2N5306
2N5306
NPN Darlington Transistor
• This device is designed for applications requiring extremely high
current gain at currents to 1.0A.
• Sourced from process 05.
• See MPSA14 for characteristics.
TO-92
1
1. Emitter 2. Collector 3. Base
Absolute Maximum Ratings *
T
A
=25°C unless otherwise noted
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
STG
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
- Continuous
Operating and Storage Junction Temperature Range
Value
25
25
12
1.2
-55 ~ +150
Units
V
V
V
A
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
T
A
=25°C unless otherwise noted
Symbol
Off Characteristics
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE
(sat)
V
BE
(sat)
V
BE
(on)
C
cb
h
fe
Parameter
Test Condition
I
C
= 10mA, I
B
= 0
I
C
= 0.1µA, I
E
= 0
I
E
= 0.1µA, I
C
= 0
V
CB
= 25V, I
E
= 0
V
CB
= 25V, I
E
= 0, T
a
= 100°C
V
EB
= 12V, I
C
= 0
V
CE
= 5.0V, I
C
= 2.0mA
V
CE
= 5.0V, I
C
= 100mA
I
C
= 200mA, I
B
= 0.2mA
I
C
= 200mA, I
B
= 0.2mA
I
C
= 200mA, V
CE
= 5.0V
V
CB
= 10V, f = 1.0MHz
I
C
= 2.0mA, V
CE
= 5.0V,
f = 1.0KHz
I
C
= 2.0mA, V
CE
= 5.0V,
f = 10MHz
7000
6.0
7,000
20,000
Min.
25
25
12
0.1
20
0.1
70,000
1.4
1.6
1.5
10
V
V
V
pF
Typ.
Max.
Units
V
V
V
µA
µA
µA
Collector-Emitter Breakdown Voltage *
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturatin Voltage
Base-Emitter On Voltage
Collector-Base Capacitance
Small-Signal Current Gain
On Characteristics *
Small Signal Characteristics
* Pulse Test: Pulse Width
≤
300µs, Duty Cycle
≤
2.0%
©2002 Fairchild Semiconductor Corporation
Rev. B1, July 2002
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