specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers.
This MOSFET features faster switching and lower gate
change than other MOSFETs with comparable R
DS(ON)
specifications resulting in DC/DC power supply designs
with higher overall efficiency.
Features
•
10 A, 80 V.
R
DS(ON)
= 20 mΩ @ V
GS
= 10 V
R
DS(ON)
= 23 mΩ @ V
GS
= 6 V
•
Fast switching speed
•
High performance trench technology for extremely
low R
DS(ON)
•
High power and current handling capability
D
D
G
S
TO-252
S
G
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
T
A
=25
o
C unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Maximum Drain Current-Continuous
Maximum Drain Current – Pulsed
(Note 1)
(Note 1a)
Ratings
80
±
20
43
10
110
o
Units
V
V
A
P
D
Maximum Power Dissipation @T
C
= 25 C
T
A
= 25 C
T
A
= 25 C
o
o
(Note 1)
(Note 1a)
(Note 1b)
69
3.4
1.3
-55 to +150
W
T
J
, T
STG
Operating and Storage Junction Temperature Range
°C
Thermal Characteristics
R
θJC
R
θJA
Thermal Resistance, Junction-to- Case
Thermal Resistance, Junction-to- Ambient
(Note 1)
(Note 1b)
1.8
96
°C/W
°C/W
Package Marking and Ordering Information
Device Marking
FDD3570
Device
FDD3570
Reel Size
13’’
Tape width
16mm
Quantity
2500
2000
Fairchild Semiconductor Corporation
FDD3570 Rev C(W)
FDD3570
Electrical Characteristics
Symbol
W
DSS
I
AR
T
A
= 25°C unless otherwise noted
Parameter
Single Pulse Drain-Source
Avalanche Energy
Maximum Drain-Source Avalanche
Current
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
(Note 2)
Test Conditions
V
DD
= 40 V,
I
D
= 10 A
Min
Typ
Max
360
10
Units
mJ
A
Drain-Source Avalanche Ratings
(Note 2)
Off Characteristics
BV
DSS
∆BV
DSS
===∆T
J
I
DSS
I
GSSF
I
GSSR
V
GS
= 0 V, I
D
= 250
µA
I
D
= 250
µA,
Referenced to 25°C
V
DS
= 64 V,
V
GS
= 20 V,
V
GS
= –20 V,
V
GS
= 0 V
V
DS
= 0 V
V
DS
= 0 V
80
78
1
100
–100
V
mV/°C
µA
nA
nA
On Characteristics
V
GS(th)
∆V
GS(th)
===∆T
J
R
DS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On–State Drain Current
Forward Transconductance
V
DS
= V
GS
, I
D
= 250
µA
I
D
= 250
µA,
Referenced to 25°C
V
GS
= 10 V, I
D
= 10 A
V
GS
= 10 V, I
D
= 10 A,T
J
=125°C
V
GS
= 6 V, I
D
= 9 A
V
GS
= 10 V,
V
DS
= 5 V
V
DS
= 5 V,
I
D
= 14 A
2
2.4
-7
15
27
16
4
V
mV/°C
20
40
23
mΩ
I
D(on)
g
FS
25
40
A
S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(Note 2)
V
DS
= 40 V,
f = 1.0 MHz
V
GS
= 0 V,
2800
230
117
pF
pF
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
V
DD
= 40 V,
V
GS
= 10 V,
I
D
= 1 A,
R
GEN
= 6
Ω
20
12
60
24
32
24
95
38
76
ns
ns
ns
ns
nC
nC
nC
V
DS
= 40V,
V
GS
= 10 V,
I
D
= 9 A,
54
9.6
14
Drain–Source Diode Characteristics and Maximum Ratings
I
S
V
SD
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
V
GS
= 0 V,
I
S
= 2.8 A
(Note 2)
2.8
0.72
1.2
A
V
Notes:
1.
R
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
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