.9±0.2
0.3
+0.1
各リードとも同寸法
Each lead has same dimension
2.8±0.2
1.6
+0.2
-0.1
Features
1) Small mold type. (SMD5)
2) High reliability.
 -0.05
0.15±0.1
    0.06
1.0MIN.
(1)
(2)
0.45 0.35 0.35 0.45
0.6
0½0.1
0.3½0.6
0.95 0.95
Construction
Silicon epitaxial planar
(5)
(4)
1.9±0.2
(3)
0.8±0.1
1.1±0.2
0.1
SMD5
1.9
0.95
0.95
Structure
ROHM : SMD5
JEITA : SC-74A
week code
Taping specifications
(Unit : mm)
4.0±0.1
2.0±0.05
φ1.5±0.1
      0
1.75±0.1
0.3±0.1
3.5±0.05
3.2±0.1
5.5±0.2
8.0±0.2
3.2±0.1
4.0±0.1
φ1.0MIN
0½0.5
3.2±0.1
1.35±0.1
Absolute maximum ratings
(Ta=25°C)
Parameter
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current (*1)
Forward current surge peak
(60Hz・1cyc)
(*1)
Junction temperature
Storage temperature
(*1) Rating of per diode
Symbol
V
RM
V
R
Io
I
FSM
Tj
Tstg
Limits
40
40
0.1
1
125
-40 to +125
Unit
V
V
A
A
Electrical characteristics
(Ta=25°C)
Parameter
Forward voltage
Reverse current
Capacitance between terminals
Symbol
V
F
1
V
F
2
I
R
Ct
Min.
-
-
-
-
Typ.
-
-
-
-
Max.
0.55
0.34
30
6
Unit
V
V
µA
pF
I
F
=100mA
I
F
=10mA
V
R
=10V
V
R
=10V , f=1MHz
Conditions
2.4
Rev.B
1/3

RB471E_1 Related Products

RB471E_1 RB471E
Description 0.1 A, 2 ELEMENT, SILICON, SIGNAL DIODE 0.1 A, 2 ELEMENT, SILICON, SIGNAL DIODE

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Index Files: 603  2928  1992  631  2920  13  59  41  43  17 
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