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NX5312EK-AZ

Description
1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, InGaAsP MQW-FP LASER DIODE
File Size198KB,7 Pages
ManufacturerCEL
Websitehttp://www.cel.com/
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NX5312EK-AZ Overview

1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, InGaAsP MQW-FP LASER DIODE

LASER DIODE
NX5312 Series
1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s,
InGaAsP MQW-FP LASER DIODE
DESCRIPTION
The NX5312 Series is a 1 310 nm Multiple Quantum Well (MQW)
structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. These
devices are designed for application up to 1.25 Gb/s.
APPLICATIONS
• STM-1 (L-1.1), STM-4 (S-4.1), ITU-T recommendations
• FTTH (Fiber To The Home) system
FEATURES
• Optical output power
• Low threshold current
• Differential Efficiency
• InGaAs monitor PIN-PD
• CAN package
• Focal point
P
o
= 5.0 mW
l
th
= 6 mA
η
d
= 0.45 W/A
• Wide operating temperature range T
C
=
−40
to +85°C
φ
5.6 mm
6.35 mm
Document No. PL10528EJ02V0DS (2nd edition)
Date Published July 2006 NS CP(K)
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.

NX5312EK-AZ Related Products

NX5312EK-AZ NX5312_06 NX5312EH-AZ NX5312
Description 1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, InGaAsP MQW-FP LASER DIODE 1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, InGaAsP MQW-FP LASER DIODE 1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, InGaAsP MQW-FP LASER DIODE 1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, InGaAsP MQW-FP LASER DIODE

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