designed specifically to improve the overall efficiency of
DC/DC converters using either synchronous or
conventional switching PWM controllers.
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
RDS(ON) specifications.
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
Features
•
6 A, 30 V.
R
DS(ON)
= 0.028
Ω
@ V
GS
= 10 V
R
DS(ON)
= 0.042
Ω
@ V
GS
= 4.5 V.
•
Optimized for use in switching DC/DC converters
with PWM controllers
•
Very fast switching.
•
Low gate charge
D1
D1
D2
D2
S1
G1
5
6
7
Q1
4
3
2
Q2
SO-8
S2
8
1
G2
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
– Continuous
– Pulsed
T
A
=25 C unless otherwise noted
o
Parameter
Ratings
30
±25
(Note 1a)
Units
V
V
A
W
6
20
2
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
1.6
1
0.9
-55 to +150
°C
T
J
, T
stg
Operating and Storage Junction Temperature Range
Thermal Characteristics
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
78
40
°C/W
°C/W
Package Marking and Ordering Information
Device Marking
FDS6912
Device
FDS6912
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
2000
Fairchild Semiconductor Corporation
FDS6912 Rev F (W)
FDS6912
Electrical Characteristics
Symbol
BV
DSS
∆BV
DSS
∆T
J
I
DSS
I
GSSF
I
GSSR
T
A
= 25°C unless otherwise noted
Parameter
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
(Note 2)
Test Conditions
V
GS
= 0 V, I
D
= 250
µA
I
D
= 250
µA,
Referenced to 25°C
V
DS
= 24 V,
V
GS
= 25 V,
V
GS
= –25 V
V
GS
= 0 V
T
J
= 55°C
V
DS
= 0 V
V
DS
= 0 V
Min
30
Typ
Max Units
V
Off Characteristics
20
1
10
100
–100
mV/°C
µA
nA
nA
On Characteristics
V
GS(th)
∆V
GS(th)
∆T
J
R
DS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On–State Drain Current
Forward Transconductance
V
DS
= V
GS
, I
D
= 250
µA
I
D
= 250
µA,
Referenced to 25°C
V
GS
= 10 V,
V
GS
= 4.5 V,
I
D
= 6 A
T
J
= 125°C
I
D
= 4.9 A
V
DS
= 5 V
I
D
= 6 A
1
2
–5
0.024
0.034
0.035
3
V
mV/°C
Ω
0.028
0.048
0.042
I
D(on)
g
FS
V
GS
= 10 V,
V
DS
= 10 V,
20
20
A
S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(Note 2)
V
DS
= 15 V,
f = 1.0 MHz
V
GS
= 0 V,
740
170
75
pF
pF
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
V
DD
= 15 V,
V
GS
= 10 V,
I
D
= 1 A,
R
GEN
= 6
Ω
8
13
18
8
16
24
29
16
10
ns
ns
ns
ns
nC
nC
nC
V
DS
= 10 V,
V
GS
= 5 V
I
D
= 6 A,
7
3.8
2.5
Drain–Source Diode Characteristics and Maximum Ratings
I
S
V
SD
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
V
GS
= 0 V,
I
S
= 1.3 A
(Note 2)
1.3
0.75
1.2
A
V
Notes:
1.
R
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
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