BCW30
BCW30
PNP General Purpose Amplifier
• This device is designed for general purpose medium power amplifiers
and switches requiring collector currents to 300mA.
• Sourced from process 68.
3
2
1
SOT-23
Mark: C2
1. Base 2. Emitter 3. Collector
Absolute Maximum Ratings *
T
C
=25°C unless otherwise noted
Symbol
V
CEO
V
CES
V
EBO
I
C
T
J
, T
stg
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector current
Junction and Storage Temperature
- Continuous
Parameter
Value
-32
-32
-5.0
-500
-55 ~ +150
Units
V
V
V
mA
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
Parameter
Test Condition
I
C
= -10µA, I
E
= 0
I
C
= -2.0mA, I
B
= 0
I
C
= -10µA, I
E
= 0
I
C
= -10µA, I
C
= 0
V
CB
= -32V, I
E
= 0
V
CB
= -32V, I
E
= 0, T
A
= +100°C
V
CE
= -5.0V, I
C
= -2.0mA
I
C
= -10mA, I
B
= -0.5mA
V
CE
= -5.0V, I
C
= -2.0mA
V
CE
= -5.0V, I
C
= -200µA
R
S
= 2.0kΩ, f = 1.0kHz
B
W
= 200Hz
-0.6
215
Min.
-32
-32
-32
-5.0
-100
-10
500
-0.3
-0.7
10
V
V
dB
Typ.
Max.
Units
V
V
V
V
nA
µA
Off Characteristics
Collector-Base Breakdown Voltage
V
(BR)CBO
V
(BR)CEO
V
(BR)CES
V
(BR)EBO
I
CBO
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
On Characteristics
h
FE
V
CE(sat)
V
BE(on)
NF
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Noise Figure
Small Signal Characteristics
Thermal Characteristics
T
A
=25°C unless otherwise noted
Symbol
P
D
R
θJA
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient
Parameter
Max.
350
2.8
357
Units
mW
mW/°C
°C/W
©2002 Fairchild Semiconductor Corporation
Rev. B1, August 2002
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2
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I
2
C™
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when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
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The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
©2002 Fairchild Semiconductor Corporation
Rev. I1
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