ASG402
DC-3000 MHz
SiGe HBT Amplifier
Features
·SiGe
Technology
·16
dB Gain at 900 MHz
·+29
dBm P1dB
·+45
dBm Output IP3
·3.3
dB Noise Figure
·ACPR=
-50dBc@21dBm
·ACLR=
-45dBc@21dBm
·Single
+8 V Supply
·SOT-89
Surface Mount Package
Description
The ASG402 is designed for high linearity, high
gain, and low noise over a wide range of fre-
quency, being suitable for use in both receiver
and transmitter of wireless and wireline telecom-
munication systems. The product is manufactured
using a state-of-the-art SiGe HBT process of the
company's own, making it cost-effective and
highly reliable. The amplifiers are available in
a low cost SOT-89 package completing stringent
DC and RF tests.
Package Style: SOT-89
Specifications
1)
Parameters
Frequency Range
Gain
Input VSWR
Output VSWR
Output IP3
2)
Units
MHz
dB
-
-
dBm
dB
dBm
mA
V
4)
Min.
Typ.
250 - 2500
16
1.44
1.44
Max.
Applications
·CDMA,
GSM, W-CDMA, PCS
·Power
Amplifier
·Gain
Block
·CATV
Amplifier
·IF
Amplifier
44
45
3.3
29
Noise Figure
Output P1dB
Supply Current
Supply Voltage
Thermal Resistance, R
th
260
275
8
24.1
290
°C/W
1) Measurement conditions are as follows: T = 25°C, Vs = 6 V, Freq. = 900 MHz, 50 ohm system.
2) S11 & S22 can be improved, at a specific frequency, by moving an input shunt capacitor (C2) along an input transmission line.
3) OIP3 is measured with two tones at an output power of +14 dBm/tone separated by 1 MHz.
4) The thermal resistance was determined at a DC power of 1.65 W (V
CC
=6 V, I
C
=275 mA) with RF signal and a lead temperature
of 50.8
°C.
Absolute Maximum Ratings
Parameters
Operating device voltage
RF input power (continuous)
Supply current
Operating case temperature
Storage temperature
Rating
7V
+2 dB above Input P1dB
300 mA
-40 to
+
85°C
-40 to
+
150°C
Remarks
More Information
Website: www.asb.co.kr
E-mail: sales@asb.co.kr
Tel: (82) 42-528-7220
Fax: (82) 42-528-7222
ASB Inc., 4th Fl. Venture Town
Bldg., 367-17 Goijeong-Dong,
Seo-Gu, Daejon 302-716, Korea
Application Note
Application circuit for 900 MHz
Application circuit for 2 GHz
Ordering Information
Part Number
ASG402
EB-ASG402-900
EB-ASG402-2000
1/7
Description
High linearity medium power amplifier
(Available in tape and reel)
Fully assembled evaluation kit (900 MHz)
Fully assembled evaluation kit (2000 MHz)
www.ASB.co.kr
Mar.. 2004
ASG402
Outline Drawing
(Unit: mm)
3
a
2
2
1
Pin Description
Function
Input
Ground
Output
Pin No.
1
2
3
Land Pattern
Mounting Configuration
(Unit: mm)
Note: 1. The number and size of ground via holes in a circuit board is critical for thermal
and RF grounding considerations.
2. We recommend that the ground via holes be placed on the bottom of lead pin 2
for better RF and thermal performance, as shown in the drawing at the left side.
2/7
www.ASB.co.kr
Mar.. 2004
ASG402
Application Circuit: 900 MHz
Typical Performance
Frequency
Magnitude S21
Magnitude S11
Magnitude S22
Output P1dB
Output IP3
2)
1)
1)
Schematic
900 MHz
16 dB
-15 dB
-15 dB
29 dBm
45 dBm
3.3 dB
6V
275 mA
8V
C1=10 pF
RF IN
R3=300
Ω
R1=7.5
Ω
Vs= 8V
R2=1.2 kΩ
L2=10 nH
C6=
C7=
100 pF 1000 pF
C8=
1
µF
C5=1
µF
L1=470 nH
C3=100 pF
Noise Figure
Device Operating Voltage
Current
Supply Voltage
50
Ω
4.5 mm
C2= 8 pF
ASG402
50
Ω
9 mm
RF OUT
L3=33 nH
C4=4.7 pF
1) S11 & S22 can be improved, at a specific frequency, by moving
an input shunt capacitor (C2) along an input transmission line.
2) OIP3 is measured with two tones at an output power of +14 dBm/tone
separated by 1 MHz.
Gain vs. Temperature
20
19
18
Board Layout (FR4, 40x40 mm
2
, 0.8T)
Gain ( dB )
17
16
15
14
13
12
-60
Frequency = 900MHz
-40
-20
0
20
o
40
60
80
100
Temperature ( C )
S-parameters
0
-15
-5
S11 ( dB )
-15
S12 ( dB )
-10
+ 85 C
o
+ 25 C
o
- 40 C
o
-20
+ 85 C
o
+ 25 C
o
- 40 C
o
-25
-30
-20
-35
-25
600
700
800
900
1000
1100
1200
-40
600
700
800
900
1000
1100
1200
Frequency ( MHz )
3/7
Frequency ( MHz )
www.ASB.co.kr
Mar.. 2004
ASG402
Application Circuit: 2000 MHz
Typical Performance
Frequency
Magnitude S21
Magnitude S11
Magnitude S22
Output P1dB
Output IP3
2)
1)
1)
Schematic
2000 MHz
9 dB
-15dB
-14 dB
28 dBm
44 dBm
5.0 dB
6V
275 mA
8V
RF IN
L3=33 nH
L1= 100 nH
C1= 1.0 pF
C3=100 pF
R2=1.2 kΩ
R3=300
Ω
L2= 6.8 nH
C5=1
µF
Vs=8 V
R1=7.5
Ω
C6=
C7=
C8=
100 pF 1000 pF 1
µF
Noise Figure
Device Operating Voltage
Current
Supply Voltage
50
Ω
4.5 mm
C2=1.8 pF
ASG402
50
Ω
4.5 mm
RF OUT
C4=2.2 pF
1) S11 & S22 can be improved, at a specific frequency, by moving
an input shunt capacitor (C2) along an input transmission line.
2) OIP3 is measured with two tones at an output power of +14 dBm/tone
separated by 1 MHz.
Gain vs. Temperature
13
12
Board Layout (FR4, 40x40 mm
2
, 0.8T)
Frequency = 2GHz
11
Gain ( dB )
10
9
8
7
6
5
-60
-40
-20
0
20
o
40
60
80
100
Temperature ( C )
S-parameters
0
-5
-10
-10
+ 85 C
o
+ 25 C
o
- 40 C
o
S11 ( dB )
-30
+ 85 C
o
+ 25 C
o
- 40 C
o
S12 ( dB )
2300
-20
-15
-20
-40
-25
-50
1700
1800
1900
2000
2100
2200
-30
1700
1800
1900
2000
2100
2200
2300
Frequency ( MHz )
Frequency ( MHz )
5/7
www.ASB.co.kr
Mar.. 2004
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