KSC2881 NPN Epitaxial Silicon Transistor
July 2005
KSC2881
NPN Epitaxial Silicon Transistor
Power Amplifier
• Collector-Emitter Voltage : V
CEO
=120V
• Current Gain Bandwidth Productor : f
T
=120MHz
• Collector Dissipation : P
C
=1~2W in Mounted on Ceramic Board
• Complement to KSA1201
Marking
2 8
P Y
1
8 1
W W
Weekly code
Year code
h
FE
grage
SOT-89
1. Base 2. Collector 3. Emitter
Absolute Maximum Ratings
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
P
C
*
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
T
a
= 25°C unless otherwise noted
Parameter
Value
120
120
5
800
160
500
1,000
150
-55 ~ 150
Units
V
V
V
mA
mA
mW
mW
°C
°C
Collector Power Dissipation
Junction Temperature
Storage Temperature
* Mounted on Ceramic Board (250mm
2
x 0.8mm)
Electrical Characteristics
T
Symbol
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE
(sat)
V
BE
(on)
f
T
C
ob
a
=
25°C unless otherwise noted
Parameter
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
Test Condition
I
C
= 10µA, I
B
= 0
I
E
= 1mA, I
C
= 0
V
CB
= 120V, I
E
= 0
V
BE
= 5V, I
C
= 0
V
CE
= 5V, I
C
= 100mA
I
C
= 500mA, I
B
= 50mA
V
CE
= 5V, I
C
= 500mA
V
CE
= 5V, I
C
= 100mA
V
CB
= 10V, I
E
= 0, f = 1MHz
Min.
120
5
Typ.
Max.
Units
V
V
100
100
80
240
1.0
1.0
120
30
nA
nA
V
V
MHz
pF
©2005 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
KSC2881 Rev. B2
KSC2881 NPN Epitaxial Silicon Transistor
Typical Performance Characteristics
Figure 1. Static Characteristic
0.8
Figure 2. Base-Emitter On Voltage
1.0
I
B
= 50mA
I
B
= 20mA
V
CE
= 5V
I
C
[mA], COLLECTOR CURRENT
I
C
[mA], COLLECTOR CURRENT
I
B
= 10mA
0.6
I
B
= 5mA
0.8
0.6
0.4
I
B
= 3mA
0.4
I
B
= 2mA
0.2
I
B
= 1mA
0.2
0.0
0
4
8
12
16
0.0
0.0
0.2
0.4
0.6
0.8
1.0
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
V
BE
[mV], SATURATION VOLTAGE
Figure 3. DC Current Gain
Figure 4. Collector-Emitter Saturation Voltage
1
1000
V
CE
(sat) [V], SATURATION VOLTAGE
V
CE
= 5 V
I
C
= 10 I
B
h
FE
, DC CURRENT GAIN
100
0.1
10
0.01
1
10
100
1000
1
10
100
1000
I
C
[mA], COLLECTOR CURRENT
I
C
[mA], COLLECTOR CURRENT
Figure 5. Power Derating
1.6
Figure 6. Safe Operating Area
10000
1.2
Mounted on Ceramic Board (250 mm x 0.8 mm)
2
I
C
[mA], COLLECTOR CURRENT
P
C
[W], POWER DISSIPATION
I
C
MAX. (Pulse)
1000
Ta = 25 C
Single Pulse
10 ms
1 ms
o
I
C
MAX. (DC)
100 ms
100
0.8
0.4
10
0.0
0
50
o
100
150
200
1
0.1
1
10
100
1000
Ta [ C], AMBIENT TEMPERATURE
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
KSC2881 Rev. B2
3
www.fairchildsemi.com
KSC2881 NPN Epitaxial Silicon Transistor
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DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which,
(a) are intended for surgical implant into the body, or (b) support
or sustain life, or (c) whose failure to perform when properly used
in accordance with instructions for use provided in the labeling,
can be reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life support device
or system whose failure to perform can be reasonably expected
to cause the failure of the life support device or system, or to
affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I16
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
5
KSC2881 Rev. B2
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