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APT10M09B2VFR

Description
POWER MOS V FREDFET
CategoryDiscrete semiconductor    The transistor   
File Size145KB,4 Pages
ManufacturerADPOW
Websitehttp://www.advancedpower.com/
Download Datasheet Parametric View All

APT10M09B2VFR Overview

POWER MOS V FREDFET

APT10M09B2VFR Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerADPOW
package instructionIN-LINE, R-PSIP-T3
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresAVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)3000 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage100 V
Maximum drain current (ID)100 A
Maximum drain-source on-resistance0.009 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSIP-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)400 A
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
APT10M09B2VFR
APT10M09LVFR
100V
100A
0.009
POWER MOS V
®
FREDFET
B2VFR
Power MOS V
®
is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V
®
also achieves faster switching speeds through optimized gate layout.
T-MAX™
TO-264
LVFR
T-MAX™
or TO-264 Package
• Faster Switching
• Lower Leakage
MAXIMUM RATINGS
Symbol
V
DSS
I
D
I
DM
V
GS
V
GSM
P
D
T
J
,T
STG
T
L
I
AR
E
AR
E
AS
Parameter
Drain-Source Voltage
Continuous Drain Current
Pulsed Drain Current
1
6
• Avalanche Energy Rated
FAST RECOVERY BODY DIODE
G
S
D
All Ratings: T
C
= 25°C unless otherwise specified.
APT10M09B2VFR_LVFR
UNIT
Volts
Amps
100
@ T
C
= 25°C
100
400
±30
±40
625
5.00
-55 to 150
300
100
50
3000
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ T
C
= 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current
1
Volts
Watts
W/°C
°C
Amps
mJ
(Repetitive and Non-Repetitive)
1
4
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
R
DS(on)
I
DSS
I
GSS
V
GS(th)
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 250µA)
Drain-Source On-State Resistance
2
MIN
TYP
MAX
UNIT
Volts
100
0.009
100
500
±100
2
4
(V
GS
= 10V, I
D
= 50A)
Ohms
µA
nA
Volts
5-2004
050-5905 Rev A
Zero Gate Voltage Drain Current (V
DS
= 100V, V
GS
= 0V)
Zero Gate Voltage Drain Current (V
DS
= 80V, V
GS
= 0V, T
C
= 125°C)
Gate-Source Leakage Current (V
GS
= ±30V, V
DS
= 0V)
Gate Threshold Voltage (V
DS
= V
GS
, I
D
= 2.5mA)
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com

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