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BS170

Description
500 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
CategoryDiscrete semiconductor    The transistor   
File Size477KB,13 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Environmental Compliance
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BS170 Overview

500 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92

BS170 Parametric

Parameter NameAttribute value
Brand NameFairchild Semiconductor
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerFairchild
Parts packaging codeTO-92
package instructionCYLINDRICAL, O-PBCY-T3
Contacts3
Manufacturer packaging code3LD, TO-92, MOLDED, STD STRAIGHT LD (NO EOL CODE)
Reach Compliance Codecompliant
ECCN codeEAR99
Samacsys DescriptionN-channel JFET,BF245A 2mA 30V,BP
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage60 V
Maximum drain current (Abs) (ID)0.5 A
Maximum drain current (ID)0.5 A
Maximum drain-source on-resistance5 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)10 pF
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
JESD-609 codee1
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)0.83 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Silver/Copper (Sn/Ag/Cu)
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
April 1995
BS170 / MMBF170
N-Channel Enhancement Mode Field Effect Transistor
General Description
These
N-Channel enhancement mode field effect
transistors are produced using Fairchild's proprietary, high
cell density, DMOS technology. These products have been
designed to minimize on-state resistance while provide
rugged, reliable, and fast switching performance. They can
be used in most applications requiring up to 500mA DC.
These products are particularly suited for low voltage, low
current applications such as small servo motor control,
power MOSFET gate drivers, and other switching
applications.
Features
High density cell design for low R
DS(ON)
.
Voltage controlled small signal switch.
Rugged and reliable.
High saturation current capability.
____________
___________________________________________________________________
D
G
S
Absolute Maximum Ratings
Symbol
V
DSS
V
DGR
V
GSS
I
D
P
D
T
J
,T
STG
T
L
Parameter
Drain-Source Voltage
T
A
= 25°C unless otherwise noted
BS170
60
60
± 20
500
1200
830
6.6
-55 to 150
300
MMBF170
Units
V
V
V
Drain-Gate Voltage (R
GS
< 1M
)
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
Maximum Power Dissipation
Derate Above 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering
Purposes, 1/16" from Case for 10 Seconds
500
800
300
2.4
mA
mW
mW/°C
°C
°C
THERMAL CHARACTERISTICS
R
θ
JA
Thermal Resistacne, Junction-to-Ambient
150
417
°C/W
© 1997 Fairchild Semiconductor Corporation
BS170 Rev. C / MMBF170 Rev. D

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Description 500 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 500 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
Number of components 1 1
Number of terminals 3 3
Terminal form THROUGH-HOLE THROUGH-hole
Terminal location BOTTOM BOTTOM
transistor applications SWITCHING switch
Transistor component materials SILICON silicon
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