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BC638_05

Description
PNP medium power transistors
Categorysemiconductor    Discrete semiconductor   
File Size416KB,5 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
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BC638_05 Overview

PNP medium power transistors

BC638 PNP Epitaxial Silicon Transistor
BC638
PNP Epitaxial Silicon Transistor
Switching and Amplifier Applications
• Complement to BC637
1
TO-92
1. Emitter 2. Collector 3. Base
Absolute Maximum Ratings
T
Symbol
V
CER
V
CES
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
J
T
STG
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Collector Current
Base Current
a
= 25°C unless otherwise noted
Parameter
Collector-Emitter Voltage at R
BE
=1KΩ
Value
-60
-60
-60
-5
-1
-1.5
-100
1
150
-65 ~ 150
Units
V
V
V
V
A
A
mA
W
°C
°C
Collector Power Dissipation
Junction Temperature
Storage Temperature
T
a
= 25°C unless otherwise noted
Electrical Characteristics
Symbol
BV
CEO
I
CBO
I
EBO
h
FE1
h
FE2
h
FE3
V
CE
(sat)
V
BE
(on)
f
T
Parameter
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Test Condition
I
C
= -10mA, I
B
=0
V
CB
= -30V, I
E
=0
V
EB
= -5V, I
C
=0
V
CE
= -2V, I
C
= -5mA
V
CE
= -2V, I
C
= -150mA
V
CE
= -2V, I
C
= -500mA
I
C
= -500mA, I
B
= -50mA
V
CE
= -2V, I
C
= -500mA
V
CE
= -5V, I
C
= -10mA,
f=50MHz
Min.
-60
Typ.
Max.
-0.1
-0.1
Units
V
µA
µA
25
40
25
160
-0.5
-1
100
V
V
MHz
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
©2005 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
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