APT60M60JFLL_03 datasheet, PDF

APT60M60JFLL

600V 70A 0.060

Ω

POWER MOS 7

®

R

FREDFET

G

S

D

S

Power MOS 7 is a new generation of low loss, high voltage, N-Channel

enhancement mode power MOSFETS. Both conduction and switching

®

losses are addressed with Power MOS 7 by significantly lowering R

DS(ON)

®

and Q

g

. Power MOS 7 combines lower conduction and switching losses

along with exceptionally fast switching speeds inherent with APT's

patented metal gate structure.

• Lower Input Capacitance

• Lower Miller Capacitance

• Lower Gate Charge, Qg

• Increased Power Dissipation

• Easier To Drive

• Popular SOT-227 Package

•

FAST RECOVERY BODY DIODE

OT

S

2

-2

7

"UL Recognized"

ISOTOP

®

D

G

S

MAXIMUM RATINGS

Symbol

V

DSS

I

D

I

DM

V

GS

V

GSM

P

D

T

J

,T

STG

T

L

I

AR

E

AR

E

AS

Parameter

Drain-Source Voltage

Continuous Drain Current @ T

C

= 25°C

Pulsed Drain Current

1

All Ratings: T

C

= 25°C unless otherwise specified.

APT60M60JFLL

UNIT

Volts

Amps

600

70

280

±30

±40

694

5.56

-55 to 150

300

70

50

4

Gate-Source Voltage Continuous

Gate-Source Voltage Transient

Total Power Dissipation @ T

C

= 25°C

Linear Derating Factor

Operating and Storage Junction Temperature Range

Lead Temperature: 0.063" from Case for 10 Sec.

Avalanche Current

1

Volts

Watts

W/°C

°C

Amps

mJ

(Repetitive and Non-Repetitive)

1

Repetitive Avalanche Energy

Single Pulse Avalanche Energy

3600

STATIC ELECTRICAL CHARACTERISTICS

Symbol

BV

DSS

R

DS(on)

I

DSS

I

GSS

V

GS(th)

Characteristic / Test Conditions

Drain-Source Breakdown Voltage (V

GS

= 0V, I

D

= 250µA)

Drain-Source On-State Resistance

2

MIN

TYP

MAX

UNIT

Volts

600

0.060

250

1000

±100

3

5

(V

GS

= 10V, 35A)

Ohms

µA

nA

Volts

11-2003

050-7092 Rev A

Zero Gate Voltage Drain Current (V

DS

= 600V, V

GS

= 0V)

Zero Gate Voltage Drain Current (V

DS

= 480V, V

GS

= 0V, T

C

= 125°C)

Gate-Source Leakage Current (V

GS

= ±30V, V

DS

= 0V)

Gate Threshold Voltage (V

DS

= V

GS

, I

D

= 5mA)

CAUTION:

These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website - http://www.advancedpower.com

DYNAMIC CHARACTERISTICS

Symbol

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

E

on

E

off

Symbol

I

S

I

SM

V

SD

dv

/

dt

APT60M60JFLL

Test Conditions

V

GS

= 0V

V

DS

= 25V

f = 1 MHz

V

GS

= 10V

V

DD

= 300V

I

D

= 70A @ 25°C

RESISTIVE SWITCHING

V

GS

= 15V

V

DD

= 300V

I

D

= 70A @ 25°C

R

G

= 0.6Ω

6

INDUCTIVE SWITCHING @ 25°C

V

DD

= 400V, V

GS

= 15V

6

I

D

= 70A, R

G

= 5Ω

INDUCTIVE SWITCHING @ 125°C

V

DD

= 400V V

GS

= 15V

I

D

= 70A, R

G

= 5Ω

Characteristic

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge

3

MIN

TYP

MAX

UNIT

pF

12630

2202

157

289

74

146

21

16

51

12

1428

1386

2058

1691

MIN

TYP

MAX

Gate-Source Charge

Gate-Drain ("Miller ") Charge

Turn-on Delay Time

Rise Time

Turn-off Delay Time

Fall Time

Turn-on Switching Energy

Turn-off Switching Energy

Turn-on Switching Energy

Turn-off Switching Energy

Characteristic / Test Conditions

Continuous Source Current (Body Diode)

Pulsed Source Current

Diode Forward Voltage

Peak Diode Recovery

1

2

dt

nC

ns

µ

J

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

UNIT

Amps

Volts

V/ns

ns

70

280

1.3

15

T

j

= 25°C

T

j

= 125°C

T

j

= 25°C

T

j

= 125°C

T

j

= 25°C

T

j

= 125°C

MIN

(Body Diode)

