CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of
the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1.
θ
JA
is measured with the component mounted on a low effective thermal conductivity test board in free air. See Tech Brief
TB379 for details.
Operating Conditions
Operating Temperature Range . . . . . . . . . . . . . . . . -55
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
Device Tested at: V
SUPPLY
=
±15V,
R
SOURCE
= 50Ω, R
LOAD
= 100kΩ, V
OUT
= 0V, Unless Otherwise Specified.
GROUP A
SUBGROUPS
1
2, 3
Input Bias Current
I
B
V
CM
= 0V,
R
S
= 10kΩ, 50Ω
+I B
+ –
I B
----------------------------
-
2
Input Offset Current
I
IO
V
CM
= 0V,
+R
S
= 10kΩ,
-R
S
= 10kΩ
V+ = +3V, V- = -27V
1
2, 3
1
2, 3
-CMR
V+ = +27V, V- = -3V
1
2, 3
Large Signal Voltage
Gain
+A
VOL
-A
VOL
Common Mode
Rejection Ratio
+CMRR
V
OUT
= 0V and +10V,
R
L
= 2kΩ
V
OUT
= 0V and -10V,
R
L
= 2kΩ
∆V
CM
= 10V,
V+ = +5V, V- = - 25V,
V
OUT
= -10
∆V
CM
= 10V,
V+ = +25V, V- = - 5V,
V
OUT
= +10
R
L
= 2kΩ
R
L
= 2kΩ
R
L
= 600Ω
R
L
= 600Ω
4
5, 6
4
5, 6
1
2, 3
1
2, 3
4
5, 6
-V
OUT1
+V
OUT2
-V
OUT2
4
5, 6
4
4
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C,
LIMITS
TEMPERATURE
+25 C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
o
PARAMETERS
Input Offset Voltage
SYMBOL
V
IO
CONDITIONS
V
CM
= 0V
MIN
-60
-100
-6
-8
MAX
60
100
6
8
UNITS
µV
µV
nA
nA
1
2, 3
-6
-8
12
12
-
-
126
120
126
120
116
110
116
o
6
8
-
-
-12
-12
-
-
-
-
-
-
-
-
-
-
-12
-12
-
-10
nA
nA
V
V
V
V
dB
dB
dB
dB
dB
dB
dB
dB
V
V
V
V
V
V
Common Mode
Range
+CMR
-55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125 C, -55 C
+25
o
C
+125
o
C,
o
-CMRR
110
12
12
-
-
10
-
Output Voltage
Swing
+V
OUT1
-55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+25
o
C
Spec Number
2
511041-883
HA-5177/883
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
Device Tested at: V
SUPPLY
=
±15V,
R
SOURCE
= 50Ω, R
LOAD
= 100kΩ, V
OUT
= 0V, Unless Otherwise Specified.
GROUP A
SUBGROUPS
4
5, 6
-I
OUT
Quiescent Power
Supply Current
+I
CC
-I
CC
Power Supply
Rejection Ratio
+PSRR
V
OUT
= +10V
V
OUT
= 0V, I
OUT
=
0mA
V
OUT
= 0V, I
OUT
=
0mA
∆V
SUP
= 15V,
V+ = +5V, V- = - 15V,
V+ = +20V, V- = - 15V
∆V
SUP
= 15V,
V+ = +15V, V- = - 5V,
V+ = +15V, V- = - 20V
Note 2
4
5, 6
1
2, 3
1
2, 3
1
2, 3
1
2, 3
1
2, 3
-V
IO
Adj
NOTES:
1. The input stage has series 500Ω resistors along with back to back diodes. This provides large differential input voltage protection for a
slight increase in noise voltage.
2. This test is for functionality only to assure adjustment through 0V.
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
Device Tested at: V
SUPPLY
=
±15V,
R
SOURCE
= 50Ω, R
LOAD
= 2kΩ, C
LOAD
= 50pF, A
VCL
= +1V/V, Unless Otherwise Specified.
GROUP A
SUBGROUPS
7
7
7
7
7
7
LIMITS
TEMPERATURE
+25
o
C
LIMITS
TEMPERATURE
+25
o
C
+125 C, -55 C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C,
o
o
PARAMETERS
Output Current
SYMBOL
+I
OUT
CONDITIONS
V
OUT
= -10V
MIN
15
15
-
-
-
-
-1.7
-1.7
110
110
110
110
0.3
0.3
-
-
MAX
-
-
-15
-15
1.7
1.7
-
-
-
-
-
-
-
-
-0.3
-0.3
UNITS
mA
mA
mA
mA
mA
mA
mA
mA
dB
dB
dB
dB
mV
mV
mV
mV
-55
o
C
-PSRR
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
Offset Voltage
Adjustment
+V
IO
Adj
Note 2
1
2, 3
PARAMETERS
Slew Rate
SYMBOL
+SR
-SR
CONDITIONS
V
OUT
= -3V to +3V,
V
IN
S.R.
≤
25V/µs
V
OUT
= +3V to -3V,
V
IN
S.R.
