ZXMN2A03E6
20V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V
(BR)DSS
= 20V; R
DS(ON)
= 0.055
I
D
= 4.6A
DESCRIPTION
This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure
that combines the benefits of low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage, power management
applications.
SOT23-6
FEATURES
•
Low on-resistance
•
Fast switching speed
•
Low threshold
•
Low gate drive
•
SOT23-6 package
APPLICATIONS
•
DC - DC Converters
•
Power Management Functions
•
Disconnect switches
•
Motor control
ORDERING INFORMATION
DEVICE
ZXMN2A03E6TA
ZXMN2A03E6TC
REEL
SIZE
7”
13”
TAPE
WIDTH
8mm
8mm
QUANTITY
PER REEL
3000 units
10000 units
PINOUT
DEVICE MARKING
•
2A3
Top View
ISSUE 4 - SEPTEMBER 2005
1
ZXMN2A03E6
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Gate Source Voltage
Continuous Drain Current V GS =10V; T A =25°C (b)
V GS =10V; T A =70°C (b)
V GS =10V; T A =25°C (a)
Pulsed Drain Current (c)
Continuous Source Current (Body Diode) (b)
Pulsed Source Current (Body Diode) (c)
Power Dissipation at T A =25°C (a)
Linear Derating Factor
Power Dissipation at T A =25°C (b)
Linear Derating Factor
Operating and Storage Temperature Range
SYMBOL
V DSS
V GS
ID
LIMIT
20
12
4.6
3.7
3.7
16
2.7
16
1.1
8.8
1.7
13.6
-55 to +150
UNIT
V
V
A
I DM
IS
I SM
PD
PD
T j :T stg
A
A
A
W
mW/°C
W
mW/°C
°C
THERMAL RESISTANCE
PARAMETER
Junction to Ambient (a)
Junction to Ambient (b)
SYMBOL
R
θJA
R
θJA
VALUE
113
70
UNIT
°C/W
°C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 5 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.05, pulse width 10 s - pulse width limited by maximum junction temperature. Refer to
Transient Thermal Impedance graph. Refer to transient thermal impedance graph.
ISSUE 4 - SEPTEMBER 2005
2
ZXMN2A03E6
TYPICAL CHARACTERISTICS
ISSUE 4 - SEPTEMBER 2005
3
ZXMN2A03E6
ELECTRICAL CHARACTERISTICS
(at T
A
= 25°C unless otherwise stated).
PARAMETER
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
V (BR)DSS
I DSS
I GSS
V GS(th)
0.7
0.055
0.100
13
S
20
1
100
V
A
nA
V
I D =250µA, V GS =0V
V DS =20V, V GS =0V
V GS = 12V, V DS =0V
I =250µA, V DS = V GS
D
V GS =4.5V,
V GS =2.5V,
I D =7.2A
I D =4.6A
SYMBOL
MIN.
TYP.
MAX. UNIT
CONDITIONS.
Static Drain-Source On-State Resistance R DS(on)
(1)
Forward Transconductance (1)(3)
DYNAMIC
(3)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING(2)
(3)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
Reverse Recovery Time (3)
Reverse Recovery Charge (3)
V SD
t rr
Q rr
0.85
12
4.9
t d(on)
tr
t d(off)
tf
Qg
Q gs
Q gd
4.7
5.7
18.5
10.5
8.2
2.3
2.0
C iss
C oss
C rss
837
168
90
g fs
V DS =10V,I D =7.2A
pF
pF
pF
V DS =10 V, V GS =0V,
f=1MHz
ns
ns
ns
ns
nC
nC
nC
V DS =10V,V GS =4.5V,
I
D
=7.2A
V DD =10V, I D =1A
R G =6.0Ω, V GS =4.5V
0.95
V
ns
nC
T J =25°C, I S =4.1A,
V GS =0V
T J =25°C, I F =1.9A,
di/dt= 100A/µs
NOTES
(1) Measured under pulsed conditions. Width=300µs. Duty cycle
≤
2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 4 - SEPTEMBER 2005
4
ZXMN2A03E6
TYPICAL CHARACTERISTICS
T = 25°C
7V
I
D
Drain Current (A)
2V
I
D
Drain Current (A)
10
3V
2.5V
T = 150°C
7V
3V
2.5V
2V
1.5V
V
GS
1V
10
1
V
GS
1.5V
1
0.1
0.1
0.1
V
DS
Drain-Source Voltage (V)
1
10
0.1
V
DS
Drain-Source Voltage (V)
1
10
Output Characteristics
1.6
Normalised R
DS(on)
and V
GS(th)
Output Characteristics
V
GS
= 4.5V
I
D
= 7.2A
R
DS(on)
10
I
D
Drain Current (A)
1.4
1.2
1.0
0.8
0.6
0.4
-50
0
T = 150°C
T = 25°C
1
V
GS(th)
V
GS
= V
DS
I
D
= 250uA
V
DS
= 10V
0.1
1
2
3
50
100
150
V
GS
Gate-Source Voltage (V)
Tj Junction Temperature (°C)
Typical Transfer Characteristics
R
DS(on)
Drain-Source On-Resistance
(Ω)
1.5V
T = 25°C
V
GS
Normalised Curves v Temperature
10
T = 150°C
10
2V
2.5V
3V
I
SD
Reverse Drain Current (A)
T = 25°C
1
1
0.1
0.1
1
10
7V
0.1
0.2
On-Resistance v Drain Current
I
D
Drain Current (A)
V
SD
Source-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.4
0.6
0.8
1.0
1.2
ISSUE 4 - SEPTEMBER 2005
5
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