FDZ291P_06 datasheet, PDF - EEWORLD Datasheet

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FDZ291P_06: DescriptionP-Channel 1.5 V Specified PowerTrench㈢ BGA MOSFET; File Size238KB，6 Pages; ManufacturerFairchild; Websitehttp://www.fairchildsemi.com/

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FDZ291P_06 Overview

P-Channel 1.5 V Specified PowerTrench㈢ BGA MOSFET

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FDZ291P P-Channel 1.5 V Specified PowerTrench

BGA MOSFET

February 2006

FDZ291P

P-Channel 1.5 V Specified PowerTrench

BGA MOSFET

General Description

Combining Fairchild’s advanced 1.5V specified

PowerTrench process with state of the art BGA

packaging, the FDZ291P minimizes both PCB space

and R

DS(ON)

This BGA MOSFET embodies a

breakthrough in packaging technology which enables

the device to combine excellent thermal transfer

characteristics, high current handling capability, ultra-

low profile packaging, low gate charge, and low R

DS(ON)

Features

•

–4.6 A, –20 V

DS(ON)

= 40 mΩ @ V

= –4.5 V

DS(ON)

= 60 mΩ @ V

= –2.5 V

DS(ON)

= 160 mΩ @ V

= –1.5 V

•

Occupies only 2.25 mm

of PCB area.

Less than 50% of the area of a SSOT-6

•

Ultra-thin package: less than 0.85 mm height when

mounted to PCB

•

Outstanding thermal transfer characteristics:

4 times better than SSOT-6

•

Ultra-low Q

x R

DS(ON)

figure-of-merit

•

High power and current handling capability.

Applications

•

Battery management

•

Load switch

•

Battery protection

GATE

Bottom

Top

=25 C unless otherwise noted

Absolute Maximum Ratings

Symbol

DSS

GSS

, T

STG

Drain-Source Voltage

Gate-Source Voltage

Drain Current

– Continuous

– Pulsed

Parameter

Ratings

–20

±8

(Note 1a)

Units

°C

–4.6

–10

1.7

–55 to +150

Power Dissipation for Single Operation

(Note 1a)

Operating and Storage Junction Temperature Range

Thermal Characteristics

θJA

θJC

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

(Note 1a)

°C/W

Package Marking and Ordering Information

Device Marking

Device

FDZ291P

Reel Size

13”

Tape width

8mm

Quantity

10000 units

Fairchild Semiconductor Corporation

FDZ291P Rev. C2 (W)

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