UNISONIC TECHNOLOGIES CO., LTD
2SB647
SILICON PNP EPITAXIAL
APPLICATION
PNP EPITAXIAL SILICON TRANSISTOR
* Low frequency power amplifier
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
2SB647L-x-T9N-B
2SB647G-x-T9N-B
2SB647L-x-T9N-K
2SB647G-x-T9N-K
Package
TO-92NL
TO-92NL
Pin Assignment
1
2
3
E
C
B
E
C
B
Packing
Tape Box
Bulk
www.unisonic.com.tw
Copyright © 2013 Unisonic Technologies Co., Ltd
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PNP EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
(T
A
=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
V
CBO
-120
V
Collector-Emitter Voltage
V
CEO
-80
V
Emitter-Base Voltage
V
EBO
-5
V
Collector Current
I
C
-1
A
Collector Peak Current
I
C(peak)
-2
A
Collector Power Dissipation
P
C
0.9
W
Junction Temperature
T
J
150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Note 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. The device is guaranteed to meet performance specification within 0°C ~70°C operating temperature range
and assured by design from –20°C ~85°C.
ELECTRICAL CHARACTERISTICS
(T
A
=25°C, unless otherwise specified)
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
h
FE1
h
FE2
V
CE(sat)
V
BE
f
T
C
ob
TEST CONDITIONS
I
C
= -10µA, I
E
=0
I
C
= -1mA,R
BE
=∞
I
E
= -10A, I
C
=0
V
CB
= -100V, I
E
=0
V
CE
= -5V, I
C
= -150mA (note)
V
CE
= -5V, I
C
= -500mA (note)
I
C
= -500mA, I
B
= -50 mA (note)
V
CE
= -5V, I
C
= -150mA (note)
V
CE
= -5V, I
C
= -150mA
V
CB
= -10V, I
E
=0,f=1MHz
MIN
-120
-80
-5
60
30
TYP MAX UNIT
V
V
V
-10
μA
320
-1
-1.5
140
20
V
V
MHz
pF
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
DC Current Transfer Ratio
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Gain Bandwidth Product
Collector Output Capacitance
Note: Pulse test
CLASSIFICATION OF h
FE1
RANK
RANGE
B
60-120
C
100-200
D
160-320
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www.unisonic.com.tw
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TYPICAL CHARACTERISTICS
Maximum Collector Dissipation Curve
Collector Current, Ic (A)
PNP EPITAXIAL SILICON TRANSISTOR
Collector Power Dissipation, Pc (W)
1.2
-1.0
-0.8
-0.6
-0.4
-0.2
0
Typical Output Characteristics
-120
-100
-80
-60
-40
-30
-20
-10
-5
I
B
=0
0.8
0.4
-2
-1
Pc =0.9W
-0.5m A
0
50
100
150
Ambient Temperature, Ta (℃)
-2
-4
-6
-8
-10
Collector to Emitter Voltage, V
CE
(V)
Collector Current, Ic (mA)
-200
-100
-50
-20
-10
-5
-2
-1
0
V
CE
=-5V
PULSE
DC Current Transfer Ratio, h
FE
-500
Typical Transfer Characteristics
DC Current Transfer Ratio vs.Collector Current
600
V
CE
=-5V
500
PULSE
400
300
200
100
0
-1
Ta=75
℃
Ta=25
℃
Ta=-25
℃
Ta
=7
5
℃
Ta=2
5
℃
Ta=
-25
℃
-1.0
-0.2
-0.4
-0.6 -0.8
Base to Emitter Voltage, V
BE
(V)
-100 -300 -1000
-3 -10 -30
Collector Current, Ic (mA)
Collector to Emitter Saturation Voltage, V
CE(sat)
(V)
Base to Emitter Saturation Voltage, V
BE(sat)
(V)
5
Ta=2 Ta=75
UNISONIC TECHNOLOGIES CO., LTD
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Gain Bandwidth Product, f
T
(MHz)
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TYPICAL CHARACTERISTICS (Cont.)
Collector Output Capacitance
vs.Collector to Base Voltage
f= 1 MHz
I
E
=0
PNP EPITAXIAL SILICON TRANSISTOR
200
100
50
20
10
5
2
-1
-2
-5 -10 -20
-50 -100
Collector to Base Voltage, V
CB
(V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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