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KST4123L99Z

Description
Small Signal Bipolar Transistor, 0.2A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon
CategoryDiscrete semiconductor    The transistor   
File Size43KB,3 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
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KST4123L99Z Overview

Small Signal Bipolar Transistor, 0.2A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon

KST4123L99Z Parametric

Parameter NameAttribute value
MakerFairchild
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)0.2 A
Collector-emitter maximum voltage30 V
ConfigurationSINGLE
Minimum DC current gain (hFE)25
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Transistor component materialsSILICON
Nominal transition frequency (fT)250 MHz
Base Number Matches1
KST4123
KST4123
General Purpose Transistor
3
2
1
SOT-23
1. Base 2. Emitter 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
STG
R
TH
(j-a)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Storage Temperature
Thermal Resistance junction to Ambient
Parameter
Value
40
30
5
200
350
150
357
Units
V
V
V
mA
mW
°C
°C/W
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
ib
C
ob
NF
Parameter
Collector-Base Breakdown Voltage
* Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
* DC Current Gain
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Input Capacitance
Output Capacitance
Noise Figure
Test Condition
I
C
=10µA, I
E
=0
I
C
=1mA, I
E
=0
I
E
=10µA, I
C
=0
V
CB
=20V, I
E
=0
V
EB
=3V, I
C
=0
V
CE
=1V, I
C
=2mA
V
CE
=1V, I
C
=50mA
I
C
=50mA, I
B
=5mA
I
C
=50mA, I
B
=5mA
V
CE
=20V, I
C
=10mA, f=100MHz
V
BE
=0.5V, I
C
=0, f=100KHz
V
CB
=5V, I
E
=0, f=100KHz
V
CE
=5V, I
C
=100µA, R
S
=1KΩ
Noise Bandwidth=10Hz to 15.7KHz
250
8
4
6
50
25
Min.
40
30
5
50
50
150
0.3
0.95
V
V
MHz
pF
pF
dB
Max.
Units
V
V
V
nA
nA
* Pulse Test: PW≤300µs, Duty Cycle≤2%
Marking
5B
©2001 Fairchild Semiconductor Corporation
Rev. A1, July 2001

KST4123L99Z Related Products

KST4123L99Z KST4123D87Z KST4123S62Z
Description Small Signal Bipolar Transistor, 0.2A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon Small Signal Bipolar Transistor, 0.2A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon Small Signal Bipolar Transistor, 0.2A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon
Maker Fairchild Fairchild Fairchild
package instruction SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code unknown unknown unknown
ECCN code EAR99 EAR99 EAR99
Maximum collector current (IC) 0.2 A 0.2 A 0.2 A
Collector-emitter maximum voltage 30 V 30 V 30 V
Configuration SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 25 25 25
JESD-30 code R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
Number of components 1 1 1
Number of terminals 3 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Polarity/channel type NPN NPN NPN
Certification status Not Qualified Not Qualified Not Qualified
surface mount YES YES YES
Terminal form GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL
Transistor component materials SILICON SILICON SILICON
Nominal transition frequency (fT) 250 MHz 250 MHz 250 MHz
Base Number Matches 1 1 -

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