IRFu5505PBF datasheet, PDF - EEWORLD Datasheet

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IRFu5505PBF: Description18 A, 55 V, 0.11 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251AA; CategoryDiscrete semiconductor The transistor; File Size1MB，10 Pages; ManufacturerInternational Rectifier （ Infineon ）; Websitehttp://www.irf.com/; Environmental Compliance

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IRFu5505PBF Overview

18 A, 55 V, 0.11 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251AA

IRFu5505PBF Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	International Rectifier （ Infineon ）
Parts packaging code	TO-251AA
package instruction	HALOGEN AND LEAD FREE, PLASTIC, IPAK-3
Contacts	3
Reach Compliance Code	not_compliant
ECCN code	EAR99
Other features	AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Avalanche Energy Efficiency Rating (Eas)	150 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	55 V
Maximum drain current (Abs) (ID)	18 A
Maximum drain current (ID)	18 A
Maximum drain-source on-resistance	0.11 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-251AA
JESD-30 code	R-PSIP-T3
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	P-CHANNEL
Maximum power dissipation(Abs)	57 W
Maximum pulsed drain current (IDM)	64 A
Certification status	Not Qualified
surface mount	NO
Terminal surface	Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	30
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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PD - 95077A

IRFR5505PbF

IRFU5505PbF

•

Lead-Free

www.irf.com

1

1/10/05

IRFu5505PBF Related Products

	IRFu5505PBF	IRFR5505PBF
Description	18 A, 55 V, 0.11 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251AA	18 A, 55 V, 0.11 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA
Is it lead-free?	Lead free	Lead free
Is it Rohs certified?	conform to	conform to
Maker	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）
Parts packaging code	TO-251AA	TO-252AA
package instruction	HALOGEN AND LEAD FREE, PLASTIC, IPAK-3	HALOGEN AND LEAD FREE, PLASTIC, DPAK-2/3
Contacts	3	3
Reach Compliance Code	not_compliant	_compli
ECCN code	EAR99	EAR99
Other features	AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE	AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Avalanche Energy Efficiency Rating (Eas)	150 mJ	150 mJ
Shell connection	DRAIN	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	55 V	55 V
Maximum drain current (Abs) (ID)	18 A	18 A
Maximum drain current (ID)	18 A	18 A
Maximum drain-source on-resistance	0.11 Ω	0.11 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-251AA	TO-252AA
JESD-30 code	R-PSIP-T3	R-PSSO-G2
JESD-609 code	e3	e3
Humidity sensitivity level	1	1
Number of components	1	1
Number of terminals	3	2
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260	260
Polarity/channel type	P-CHANNEL	P-CHANNEL
Maximum power dissipation(Abs)	57 W	57 W
Maximum pulsed drain current (IDM)	64 A	64 A
Certification status	Not Qualified	Not Qualified
surface mount	NO	YES
Terminal surface	Matte Tin (Sn) - with Nickel (Ni) barrier	Matte Tin (Sn) - with Nickel (Ni) barrie
Terminal form	THROUGH-HOLE	GULL WING
Terminal location	SINGLE	SINGLE
Maximum time at peak reflow temperature	30	30
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON

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