KSC5030F High Voltage Fast Switching Transistor
KSC5030F
High Voltage Fast Switching Transistor
Features
• Fast Speed Switching
• Wide Safe Operating Area
1
TO-3PF
2.Collector
3.Emitter
1.Base
Absolute Maximum Ratings
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
J
T
STG
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
* Collector Current (Pulse)
Collector Dissipation (T
C
= 25°C)
Junction Temperature
Storage Temperature
Value
1100
800
7
6
20
60
150
-55 ~ 150
Units
V
V
V
A
A
W
°C
°C
* Pulse Test: PW = 300µs, Duty Cycle = 2% Pulsed
Package Marking and Ordering Information
Device Marking
KSC5030F
Device
KSC5030FRTU
Package
TO3PF
Reel Size
-
Tape Width
-
Quantity
50
©2005 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
KSC5030F Rev. A
KSC5030F High Voltage Fast Switching Transistor
Electrical Characteristics
Symbol
BV
CBO
BV
CEO
BV
EBO
V
CEX
(sus)
I
CBO
I
EBO
h
FE1
h
FE2
V
CE(sat)
V
BE(sat)
C
OB
t
ON
t
STG
t
F
T
C
= 25°C unless otherwise noted
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Sustaining Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Output Capacitance
Turn On Time
Storage Time
Fall Time
Conditions
I
C
= 1mA, I
E
= 0
I
C
= 5mA, I
B
= 0
I
E
= 1mA, I
C
= 0
I
C
= 3A, I
B1
= - I
B2
= 0.6A
L=1mH, Clamped
V
CB
= 800V, I
E
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 5V, I
C
= 0.6A
V
CE
= 5V, I
C
= 2.0A
I
C
= 3A, I
B
= 0.6A
I
C
= 3A, I
B
= 0.6A
V
CB
= 10V, I
E
= 0, f = 1MHz
V
CC
=400V, I
C
=4A
I
B1
=0.8A, I
B2
=-1.6A
R
L
=100Ω
Min.
1100
800
7
800
Typ.
Max
Units
V
V
V
V
10
10
10
8
40
2.0
1.5
120
0.5
3.0
0.3
µA
µA
V
V
pF
µs
µs
µs
h
FE
Classification
Classification
h
FE1
R
10 ~ 20
O
15 ~ 30
Y
20 ~ 40
KSC5030F Rev. A
2
www.fairchildsemi.com
KSC5030F High Voltage Fast Switching Transistor
Typical Performance Characteristics
Figure 1. Static Characterstic
10
9
Figure 2. DC Current Gain
1000
V
CE
= 5V
I
C
[A], COLLECTOR CURRENT
8
7
6
5
4
3
2
1
0
h
FE
, DC CURRENT GAIN
10
100
I
B
= 800mA
I
B
= 700mA
I
B
= 600mA
I
B
= 500mA
I
B
= 400mA
I
B
= 300mA
I
B
= 200mA
I
B
= 150mA
I
B
= 100mA
I
B
= 50mA
I
B
= 20mA I = 0
B
0
1
2
3
4
5
6
7
8
9
10
1
0.01
0.1
1
10
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
I
C
[A], COLLECTOR CURRENT
Figure 3. Collector-Emitter Saturation Voltage
V
BE
(sat), V
CE
(sat)[V], SATURATION VOLTAGE
10
Figure 4. Base-Emitter On Voltage
10
I
C
= 5 I
B
9
V
CE
= 5V
I
C
[A], COLLECTOR CURRENT
1
10
8
7
6
5
4
3
2
1
1
V
BE
(sat)
0.1
V
CE
(sat)
0.01
0.01
0.1
0
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
I
C
[A], COLLECTOR CURRENT
V
BE
[V], BASE-EMITTER VOLTAGE
Figure 5. Switching Time
10
Figure 6. Forward Biased Safe Operating Area
100
t
STG
I
C
(max).(Pulse)
I
C
[A], COLLECTOR CURRENT
s
0
µ
10
t
ON
, t
STG
, t
F
[
µ
s], TIME
10
I
C
(max)
DC
ms
10
s
1m
1
t
ON
1
t
F
0.1
0.1
0.01
0.1
1
10
0.01
1
10
100
1000
I
C
[A], COLLECTOR CURRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
KSC5030F Rev. A
3
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KSC5030F High Voltage Fast Switching Transistor
Typical Performance Characteristics
(Continued)
Figure 7. Reverse Biased Safe Operating Area
100
Figure 8. Power Derating Curve
80
L=200uH
I
B
2 = -0.6A
70
I
C
[A], COLLECTOR CURRENT
P
C
[W], POWER DISSIPATION
10
60
50
40
30
20
10
1
0.1
0.01
10
100
1000
10000
0
0
25
50
o
75
100
125
150
175
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
T
C
[ C], CASE TEMPERATURE
KSC5030F Rev. A
4
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KSC5030F High Voltage Fast Switching Transistor
Mechanical Dimensions
TO-3PF
5.50
±0.20
4.50
±0.20
15.50
±0.20
ø3.60
±0.20
3.00
±0.20
(1.50)
10.00
±0.20
10
°
26.50
±0.20
23.00
±0.20
16.50
±0.20
14.50
±0.20
0.85
±0.03
16.50
±0.20
2.00
±0.20
14.80
±0.20
2.00
±0.20
2.00
±0.20
4.00
±0.20
0.75
–0.10
+0.20
2.00
±0.20
2.50
±0.20
2.00
±0.20
3.30
±0.20
5.45TYP
[5.45
±0.30
]
5.45TYP
[5.45
±0.30
]
0.90
–0.10
+0.20
3.30
±0.20
2.00
±0.20
5.50
±0.20
1.50
±0.20
22.00
±0.20
Dimensions in Millimeters
KSC5030F Rev. A
5
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