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IRLU3705ZPbF

Description
42 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
CategoryDiscrete semiconductor    The transistor   
File Size349KB,11 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Environmental Compliance
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IRLU3705ZPbF Overview

42 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA

IRLU3705ZPbF Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerInternational Rectifier ( Infineon )
Parts packaging codeTO-251AA
package instructionLEAD FREE, PLASTIC, IPAK-3
Contacts3
Reach Compliance Code_compli
ECCN codeEAR99
Other featuresAVALANCHE RATED, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE
Avalanche Energy Efficiency Rating (Eas)190 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage55 V
Maximum drain current (Abs) (ID)89 A
Maximum drain current (ID)42 A
Maximum drain-source on-resistance0.008 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-251AA
JESD-30 codeR-PSIP-T3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)130 W
Maximum pulsed drain current (IDM)360 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceMatte Tin (Sn) - with Nickel (Ni) barrie
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
PD - 95956
AUTOMOTIVE MOSFET
Features
l
l
l
l
l
l
l
IRLR3705ZPbF
IRLU3705ZPbF
HEXFET
®
Power MOSFET
D
Description
Logic Level
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
V
DSS
= 55V
R
DS(on)
= 8.0mΩ
G
S
Specifically designed for Automotive applications,
this HEXFET
®
Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating . These features com-
bine to make this design an extremely efficient and
reliable device for use in Automotive applications
and a wide variety of other applications.
I
D
= 42A
D-Pak
IRLR3705Z
Max.
89
63
42
360
130
0.88
± 16
I-Pak
IRLU3705Z
Units
A
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
(Silicon Limited)
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V
(Package Limited)
Pulsed Drain Current
I
DM
™
P
D
@T
C
= 25°C Power Dissipation
V
GS
Linear Derating Factor
Gate-to-Source Voltage
W
W/°C
V
mJ
A
mJ
E
AS (Thermally limited)
Single Pulse Avalanche Energy
Single Pulse Avalanche Energy Tested Value
E
AS
(Tested )
I
AR
E
AR
T
J
T
STG
Avalanche Current
d
Ù
h
110
190
See Fig.12a, 12b, 15, 16
-55 to + 175
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
g
°C
300 (1.6mm from case )
10 lbf in (1.1N m)
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
R
θJC
R
θJA
R
θJA
Junction-to-Case
Junction-to-Ambient (PCB mount)
ij
Junction-to-Ambient
j
y
y
j
Parameter
Typ.
–––
–––
–––
Max.
1.14
40
110
Units
°C/W
HEXFET
®
is a registered trademark of International Rectifier.
www.irf.com
1
12/21/04

IRLU3705ZPbF Related Products

IRLU3705ZPbF IRLR3705ZPBF
Description 42 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA 42 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
Is it lead-free? Lead free Lead free
Is it Rohs certified? conform to conform to
Maker International Rectifier ( Infineon ) International Rectifier ( Infineon )
Parts packaging code TO-251AA TO-252AA
package instruction LEAD FREE, PLASTIC, IPAK-3 LEAD FREE, PLASTIC, DPAK-3
Contacts 3 3
Reach Compliance Code _compli _compli
ECCN code EAR99 EAR99
Other features AVALANCHE RATED, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE AVALANCHE RATED, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE
Avalanche Energy Efficiency Rating (Eas) 190 mJ 190 mJ
Shell connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 55 V 55 V
Maximum drain current (Abs) (ID) 89 A 89 A
Maximum drain current (ID) 42 A 42 A
Maximum drain-source on-resistance 0.008 Ω 0.008 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-251AA TO-252AA
JESD-30 code R-PSIP-T3 R-PSSO-G2
JESD-609 code e3 e3
Humidity sensitivity level 1 1
Number of components 1 1
Number of terminals 3 2
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 175 °C 175 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form IN-LINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 260
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 130 W 130 W
Maximum pulsed drain current (IDM) 360 A 360 A
Certification status Not Qualified Not Qualified
surface mount NO YES
Terminal surface Matte Tin (Sn) - with Nickel (Ni) barrie Matte Tin (Sn) - with Nickel (Ni) barrie
Terminal form THROUGH-HOLE GULL WING
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature 30 30
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
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