SPANSION Flash Memory
Data Sheet
TM
September 2003
TM
This document specifies SPANSION memory products that are now offered by both Advanced Micro Devices and
Fujitsu. Although the document is marked with the name of the company that originally developed the specification,
these products will be offered to customers of both AMD and Fujitsu.
Continuity of Specifications
There is no change to this datasheet as a result of offering the device as a SPANSION
revisions will occur when appropriate, and changes will be noted in a revision summary.
TM
product. Future routine
Continuity of Ordering Part Numbers
AMD and Fujitsu continue to support existing part numbers beginning with "Am" and "MBM". To order these
products, please use only the Ordering Part Numbers listed in this document.
For More Information
Please contact your local AMD or Fujitsu sales office for additional information about SPANSION
solutions.
TM
memory
FUJITSU SEMICONDUCTOR
DATA SHEET
DS05-20858-6E
FLASH MEMORY
CMOS
8M (1M
×
8) BIT
MBM29LV008TA
-70/-90
/MBM29LV008BA
-70/-90
s
GENERAL DESCRIPTION
The MBM29LV008TA/BA are a 8M-bit, 3.0 V-only Flash memory organized as 1M bytes of 8 bits each. The
MBM29LV008TA/BA are offered in a 40-pin TSOP(1) package. These devices are designed to be programmed
in-system with the standard system 3.0 V V
CC
supply. 12.0 V V
PP
and 5.0 V V
CC
are not required for write or erase
operations. The devices can also be reprogrammed in standard EPROM programmers.
The standard MBM29LV008TA/BA offer access times 70 ns and 90 ns, allowing operation of high-speed
microprocessors without wait states. To eliminate bus contention the devices have separate chip enable (CE),
write enable (WE), and output enable (OE) controls.
(Continued)
s
PRODUCT LINE UP
Part No.
V
CC
= 3.3 V
Ordering Part No.
V
CC
= 3.0 V
Max Address Access Time (ns)
Max CE Access Time (ns)
Max OE Access Time (ns)
+0.3 V
–0.3 V
+0.6 V
–0.3 V
MBM29LV008TA/MBM29LV008BA
-70
—
70
70
30
—
-90
90
90
35
s
PACKAGES
40-pin plastic TSOP (1)
Marking Side
40-pin plastic TSOP (1)
Marking Side
(FPT-40P-M06)
(FPT-40P-M07)
MBM29LV008TA/BA
-70/90
(Continued)
The MBM29LV008TA/BA are pin and command set compatible with JEDEC standard E
2
PROMs. Commands
are written to the command register using standard microprocessor write timings. Register contents serve as
input to an internal state-machine which controls the erase and programming circuitry. Write cycles also internally
latch addresses and data needed for the programming and erase operations. Reading data out of the devices
is similar to reading from 5.0 V and 12.0 V Flash or EPROM devices.
The MBM29LV008TA/BA are programmed by executing the program command sequence. This will invoke the
Embedded Program Algorithm which is an internal algorithm that automatically times the program pulse widths
and verifies proper cell margin. Typically, each sector can be programmed and verified in about 0.5 seconds.
Erase is accomplished by executing the erase command sequence. This will invoke the Embedded Erase
Algorithm which is an internal algorithm that automatically preprograms the array if it is not already programmed
before executing the erase operation. During erase, the devices automatically time the erase pulse widths and
verify proper cell margin.
Any individual sector is typically erased and verified in 1.0 second. (If already completely preprogrammed.)
The devices also feature a sector erase architecture. The sector mode allows each sector to be erased and
reprogrammed without affecting other sectors. The MBM29LV008TA/BA are erased when shipped from the
factory.
The devices feature single 3.0 V power supply operation for both read and write functions. Internally generated
and regulated voltages are provided for the program and erase operations. A low V
CC
detector automatically
inhibits write operations on the loss of power. The end of program or erase is detected by Data Polling of DQ
7
,
by the Toggle Bit feature on DQ
6
, or the RY/BY output pin. Once the end of a program or erase cycle has been
completed, the devices internally reset to the read mode.
Fujitsu’s Flash technology combines years of EPROM and E
2
PROM experience to produce the highest levels
of quality, reliability, and cost effectiveness. The MBM29LV008TA/BA memories electrically erase the entire chip
or all bits within a sector simultaneously via Fowler-Nordhiem tunneling. The bytes are programmed one byte
at a time using the EPROM programming mechanism of hot electron injection.
2
MBM29LV008TA/BA
-70/90
s
FEATURES
• Single 3.0 V read, program, and erase
Minimizes system level power requirements
• Compatible with JEDEC-standard commands
Uses same software commands as E
2
PROMs
• Compatible with JEDEC-standard world-wide pinouts
40-pin TSOP(1) (Package suffix: PTN – Normal Bend Type, PTR – Reversed Bend Type)
• Minimum 100,000 program/erase cycles
• High performance
70 ns maximum access time
• Sector erase architecture
One 16K byte, two 8K bytes, one 32K byte, and fifteen 64K bytes
Any combination of sectors can be concurrently erased. Also supports full chip erase
• Boot Code Sector Architecture
T = Top sector
B = Bottom sector
• Embedded Erase
TM
Algorithms
Automatically pre-programs and erases the chip or any sector
• Embedded Program
TM
Algorithms
Automatically writes and verifies data at specified address
• Data Polling and Toggle Bit feature for detection of program or erase cycle completion
• Ready/Busy output (RY/BY)
Hardware method for detection of program or erase cycle completion
• Automatic sleep mode
When addresses remain stable, automatically switch themselves to low power mode
• Low V
CC
write inhibit
≤
2.5 V
• Erase Suspend/Resume
Suspends the erase operation to allow a read data in another sector within the same device
• Sector protection
Hardware method disables any combination of sectors from program or erase operations
• Sector Protection Set function by Extended sector protection command
• Temporary sector unprotection
Temporary sector unprotection via the RESET pin
Note : Embedded Erase
TM
and Embedded Program
TM
are trademarks of Advanced Micro Devices, Inc.
3
MBM29LV008TA/BA
-70/90
s
PIN ASSIGNMENTS
TSOP (1)
A
16
A
15
A
14
A
13
A
12
A
11
A
9
A
8
WE
RESET
N.C.
RY/BY
A
18
A
7
A
6
A
5
A
4
A
3
A
2
A
1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
(Marking Side)
MBM29LV008TA/MBM29LV008BA
Normal Bend
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
A
17
V
SS
N.C.
A
19
A
10
DQ
7
DQ
6
DQ
5
DQ
4
V
CC
V
CC
N.C.
DQ
3
DQ
2
DQ
1
DQ
0
OE
V
SS
CE
A
0
(FPT-40P-M06)
A
1
A
2
A
3
A
4
A
5
A
6
A
7
A
18
RY/BY
N.C.
RESET
WE
A
8
A
9
A
11
A
12
A
13
A
14
A
15
A
16
20
19
18
17
16
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
(Marking Side)
MBM29LV008TA/MBM29LV008BA
Reverse Bend
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
A
0
CE
V
SS
OE
DQ
0
DQ
1
DQ
2
DQ
3
N.C.
V
CC
V
CC
DQ
4
DQ
5
DQ
6
DQ
7
A
10
A
19
N.C.
V
SS
A
17
(FPT-40P-M07)
4
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