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IRFD110PBF

Description
1000 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
Categorysemiconductor    Discrete semiconductor   
File Size2MB,8 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
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IRFD110PBF Overview

1000 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET

IRFD110PBF Parametric

Parameter NameAttribute value
Number of terminals3
Minimum breakdown voltage100 V
Processing package descriptionROHS COMPLIANT, HEXDIP-4
Lead-freeYes
EU RoHS regulationsYes
stateTRANSFERRED
packaging shapeRectangle
Package SizeIN-line
Terminal formTHROUGH-hole
terminal coatingNOT SPECIFIED
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
structureSingle WITH BUILT-IN diode
Shell connectionDRAIN
Number of components1
transistor applicationsswitch
Transistor component materialssilicon
Channel typeN channel
field effect transistor technologyMetal-OXIDE SEMICONDUCTOR
operating modeENHANCEMENT
Transistor typeUniversal small signal
Maximum leakage current1 A
Maximum drain on-resistance0.5400 ohm
PD- 95927
IRFD110PbF
•
Lead-Free
www.irf.com
1
10/27/04
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