≤
25V/µs
V
OUT
= 0 to +200mV
10%
≤
T
R
≤
90%
V
OUT
= 0 to -200mV
10%
≤
T
F
≤
90%
V
OUT
= 0 to +200mV
V
OUT
= 0 to -200mV
MIN
0.5
0.5
-
-
-
-
MAX
-
-
420
420
40
40
UNITS
V/µs
V/µs
ns
ns
%
%
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
Rise and Fall Time
t
R
t
F
Overshoot
+OS
-OS
Spec Number
3
511041-883
HA-5177/883
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
Device Characterized at: V
SUPPLY
=
±15V,
R
LOAD
= 2kΩ, C
LOAD
= 50pF, A
V
= +1V/V, Unless Otherwise Specified.
LIMITS
PARAMETERS
Average Offset Voltage
Drift
Average Offset Current
Drift
Average Bias Current Drift
Differential Input
Resistance
Low Frequency
Peak-to-Peak Noise Voltage
Low Frequency
Peak-to-Peak Noise Current
Input Noise Voltage
Density
SYMBOL
V
IO
TC
I
IO
TC
I
R
TC
R
IN
E
NP-P
I
NP-P
E
N
CONDITIONS
V
CM
= 0V
Versus Temperature
Versus Temperature
V
CM
= 0V
0.1Hz to 10Hz
0.1Hz to 10Hz
R
S
= 20Ω, f
O
= 10Hz
R
S
= 20Ω, f
O
= 100Hz
R
S
= 20Ω, f
O
= 1kHz
Input Noise Current
Density
I
N
R
S
= 2MΩ, f
O
= 10Hz
R
S
= 2MΩ, f
O
= 100Hz
R
S
= 2MΩ, f
O
= 1kHz
Gain Bandwidth Product
Full Power Bandwidth
Minimum Closed Loop
Stable Gain
Settling Time
Output Resistance
Power Consumption
NOTES:
1. Parameters listed in Table 3 are controlled via design or process parameters and are not directly tested at final production. These param-
eters are lab characterized upon initial design release, or upon design changes. These parameters are guaranteed by characterization
based upon data from multiple production runs which reflect lot to lot and within lot variation.
2. Full Power Bandwidth guarantee based on Slew Rate measurement using FPBW = Slew Rate/(2πV
PEAK
).
3. Power Consumption based upon Quiescent Supply Current test maximum. (No load on outputs.)
GBWP
FPBW
CLSG
t
S
R
OUT
PC
V
O
= 100mV,
1Hz
≤
f
O
≤
100kHz
V
PEAK
= 10V
R
L
= 2kΩ, C
L
= 50pF
To 0.1% for a 10V Step
Open Loop
V
OUT
= 0V, I
OUT
=
0mA
NOTES
1
1
1
1
1
1
1
1
1
1
1
1
1
1, 2
1
1
1
1, 3
TEMPERATURE
-55
o
C to +125
o
C
-55
o
C to +125
o
C
-55
o
C to +125
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25 C
+25
o
C
-55
o
C to +125
o
C
+25
o
C
+25
o
C
-55
o
C to +125
o
C
o
MIN
-
-
-
20
-
-
-
-
-
-
-
-
2
8
+1
-
-
-
MAX
0.6
40
40
-
0.6
45
18
13
11
4
2.3
1
-
-
-
15
70
51
UNITS
µV/
o
C
pA/
o
C
pA/
o
C
MΩ
µV
P-P
pA
P-P
nV/√Hz
nV/√Hz
nV/√Hz
pA/√Hz
pA/√Hz
pA/√Hz
MHz
kHz
V/V
µs
Ω
mW
TABLE 4. ELECTRICAL TEST REQUIREMENTS
MIL-STD-883 TEST REQUIREMENTS
Interim Electrical Parameters (Pre Burn-In)
Final Electrical Test Parameters
Group A Test Requirements
Groups C and D Endpoints
NOTE:
1. PDA applies to Subgroup 1 only.
SUBGROUPS (SEE TABLES 1 AND 2)
1
1 (Note 1), 2, 3, 4, 5, 6, 7
1, 2, 3, 4, 5, 6, 7
1
Spec Number
4
511041-883
HA-5177/883
Die Characteristics
DIE DIMENSIONS:
72 x 103 x 19 mils
±
1 mils
1840 x 2620 x 483µm
±
25.4µm
METALLIZATION:
Type: Al, 1% Cu
Thickness: 16k
Å
±
2k
Å
GLASSIVATION:
Type: Nitride (Si3N4) over Silox (SIO2, 5% Phos.)
Silox Thickness: 12k
Å
±
2k
Å
Nitride Thickness: 3.5k
Å
±
1.5k
Å
WORST CASE CURRENT DENSITY:
6.0 x 10
4
A/cm
2
SUBSTRATE POTENTIAL (Powered Up):
V-
TRANSISTOR COUNT:
71
PROCESS:
Bipolar Dielectric Isolation
Metallization Mask Layout
HA-5177/883
BAL1
V+
OUT
NC
BAL2
-IN
+IN
V-
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Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
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