FDS6676AS 30V N-Channel PowerTrench SyncFET
November
2005
FDS6676AS
30V N-Channel PowerTrench
®
SyncFET
™
General Description
The FDS6676AS is designed to replace a single SO-8
MOSFET and Schottky diode in synchronous DC:DC
power supplies. This 30V MOSFET is designed to
maximize power conversion efficiency, providing a low
and low gate charge.
The FDS6676AS
R
DS(ON)
includes an integrated Schottky diode using Fairchild’s
monolithic SyncFET technology.
Features
•
14.5 A, 30 V.
R
DS(ON)
max= 6.0 mΩ @ V
GS
= 10 V
R
DS(ON)
max= 7.25 mΩ @ V
GS
= 4.5 V
•
•
•
Includes SyncFET Schottky body diode
Low gate charge (45nC typical)
High performance trench technology for extremely low
R
DS(ON)
and fast switching
•
High power and current handling capability
Applications
•
DC/DC converter
•
Low side notebook
D
D
D
D
5
6
4
3
2
1
SO-8
S
S
S
G
7
8
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
– Continuous
– Pulsed
T
A
=25
o
C unless otherwise noted
Parameter
Ratings
30
±20
(Note 1a)
Units
V
V
A
W
14.5
50
2.5
1.2
1
–55 to +150
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
T
J
, T
STG
Operating and Storage Junction Temperature Range
°C
Thermal Characteristics
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
50
25
°C/W
Package Marking and Ordering Information
Device Marking
FDS6676AS
FDS6676AS
Device
FDS6676AS
FDS6676AS_NL
(Note 3)
Reel Size
13’’
13’’
Tape width
12mm
12mm
Quantity
2500 units
2500 units
FDS6676AS Rev B
©2004
Fairchild Semiconductor Corporation
FDS6676AS 30V N-Channel PowerTrench SyncFET
Electrical Characteristics
Symbol
BV
DSS
∆BV
DSS
∆T
J
I
DSS
I
GSS
T
A
= 25°C unless otherwise noted
Parameter
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage
(Note 2)
Test Conditions
V
GS
= 0 V,
I
D
= 1 mA
Min
30
Typ
Max Units
V
Off Characteristics
I
D
= 1 mA, Referenced to 25°C
V
DS
= 24 V,
V
GS
=
±20
V,
V
GS
= 0 V
V
DS
= 0 V
28
500
±100
mV/°C
µA
nA
On Characteristics
V
GS(th)
∆V
GS(th)
∆T
J
R
DS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On–State Drain Current
Forward Transconductance
V
DS
= V
GS
,
I
D
= 1 mA
1
I
D
= 1 mA, Referenced to 25°C
V
GS
= 10 V,
I
D
= 14.5 A
I
D
= 13.2 A
V
GS
= 4.5 V,
V
GS
=10 V, I
D
=14.5A, T
J
=125°C
V
GS
= 10 V,
V
DS
= 10 V,
V
DS
= 5 V
I
D
= 14.5 A
50
1.5
–3.3
4.5
5.9
6.7
66
3
V
mV/°C
6.0
7.25
8.5
mΩ
I
D(on)
g
FS
A
S
Dynamic Characteristics
C
iss
C
oss
C
rss
R
G
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
(Note 2)
V
DS
= 15 V,
f = 1.0 MHz
V
GS
= 15 mV,
V
GS
= 0 V,
2510
710
270
pF
pF
pF
2.8
Ω
f = 1.0 MHz
1.6
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
Q
g
(TOT)
Q
g
Q
gs
Q
gd
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
V
DD
= 15 V,
V
GS
= 10 V,
I
D
= 1 A,
R
GEN
= 6
Ω
10
12
43
29
20
22
69
46
31
35
54
46
63
35
ns
ns
ns
ns
ns
ns
ns
ns
nC
nC
nC
nC
V
DD
= 15 V,
V
GS
= 4.5 V,
I
D
= 1 A,
R
GEN
= 6
Ω
17
22
34
29
45
Total Gate Charge at Vgs=10V
Total Gate Charge at Vgs=5V
Gate–Source Charge
Gate–Drain Charge
V
DD
= 15 V,
I
D
= 14.5 A,
25
7
8
FDS6676AS Rev B
FDS6676AS 30V N-Channel PowerTrench SyncFET
Electrical Characteristics
Symbol
V
SD
t
rr
I
RM
Q
rr
T
A
= 25°C unless otherwise noted
Parameter
Drain–Source Diode Forward
Voltage
Diode Reverse Recovery Time
Diode Reverse Recovery Current
Diode Reverse Recovery Charge
Test Conditions
V
GS
= 0 V, I
S
= 3.5 A
V
GS
= 0 V, I
S
= 7 A
I
F
= 14.5A,
d
iF
/d
t
= 300 A/µs
Min
Typ
0.4
0.5
27
1.9
26
Max Units
0.7
V
nS
A
nC
Drain–Source Diode Characteristics and Maximum Ratings
(Note 2)
(Note 2)
(Note 3)
Notes:
1.
