PD- 95140
IRFPS35N50LPbF
SMPS MOSFET
Applications
•
Zero Voltage Switching SMPS
•
Telecom and Server Power Supplies
•
Uninterruptible Power Supplies
•
Motor Control applications
•
Lead-Free
HEXFET
®
Power MOSFET
V
DSS
R
DS(on)
typ.
Trr
typ.
I
D
500V
0.125Ω
170ns
34A
Features and Benefits
•
SuperFast body diode eliminates the need for external
diodes in ZVS applications.
•
Lower Gate charge results in simpler drive requirements.
•
Enhanced dv/dt capabilities offer improved ruggedness.
•
Higher Gate voltage threshold offers improved noise immunity
.
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V
I
DM
Pulsed Drain Current
P
D
@T
C
= 25°C Power Dissipation
V
GS
dv/dt
T
J
T
STG
Super-247™
Max.
34
22
140
450
3.6
±30
15
-55 to + 150
300 (1.6mm from case )
1.1(10)
Units
A
W
W/°C
V
V/ns
°C
N•m (lbf•in)
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
e
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Diode Characteristics
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
I
RRM
t
on
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
170
220
670
8.5
34
A
140
1.5
250
330
1010
–––
nC
A
V
ns
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 34A, V
GS
= 0V
T
J
= 25°C, I
F
= 34A
J
J
Ã
c
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Forward Turn-On Time
f
1500 2200
f
T = 25°C, I = 34A, V = 0V
f
T = 125°C, di/dt = 100A/µs
f
T
J
= 125°C, di/dt = 100A/µs
S
GS
T
J
= 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
09/14/04
IRFPS35N50LPbF
Static @ T
J
= 25°C (unless otherwise specified)
Symbol
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
R
DS(on)
V
GS(th)
I
DSS
I
GSS
R
G
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
Min. Typ. Max. Units
500
–––
–––
3.0
–––
–––
–––
–––
–––
–––
0.12
–––
–––
–––
–––
–––
1.1
–––
–––
5.0
50
2.0
100
-100
–––
Ω
V
Ω
V
µA
mA
nA
Conditions
V
GS
= 0V, I
D
= 250µA
V
GS
= 10V, I
D
= 20A
V/°C Reference to 25°C, I
D
= 1mA
0.125 0.145
f
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 500V, V
GS
= 0V
V
DS
= 400V, V
GS
= 0V, T
J
= 125°C
V
GS
= 30V
V
GS
= -30V
f = 1MHz, open drain
Dynamic @ T
J
= 25°C (unless otherwise specified)
Symbol
gfs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
C
oss
eff. (ER)
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Effective Output Capacitance
(Energy Related)
Min. Typ. Max. Units
18
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
24
100
42
42
5580
590
58
7290
160
320
220
–––
230
65
110
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
pF
ns
nC
S
I
D
= 34A
Conditions
V
DS
= 50V, I
D
= 20A
V
DS
= 400V
V
GS
= 10V, See Fig. 7 & 15
V
DD
= 250V
I
D
= 34A
R
G
= 1.2Ω
V
GS
= 10V, See Fig. 10a & 10b
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz, See Fig. 5
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 400V, ƒ = 1.0MHz
V
GS
= 0V,V
DS
= 0V to 400V
f
f
g
Avalanche Characteristics
Symbol
E
AS
I
AR
E
AR
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Ã
d
Typ.
–––
–––
–––
Max.
560
34
45
Units
mJ
A
mJ
Repetitive Avalanche Energy
Thermal Resistance
Symbol
R
θJC
R
θCS
R
θJA
Parameter
Junction-to-Case
h
Typ.
–––
0.24
–––
Max.
0.28
–––
40
Units
°C/W
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
h
Repetitive rating; pulse width limited by
max. junction temperature. (See Fig. 11)
Notes:
Pulse width
≤
400µs; duty cycle
≤
2%.
C
oss
eff. is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS.
C
oss
eff.(ER) is a fixed capacitance that stores the same energy
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
Starting T
J
= 25°C, L = 0.97mH, R
G
=25Ω,
I
SD
≤
34A, di/dt
≤
765A/µs, V
DD
≤
V
(BR)DSS
,
T
J
≤
150°C.
I
AS
= 34A (See Figure 13)
R
θ
is measured at T
J
approximately 90°C
2
www.irf.com
IRFPS35N50LPbF
1000
1000
ID, Drain-to-Source Current (A)
100
I
D
, Drain-to-Source Current (A)
10
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
100
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
1
10
0.1
4.5V
0.01
1
4.5V
0.001
0.1
1
20µs PULSE WIDTH
Tj = 25°C
10
100
0.1
0.1
20µs PULSE WIDTH
T
J
= 150
°
C
1
10
100
VDS, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
3.0
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= 34A
I
D
, Drain-to-Source Current (A)
100
2.5
T
J
= 150
°
C
10
2.0
1.5
1
1.0
0.1
T
J
= 25
°
C
V DS = 50V
20µs PULSE WIDTH
5.0
6.0
7.0
8.0
9.0
10.0
0.5
0.01
4.0
0.0
-60 -40 -20
V
GS
= 10V
0
20
40
60
80 100 120 140 160
V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
www.irf.com
3
IRFPS35N50LPbF
100000
30
VGS = 0V,
f = 1 MHZ
Ciss = C + Cgd, C
gs
ds SHORTED
Crss = C
gd
Coss = C + Cgd
ds
25
10000
C, Capacitance(pF)
Ciss
Energy (µJ)
100
1000
20
15
1000
Coss
100
10
Crss
5
10
1
10
0
0
100
200
300
400
500
600
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typ. Output Capacitance
Stored Energy vs. V
DS
20
I
D
= 34A
V
DS
= 400V
V
DS
= 250V
V
DS
= 100V
1000
V
GS
, Gate-to-Source Voltage (V)
16
I
SD
, Reverse Drain Current (A)
100
T
J
= 150
°
C
10
12
8
1
T
J
= 25
°
C
4
0
0
40
80
120
FOR TEST CIRCUIT
SEE FIGURE 13
160
200
240
0.1
0.2
V
GS
= 0 V
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Q
G
, Total Gate Charge (nC)
V
SD
,Source-to-Drain Voltage (V)
Fig 7.
Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 8.
Typical Source-Drain Diode
Forward Voltage
4
www.irf.com
IRFPS35N50LPbF
35
30
V
DS
V
GS
R
G
R
D
D.U.T.
+
I
D
, Drain Current (A)
25
20
15
10
5
0
25
50
75
100
125
150
-
V
DD
V
GS
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
Fig 10a.
Switching Time Test Circuit
V
DS
90%
T
C
, Case Temperature ( ° C)
10%
V
GS
Fig 9.
Maximum Drain Current Vs.
Case Temperature
t
d(on)
t
r
t
d(off)
t
f
Fig 10b.
Switching Time Waveforms
1
Thermal Response (Z
thJC
)
D = 0.50
0.1
0.20
0.10
0.05
0.02
0.01
P
DM
SINGLE PULSE
(THERMAL RESPONSE)
t
1
t
2
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.0001
0.001
0.01
0.1
0.01
0.001
0.00001
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5
京公网安备 11010802033920号
EEWORLD
