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8N60G-B-TF1-T

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size212KB,8 Pages
ManufacturerUNISONIC TECHNOLOGIES CO.,LTD
Websitehttp://www.unisonic.com.tw/
Download Datasheet Parametric View All

8N60G-B-TF1-T Overview

Transistor

8N60G-B-TF1-T Parametric

Parameter NameAttribute value
MakerUNISONIC TECHNOLOGIES CO.,LTD
Reach Compliance Codecompliant
Base Number Matches1
UNISONIC TECHNOLOGIES CO., LTD
8N60
7.5 Amps, 600/650 Volts
N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC
8N60
is a high voltage and high current power
MOSFET, designed to have better characteristics, such as fast
switching time, low gate charge, low on-state resistance and have
a high rugged avalanche characteristics. This power MOSFET is
usually used at high speed switching applications in power
supplies, PWM motor controls, high efficient DC to DC converters
and bridge circuits.
Power MOSFET
FEATURES
* R
DS(ON)
= 1.2Ω@V
GS
= 10 V
* Ultra low gate charge ( typical 28 nC )
* Low reverse transfer capacitance ( C
RSS
= typical 12.0 pF )
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
8N60L-x-TA3-T
8N60G-x-TA3-T
8N60L-x-TF1-T
8N60G-x-TF1-T
8N60L-x-TF3-T
8N60G-x-TF3-T
8N60L-x-T2Q-T
8N60G-x-T2Q-T
Note: Pin Assignment: G: Gate D: Drain S: Source
8N60L-x-TA3-T
(1)Packing Type
(2)Package Type
(3)Drain-Source Voltage
(4)Lead Plating
Package
TO-220
TO-220F1
TO-220F
TO-262
(1) T: Tube
(2) TA3: TO-220, TF1: TO220-F1, TF3: TO-220F
(2)
T2Q: TO-262
(3) A: 600V, B: 650V
(4) G: Halogen Free, L: Lead Free
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
Tube
www.unisonic.com.tw
Copyright © 2009 Unisonic Technologies Co., Ltd
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