ZXM62P03E6
30V P-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V
(BR)DSS
=-30V; R
DS(ON)
=0.15
DESCRIPTION
This new generation of high density MOSFETs from Zetex utilizes a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
I
D
=-2.6A
FEATURES
•
Low on-resistance
•
Fast switching speed
•
Low threshold
•
Low gate drive
•
SOT23-6 package
SOT23-6
APPLICATIONS
•
DC - DC converters
•
Power management functions
•
Disconnect switches
•
Motor control
ORDERING INFORMATION
DEVICE
ZXM62P03E6TA
ZXM62P03E6TC
REEL SIZE
(inches)
7
13
TAPE WIDTH
(mm)
8 embossed
8 embossed
QUANTITY
PER REEL
3,000
10,000
Pinout
DEVICE MARKING
2P03
Top view
ISSUE 1 - OCTOBER 2005
1
SEMICONDUCTORS
ZXM62P03E6
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Drain-Source Voltage
Gate Source Voltage
SYMBOL
V
DSS
V
GS
LIMIT
20
12
1.5
1.2
7.4
0.54
7.4
625
5
806
6.4
-55 to +150
UNIT
V
V
A
A
A
A
mW
mW/°C
mW
mW/°C
°C
Continuous Drain Current (V
GS
=4.5V; T
A
=25°C)(a) I
D
(V
GS
=4.5V; T
A
=70°C)(a)
Pulsed Drain Current (c)
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Power Dissipation at T
A
=25°C (a)
Linear Derating Factor
Power Dissipation at T
A
=25°C (b)
Linear Derating Factor
Operating and Storage Temperature Range
I
DM
I
S
I
SM
P
D
P
D
T
j
:T
stg
THERMAL RESISTANCE
PARAMETER
Junction to Ambient (a)
Junction to Ambient (b)
SYMBOL
R
θJA
R
θJA
VALUE
113
73
UNIT
°C/W
°C/W
NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 5 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph.
ISSUE 1 - OCTOBER 2005
2
SEMICONDUCTORS
ZXM62P03E6
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated)
PARAMETER
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
-1.0
0.15
0.23
1.1
-30
-1
100
V
µA
nA
V
Ω
Ω
S
I
D
=-250µA, V
GS
=0V
V
DS
=-30V, V
GS
=0V
V
GS
= 20V, V
DS
=0V
I =-250µA, V
DS
= V
GS
D
SYMBOL
MIN.
TYP.
MAX.
UNIT CONDITIONS
Static Drain-Source On-State Resistance R
DS(on)
(1)
Forward Transconductance (3)
DYNAMIC (3)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING (2) (3)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate Drain Charge
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
Reverse Recovery Time (3)
Reverse Recovery Charge(3)
V
SD
t
rr
Q
rr
19.9
13
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
2.8
6.4
13.9
10.3
C
iss
C
oss
C
rss
330
120
45
g
fs
V
GS
=-10V, I
D
=-1.6A
V
GS
=-4.5V, I
D
=-0.8A
V
DS
=-10V,I
D
=-0.8A
pF
pF
pF
V
DS
=-25 V, V
GS
=0V,
f=1MHz
ns
ns
ns
ns
10.2
1.5
3
nC
nC
nC
V
DS
=-24V,V
GS
=-10V,
I
D
=-1.6A
(Refer to test circuit)
V
DD
=-15V, I
D
=-1.6A
R
G
=6.2Ω, R
D
=25Ω
(Refer to test circuit)
-0.95
V
ns
nC
T
j
=25°C, I
S
=-1.6A,
V
GS
=0V
T
j
=25°C, I
F
=-1.6A,
di/dt= 100A/µs
(1) Measured under pulsed conditions. Width=300µs. Duty cycle 2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 1 - OCTOBER 2005
4
SEMICONDUCTORS
Wireless Connectivity
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