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ZXM64N02X_04

Description
20V N-CHANNEL ENHANCEMENT MODE MOSFET
File Size165KB,7 Pages
ManufacturerZetex Semiconductors
Websitehttp://www.zetex.com/
Download Datasheet Compare View All

ZXM64N02X_04 Overview

20V N-CHANNEL ENHANCEMENT MODE MOSFET

ZXM64N02X
20V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V
(BR)DSS
=20V; R
DS(ON)
=0.040Ω; I
D
=5.4A
DESCRIPTION
This new generation of high density MOSFETs from Zetex utilises a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
FEATURES
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
Low profile SOIC package
MSOP8
APPLICATIONS
DC - DC Converters
Power Management Functions
Disconnect switches
Motor control
S
D
D
D
D
ORDERING INFORMATION
DEVICE
ZXM64N02XTA
ZXM64N02XTC
REEL SIZE
(inches)
7
13
TAPE WIDTH (mm)
12mm embossed
12mm embossed
QUANTITY
PER REEL
1000 units
4000 units
S
G
3
DEVICE MARKING
ZXM4N02
ISSUE 1 - JUNE 2004
1
4
Top View
5
6 7
S
2
1
8

ZXM64N02X_04 Related Products

ZXM64N02X_04 ZXM64N02XTA ZXM64N02X
Description 20V N-CHANNEL ENHANCEMENT MODE MOSFET 20V N-CHANNEL ENHANCEMENT MODE MOSFET 20V N-CHANNEL ENHANCEMENT MODE MOSFET
Is it Rohs certified? - conform to conform to
Maker - Zetex Semiconductors Zetex Semiconductors
package instruction - MSOP-8 MSOP-8
Reach Compliance Code - unknow not_compliant
ECCN code - EAR99 EAR99
Configuration - SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage - 20 V 20 V
Maximum drain current (ID) - 5.4 A 3.9 A
Maximum drain-source on-resistance - 0.04 Ω 0.05 Ω
FET technology - METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code - S-PDSO-G8 R-PDSO-G8
JESD-609 code - e3 e3
Humidity sensitivity level - 1 1
Number of components - 1 1
Number of terminals - 8 8
Operating mode - ENHANCEMENT MODE ENHANCEMENT MODE
Package body material - PLASTIC/EPOXY PLASTIC/EPOXY
Package shape - SQUARE RECTANGULAR
Package form - SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) - 260 260
Polarity/channel type - N-CHANNEL N-CHANNEL
Certification status - Not Qualified Not Qualified
surface mount - YES YES
Terminal surface - Matte Tin (Sn) MATTE TIN
Terminal form - GULL WING GULL WING
Terminal location - DUAL DUAL
Maximum time at peak reflow temperature - 40 40
transistor applications - SWITCHING SWITCHING
Transistor component materials - SILICON SILICON
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