(V

GS

= 0V, I

S

= -70A)

5

dv

/

t

rr

Reverse Recovery Time

(I

S

= -70A,

di

/

dt

= 100A/µs)

Reverse Recovery Charge

(I

S

= -70A,

di

/

dt

= 100A/µs)

Peak Recovery Current

(I

S

= -70A,

di

/

dt

= 100A/µs)

Characteristic

Junction to Case

Junction to Ambient

300

600

1.8

7.4

16

30

TYP

MAX

Q

rr

I

RRM

µC

Amps

THERMAL CHARACTERISTICS

Symbol

R

θJC

R

θJA

UNIT

°C/W

0.18

40

1 Repetitive Rating: Pulse width limited by maximum junction

temperature

2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%

3 See MIL-STD-750 Method 3471

0.20

Z

JC

, THERMAL IMPEDANCE (°C/W)

θ

4 Starting T

j

= +25°C, L = 1.47mH, R

G

= 25Ω, Peak I

L

= 70A

5

dv

/

dt

numbers reflect the limitations of the test circuit rather than the

device itself.

IS

≤

-

70A

di

/

dt

≤

700A/µs

VR

≤

600

TJ

≤

150

°

C

6 Eon includes diode reverse recovery. See figures 18, 20.

APT Reserves the right to change, without notice, the specifications and information contained herein.

0.16

0.9

0.7

0.12

0.5

0.08

0.3

0.04

0.1

0

0.05

10

-5

10

-4

SINGLE PULSE

Note:

PDM

t1

t2

Duty Factor D = t1/t2

Peak TJ = PDM x Z

θJC

+ TC

050-7092 Rev A

11-2003

10

-3

10

-2

10

-1

1.0

RECTANGULAR PULSE DURATION (SECONDS)

FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION

10

Typical Performance Curves

200

I

D

, DRAIN CURRENT (AMPERES)

Junction

temp. (°C)

RC MODEL

APT60M60JFLL

180

160

140

5.5V

120

100

80

60

40

4.5V

20

4V

0

5

10

15

20

25

30

V

DS

, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS

1.40

NORMALIZED TO

V

= 10V @ 35A

GS

VGS =15 & 10V

6.5V

6V

0.0244

0.0731F

Power

(watts)

0.133

0.701F

5V

0.0218

Case temperature. (°C)

20.1F

0

FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL

250

I

D

, DRAIN CURRENT (AMPERES)

VDS> ID (ON) x RDS (ON)MAX.

250 µSEC. PULSE TEST

@ <0.5 % DUTY CYCLE

R

DS

(ON), DRAIN-TO-SOURCE ON RESISTANCE

200

1.30

1.20

VGS=10V

1.10

150

TJ = -55°C

100

1.00

VGS=20V

50

TJ = +25°C

TJ = +125°C

0

1

2

3

4

5

6

7

8

9

V

GS

, GATE-TO-SOURCE VOLTAGE (VOLTS)

FIGURE 4, TRANSFER CHARACTERISTICS

0.90

0.80

0

40

80

120

160

200

I

D

, DRAIN CURRENT (AMPERES)

FIGURE 5, R

DS

(ON) vs DRAIN CURRENT

70

60

50

40

30

20

10

0

25

BV

DSS

, DRAIN-TO-SOURCE BREAKDOWN

VOLTAGE (NORMALIZED)

I

V

D

1.15

I

D

, DRAIN CURRENT (AMPERES)

1.10

1.05

1.00

0.95

0.90

-50 -25

0

25

50

75 100 125 150

T

J

, JUNCTION TEMPERATURE (°C)

FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE

1.2

R

DS

(ON), DRAIN-TO-SOURCE ON RESISTANCE

(NORMALIZED)

50

75

100

125

150

T

C

, CASE TEMPERATURE (°C)

FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE

2.5

= 35A

= 10V

GS

2.0

V

GS

(TH), THRESHOLD VOLTAGE

(NORMALIZED)

1.1

1.0

1.5

0.9

11-2003

050-7092 Rev A

1.0

0.8

0.5

0.7

0.6

-50

0.0

-50

-25

0

25 50

75 100 125 150

T

J

, JUNCTION TEMPERATURE (°C)

FIGURE 8, ON-RESISTANCE vs. TEMPERATURE

-25

0

25

50

75 100 125 150

T

C

, CASE TEMPERATURE (°C)

FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE

APT60M60JFLL

280

I

D

, DRAIN CURRENT (AMPERES)

OPERATION HERE

LIMITED BY RDS (ON)

40,000

100µS

10,000

C, CAPACITANCE (pF)

100

50

Ciss

1mS

10

5

TC =+25°C

TJ =+150°C

SINGLE PULSE

1

10

100

600

V

DS

, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

FIGURE 10, MAXIMUM SAFE OPERATING AREA

16

I

D

Coss

1,000

10mS

1

= 70A

I

DR

, REVERSE DRAIN CURRENT (AMPERES)

V

GS

, GATE-TO-SOURCE VOLTAGE (VOLTS)

0

10

20

30

40

50

V

DS

, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE

300

100

Crss

100

TJ =+150°C

TJ =+25°C

12

VDS= 120V

VDS= 300V

VDS= 480V

8

10

4

100 150 200 250 300 350 400

Q

g

, TOTAL GATE CHARGE (nC)

FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE

250

t

d(off)

200

t

d(on)

and t

d(off)

(ns)

0

50

0.3

0.5

0.7

0.9

1.1

1.3

1.5

V

SD

, SOURCE-TO-DRAIN VOLTAGE (VOLTS)

FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE

140

V

DD

G

1

= 400V

120

100

R

= 5Ω

T = 125°C

J

L = 100µH

V

DD

G

= 400V

t

f

150

R

= 5Ω

t

r

and t

f

(ns)

T = 125°C

J

80

60

40

L = 100µH

100

50

t

d(on)

20

0

t

r

0

60

80

100

120

I

D

(A)

FIGURE 14, DELAY TIMES vs CURRENT

V

DD

G

20

40

60

80

100

120

I

D

(A)

FIGURE 15, RISE AND FALL TIMES vs CURRENT

10000

V

I

DD

0

20

40

4000

3500

SWITCHING ENERGY (µJ)

= 400V

R

= 5Ω

D

J

= 70A

T = 125°C

J

SWITCHING ENERGY (µJ)

3000

2500

2000

1500

1000

500

0

L = 100µH

E

ON

includes

diode reverse recovery.

8000

T = 125°C

L = 100µH

E

ON

includes

diode reverse recovery.

E

off

6000

E

on

4000

E

on

11-2003

E

off

2000

050-7092 Rev A

0

20

40

10 15 20 25 30 35 40 45 50

R

G

, GATE RESISTANCE (Ohms)

FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE

0

5

60

80

100

120

I

D

(A)

FIGURE 16, SWITCHING ENERGY vs CURRENT

Typical Performance Curves

Gate Voltage

APT60M60JFLL

10 %

T = 125 C

J

90%

Gate Voltage

Drain Voltage

T = 125 C

J

t

d(on)

Drain Current

t

d(off)

90%

t

r

5%

Switching Energy

tf

Drain Voltage

Switching Energy

10 %

10%

Drain Current

0

Figure 18, Turn-on Switching Waveforms and Definitions

Figure 19, Turn-off Switching Waveforms and Definitions

APT60DF60

V

DD

I

C

V

CE

G

D.U.T.

Figure 20, Inductive Switching Test Circuit

SOT-227 (ISOTOP

®

) Package Outline

31.5 (1.240)

31.7 (1.248)

7.8 (.307)

8.2 (.322)

W=4.1 (.161)

W=4.3 (.169)

H=4.8 (.187)

H=4.9 (.193)

(4 places)

11.8 (.463)

12.2 (.480)

8.9 (.350)

9.6 (.378)

Hex Nut M4

(4 places)

r = 4.0 (.157)

(2 places)

4.0 (.157)

4.2 (.165)

(2 places)

25.2 (0.992)

0.75 (.030) 12.6 (.496) 25.4 (1.000)

0.85 (.033) 12.8 (.504)

14.9 (.587)

15.1 (.594)

30.1 (1.185)

30.3 (1.193)

38.0 (1.496)

38.2 (1.504)

* Source

Drain

* Source terminals are shorted

internally. Current handling

capability is equal for either

Source terminal.

* Source

Dimensions in Millimeters and (Inches)

ISOTOP

®

is a Registered Trademark of SGS Thomson.

Gate

APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522

050-7092 Rev A

11-2003

3.3 (.129)

3.6 (.143)

1.95 (.077)

2.14 (.084)

APT60M60JFLL_03

APT60M60JFLL_03 Overview

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