R
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θJC
is guaranteed by design while R
θCA
is determined by the user's board design.
a) 50°/W when
mounted on a 1 in
2
pad of 2 oz copper
b) 105°/W when
mounted on a .04 in
2
pad of 2 oz copper
c) 125°/W when mounted on a
minimum pad.
See “SyncFET Schottky body diode
characteristics” below
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
3.
FDS6676AS_NL is a lead free product. The FDS6676AS_NL marking will appear on the reel label.
FDS6676AS Rev B
FDS6676AS 30V N-Channel PowerTrench SyncFET
Typical Characteristics
50
V
GS
= 10V
3.5V
2.4
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
2.2
2
1.8
1.6
3.5V
V
GS
= 3.0V
I
D
, DRAIN CURRENT (A)
40
6.0V
4.5V
3.0V
30
20
1.4
1.2
1
0.8
4.0V
4.5V
6.0V
10V
10
2.5V
0
0
0.25
0.5
0.75
V
DS
, DRAIN-SOURCE VOLTAGE (V)
1
0
10
20
30
I
D
, DRAIN CURRENT (A)
40
50
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.016
1.4
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
R
DS(ON)
, ON-RESISTANCE (OHM)
I
D
= 14.5A
V
GS
=10V
I
D
= 7.3 A
0.014
1.2
0.012
1
0.01
T
A
= 125 C
0.008
o
0.8
0.006
T
A
= 25
o
C
0.6
-55
-35
-15
5
25
45
65
85
o
T
J
, JUNCTION TEMPERATURE ( C)
105
125
0.004
2
4
6
8
V
GS
, GATE TO SOURCE VOLTAGE (V)
10
Figure 3. On-Resistance Variation with
Temperature.
50
V
DS
= 5V
I
S
, REVERSE DRAIN CURRENT (A)
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
V
GS
= 0V
10
o
40
I
D
, DRAIN CURRENT (A)
30
T
A
= 125
o
C
20
25 C
10
o
1
T
A
= 125 C
-55
o
C
25
o
C
0.1
-55
o
C
0.01
0
1
1.5
2
2.5
3
V
GS
, GATE TO SOURCE VOLTAGE (V)
3.5
0.001
0
0.2
0.4
0.6
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
0.8
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS6676AS Rev B
FDS6676AS 30V N-Channel PowerTrench SyncFET
Typical Characteristics
(continued)
10
V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
= 14.5A
3500
3000
20V
f = 1MHz
V
GS
= 0 V
8
CAPACITANCE (pF)
V
DS
= 10V
2500
C
iss
6
15V
2000
1500
C
oss
4
1000
500
C
rss
2
0
0
10
20
30
Q
g
, GATE CHARGE (nC)
40
50
0
0
5
10
15
20
25
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
30
Figure 7. Gate Charge Characteristics.
100
R
DS(ON)
LIMIT
100us
1ms
10ms
100ms
1s
P(pk), PEAK TRANSIENT POWER (W)
50
Figure 8. Capacitance Characteristics.
I
D
, DRAIN CURRENT (A)
10
40
SINGLE PULSE
R
θ
JA
= 125°C/W
T
A
= 25°C
30
1
10s
DC
V
GS
= 10V
SINGLE PULSE
o
R
θ
JA
= 125 C/W
T
A
= 25 C
o
20
0.1
10
0.01
0.01
0.1
1
10
V
DS
, DRAIN-SOURCE VOLTAGE (V)
100
0
0.001
0.01
0.1
1
t
1
, TIME (sec)
10
100
1000
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
1
D = 0.5
0.2
R
θJC
(t) = r(t) * R
θJC
R
θJC
= 125 °C/W
0.1
0.1
0.05
0.02
P(pk
0.01
0.01
t
1
t
2
T
J
- T
C
= P * R
θJC
(t)
Duty Cycle, D = t
1
/ t
2
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
t
1
, TIME (sec)
1
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS6676AS Rev B
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