Advanced Process Technology
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Surface Mount (IRFZ46NS)
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Low-profile through-hole (IRFZ46NL)
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175°C Operating Temperature
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Fast Switching
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Fully Avalanche Rated
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Lead-Free
Description
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IRFZ46NSPbF
IRFZ46NLPbF
HEXFET
®
Power MOSFET
D
PD - 95158
V
DSS
= 55V
R
DS(on)
= 0.0165Ω
G
Advanced HEXFET
®
Power MOSFETs from International
I
D
= 53A
S
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well known
for, provides the designer with an extremely efficient and
reliable device for use in a wide variety of applications.
The D
2
Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the highest
power capability and the lowest possible on-resistance in
any existing surface mount package. The D
2
Pak is suitable
for high current applications because of its low internal
connection resistance and can dissipate up to 2.0W in a
typical surface mount application.
The through-hole version (IRFZ46NL) is available for low-
profile applications.
D 2 P ak
T O -26 2
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
C
= 25°C
V
GS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
53
37
180
3.8
107
0.71
± 20
28
11
5.0
-55 to + 175
300 (1.6mm from case )
Units
A
W
W
W/°C
V
A
mJ
V/ns
°C
Thermal Resistance
Parameter
R
θJC
R
θJA
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
Typ.
–––
–––
Max.
1.4
40
Units
°C/W
www.irf.com
1
04/22/04
IRFZ46NS/LPbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
g
fs
Forward Transconductance
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
S
C
iss
C
oss
C
rss
E
AS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Single Pulse Avalanche Energy
Min.
55
–––
–––
2.0
19
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Max. Units
Conditions
–––
V
V
GS
= 0V, I
D
= 250µA
––– V/°C Reference to 25°C, I
D
=1mA
.0165
Ω
V
GS
=10V, I
D
= 28A
4.0
V
V
DS
= V
GS
, I
D
= 250µA
–––
S
V
DS
= 25V, I
D
= 28A
25
V
DS
= 55V, V
GS
= 0V
µA
250
V
DS
= 44V, V
GS
= 0V, T
J
= 150°C
100
V
GS
= 20V
nA
-100
V
GS
= -20V
72
I
D
= 28A
11
nC
V
DS
= 44V
26
V
GS
= 10V, See Fig. 6 and 13
–––
V
DD
= 28V
–––
I
D
= 28A
ns
–––
R
G
= 12Ω
–––
R
D
= 0.98Ω, See Fig. 10
Between lead,
nH
7.5 –––
and center of die contact
1696 –––
V
GS
= 0V
407 –––
pF
V
DS
= 25V
110 –––
ƒ = 1.0MHz, See Fig. 5
583
152
I
AS
= 28A, L = 389mH
Typ.
–––
0.057
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
14
76
52
57
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
––– –––
53
showing the
A
G
integral reverse
––– ––– 180
p-n junction diode.
S
––– ––– 1.3
V
T
J
= 25°C, I
S
= 28A, V
GS
= 0V
––– 67 101
ns
T
J
= 25°C, I
F
= 28A
––– 208 312
nC
di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting T
J
= 25°C, L = 389µH
T
J
≤
175°C.
R
G
= 25Ω, I
AS
= 28A. (See Figure 12)
Pulse width
≤
400µs; duty cycle
≤
2%.
Uses IRFZ46N data and test conditions.
This is a typical value at device destruction and represents
operation outside rated limits.
I
SD
≤
28A, di/dt
≤
220A/µs, V
DD
≤
V
(BR)DSS
,
This is a calculated value limited to TJ = 175°C.
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 39A.
** When mounted on 1" square PCB (FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
2
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IRFZ46NS/LPbF
1000
TO P
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
1000
I , D rain-to-S ou rc e C urre nt (A )
D
BO TTOM
I , D rain-to-S ource C urrent (A )
D
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
100
100
10
10
4.5 V
4.5 V
1
0.1
1
2 0µ s P U L S E W ID T H
T
J
25 °C
T
C
= 25°C
10
100
A
1
0.1
1
2 0µ s P U L S E W ID T H
T
J
17 5°C
T
C
= 175°C
10
100
A
V D S , D rain-to-S ource V oltage (V )
V DS , D rain-to-S ource V oltage (V )
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
2.5
R
D S (on)
, Drain-to-S ource O n Resistance
(N orm alized)
I
D
= 4 6A
I
D
, D rain-to-So urce C urren t (A )
2.0
100
T
J
= 2 5°C
T
J
= 1 7 5°C
1.5
1.0
10
0.5
1
4
5
6
7
V
DS
= 2 5V
2 0µ s P U L S E W ID TH
8
9
10
A
0.0
-60
-40
-20
0
20
40
60
80
V
G S
= 10 V
100 120 140 160 180
A
V
G S
, G ate-to -So urce Voltag e (V)
T
J
, Junction T em perature (°C )
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
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3
IRFZ46NS/LPbF
2800
2400
C , Capacitance (pF)
2000
C
iss
1600
C
oss
1200
V
G S
, G ate-to-S ource V oltage (V )
V
GS
C
iss
C
rs s
C
o ss
=
=
=
=
0V ,
f = 1MHz
C
g s
+ C
g d
, C
d s
S H O R TE D
C
gd
C
ds
+ C
g d
20
I
D
= 28 A
V
D S
= 44 V
V
D S
= 28 V
16
12
8
800
C
rss
400
4
0
1
10
100
A
0
0
10
20
30
FO R TE S T C IR C U IT
S E E FIG U R E 1 3
40
50
60
A
V
D S
, D rain-to-S ourc e V oltage (V )
Q
G
, T otal G ate C harge (nC )
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
I
SD
, Reverse D rain C urrent (A)
O P E R A T IO N IN T H IS A R E A L IM ITE D
B Y R
D S (o n)
I
D
, D rain Current (A )
100
100
10µs
T
J
= 1 75 °C
T
J
= 25 °C
10
100µs
10
1m s
1
0.4
0.8
1.2
1.6
V
G S
= 0V
2.0
A
2.4
1
1
T
C
= 25 °C
T
J
= 17 5°C
S ing le P u lse
10
10m s
100
A
V
S D
, S ourc e-to-D rain V oltage (V )
V
D S
, D rain-to-S ource V oltage (V )
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRFZ46NS/LPbF
60
50
Limited By Package
V
DS
V
GS
R
G
R
D
D.U.T.
V
-
DD
+
ID , Drain Current (A)
40
30
10V
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
Fig 10a.
Switching Time Test Circuit
20
10
0
25
50
75
100
125
150
175
T C , Case Temperature (°C)
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
V
DS
90%
Fig 9.
Maximum Drain Current Vs.
Case Temperature
10
Fig 10b.
Switching Time Waveforms
Thermal Response (Z
thJC
)
1
D = 0.50
0.20
0.10
0.1
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
0.001
0.01
0.01
0.00001
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.1
P
DM
t
1
t
2
1
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
Embedded System
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