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NX7303CA-CC

Description
1310 nm InGaAsP MQW FP LASER DIODE IN COAXIAL PACKAGE FOR 155 Mb/s APPLICATION
File Size95KB,4 Pages
ManufacturerCEL
Websitehttp://www.cel.com/
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NX7303CA-CC Overview

1310 nm InGaAsP MQW FP LASER DIODE IN COAXIAL PACKAGE FOR 155 Mb/s APPLICATION

NEC's 1310 nm
InGaAsP MQW FP LASER DIODE
NX7303BA-CC
IN COAXIAL PACKAGE
NX7303CA-CC
FOR 155 Mb/s APPLICATION
FEATURES
CENTER WAVELENGTH:
λ
C
= 1310 nm
OPTICAL OUTPUT POWER:
P
f
= 1.0 mW
LOW THRESHOLD CURRENT:
I
TH
= 9 mA
• HIGH CUTOFF FREQUENCY:
f
C
= 2.0 GHz
InGaAs MONITOR PIN-PD
• WITH SC-UPC CONNECTOR
WIDE OPERATING TEMPERATURE RANGE:
-40 to +85°C
BASED ON TELCORDIA RELIABILITY
DESCRIPTION
NEC's NX7303BA-CC and NX7303CA-CC are 1310 nm Fabry-
Perot (FP) laser diode coaxial modules with single mode fiber.
They have a Multiple Quantum Well (MQW) structure and a
built-in InGaAs monitor photo diode. These modules are ideal
as a light source for Synchronous Digital Hierarchy (SDH)
systems, STM-1 and long-haul L-1.1 ITU-T recommendations.
ELECTRO-OPTICAL CHARACTERISTICS
(T
C
= -40 to +85°C, unless otherwise specified)
PART NUMBER
SYMBOLS
P
f
V
OP
I
TH
P
TH
I
MOD
η
d
η
d
PARAMETERS AND CONDITIONS
Optical Output Power from Fiber
Operating Voltage, P
f
= 1.0 mW
Threshold Current
Threshold Output Power, I
F
= I
TH
Modulation Current
Differential Efficiency
P
f
= 1.0 mW, T
C
= 25°C
P
f
= 1.0 mW
T
C
= +25°C
UNITS
mW
V
mA
mA
µW
mA
mA
W/A
W/A
dB
4
2
8
5
0.030
0.018
-3
MIN
NX7303BA-CC, NX7303CA-CC
TYP
1.0
1.2
9
1.5
20
50
75
35
60
0.100
0.150
MAX
15
0.070
-2
P
f
= 1.0 mW, T
C
= 25°C
P
f
= 1.0 mW
Temperature Dependence of Differential Efficiency,
η
d
= 10 log
η
d
(@ T
C
°C)
η
d
(@ 25 °C)
%
nm
nm/°C
nm
GHz
ns
ns
µA
nA
nA
pF
%
dB
0.5
100
1263
1310
0.4
1.3
2.0
0.2
0.3
700
0.1
10
0.5
0.5
1200
50
500
20
±10
1.0
±20
1360
0.5
4.0
Kink
λc
∆λ/∆T
σ
f
C
t
r
t
f
I
m
I
D
C
t
LIN
m
γ
Kink, P
f
= Up to 1.2 mW (Refer to Definitions)
Center Wavelength, P
f
= 1.0 mW, RMS (-20 dB)
Temperature Dependence of Center Wavelength
Spectral Width, P
f
= 1.0 mW, RMS (-20 dB)
Cut-off Frequency, -3 dB
Rise Time, 10 to 90%, P
pk
= 1.0 mW, I
F
= I
TH
Fall Time, 90 to 10%, P
pk
= 1.0 mW, I
F
= I
TH
Monitor Current, V
R
= 5 V, P
f
= 1.0 mW
Dark Current
V
R
= 5 V, T
C
= 25
°C
V
R
= 5 V
Applicable to Monitor PD: T
C
= -40 to +85
°C
unless otherwise specified
Terminal Capacitance, V
R
= 5 V, f = 1 MHz
Linearity, V
R
= 5 V, P
f
= 0.1 to 1.0 mW
(Refer to Definitions)
Tracking Error, Im = const. (Refer to Definitions)
California Eastern Laboratories

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Description 1310 nm InGaAsP MQW FP LASER DIODE IN COAXIAL PACKAGE FOR 155 Mb/s APPLICATION 1310 nm InGaAsP MQW FP LASER DIODE IN COAXIAL PACKAGE FOR 155 Mb/s APPLICATION
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