ZXMN2A02N8
20V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V
(BR)DSS
= 20V; R
DS(ON)
= 0.02
I
D
= 10.2A
DESCRIPTION
This new generation of TRENCH MOSFETs from Zetex utilizes a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
FEATURES
•
Low on-resistance
•
Fast switching speed
•
Low threshold
•
Low gate drive
•
Low profile SOIC package
SO8
APPLICATIONS
•
Disconnect switches
•
Motor control
ORDERING INFORMATION
DEVICE
ZXMN2A02N8TA
ZXMN2A02N8TC
REEL
SIZE
7”
13”
TAPE
WIDTH
12mm
12mm
QUANTITY
PER REEL
500 units
2500 units
DEVICE MARKING
•
ZXMN
2A02
Top View
ISSUE 6 - FEBRUARY 2007
1
SEMICONDUCTORS
ZXMN2A02N8
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Drain-Source Voltage
Gate Source Voltage
Continuous Drain
Current V
GS
=10V; T
A
=25°C
(b)
V
GS
=10V; T
A
=70°C
(b)
V
GS
=10V; T
A
=25°C
(a)
(c)
(b)
SYMBOL
V
DSS
V
GS
I
D
LIMIT
20
12
10.2
8.2
8.3
50
4.3
50
1.56
12.5
2.5
20
-55 to 150
UNIT
V
V
A
Pulsed Drain Current
I
DM
I
S
I
SM
P
D
P
D
T
j
:T
stg
A
A
A
W
mW/°C
W
mW/°C
°C
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Power Dissipation at T
A
=25°C
(a)
Linear Derating Factor
Power Dissipation at T
A
=25°C
(b)
Linear Derating Factor
(c)
Operating and Storage Temperature Range
THERMAL RESISTANCE
PARAMETER
Junction to Ambient
(a)
Junction to Ambient
(b)
SYMBOL
R
θJA
R
θJA
VALUE
80
50
UNIT
°C/W
°C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 10 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.02, pulse width 300 s - pulse width limited by maximum junction temperature.
ISSUE 6 - FEBRUARY 2007
SEMICONDUCTORS
2
ZXMN2A02N8
CHARACTERISTICS
ISSUE 6 - FEBRUARY 2007
3
SEMICONDUCTORS
ZXMN2A02N8
ELECTRICAL CHARACTERISTICS
(at T
amb
= 25°C unless otherwise stated).
PARAMETER
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
Static Drain-Source On-State
Resistance
(1)
(1)(3)
SYMBOL
V (BR)DSS
I DSS
I GSS
V GS(th)
R DS(on)
g fs
C iss
C oss
C rss
t d(on)
tr
t d(off)
tf
Qg
Q gs
Q gd
V SD
t rr
MIN.
20
TYP.
MAX. UNIT
V
1
100
A
nA
V
0.02
0.04
CONDITIONS.
I D =250μA, V GS =0V
V DS =20V, V GS =0V
V GS = 12V, V DS =0V
I =250 A, V DS = V GS
D
V GS =4.5V, I D =11A
V GS =2.5V, I D =8.4A
V DS =10V,I D =11A
0.7
Forward Transconductance
DYNAMIC
(3)
27
1900
356
218
7.9
10
33.3
13.6
18.9
5.2
4.9
0.85
16.3
7.8
0.95
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING
(2) (3)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
SOURCE-DRAIN DIODE
Diode Forward Voltage
(1)
Reverse Recovery Time
(3)
Reverse Recovery Charge
(3)
V DS =10V, V GS =0V,
f=1MHz
V DD =10V, I D =1A
R G
≅6.0Ω,
V GS =4.5V
V DS =10V,V GS =4.5V,
I D =11A
T J =25°C, I S =11.5A,
V GS =0V
T J =25°C, I F =2.1A,
di/dt= 100A/μs
Q rr
NOTES
(1) Measured under pulsed conditions. Width 300μs. Duty cycle 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 6 - FEBRUARY 2007
SEMICONDUCTORS
4
ZXMN2A02N8
CHARACTERISTICS
ISSUE 6 - FEBRUARY 2007
5
SEMICONDUCTORS
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