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ZXMN2A04DN8_04

Description
5900 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
Categorysemiconductor    Discrete semiconductor   
File Size170KB,7 Pages
ManufacturerZetex Semiconductors
Websitehttp://www.zetex.com/
Download Datasheet Parametric Compare View All

ZXMN2A04DN8_04 Overview

5900 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET

ZXMN2A04DN8_04 Parametric

Parameter NameAttribute value
Number of terminals8
Minimum breakdown voltage20 V
Processing package descriptionSO-8
Lead-freeYes
EU RoHS regulationsYes
China RoHS regulationsYes
stateACTIVE
packaging shapeRECTANGULAR
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
terminal coatingMATTE TIN
Terminal locationDUAL
Packaging MaterialsPLASTIC/EPOXY
structureSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Number of components2
transistor applicationsSWITCHING
Transistor component materialsSILICON
Channel typeN-CHANNEL
field effect transistor technologyMETAL-OXIDE SEMICONDUCTOR
operating modeENHANCEMENT
Transistor typeGENERAL PURPOSE SMALL SIGNAL
Maximum leakage current5.9 A
Maximum drain on-resistance0.0250 ohm
ZXMN2A04DN8
DUAL 20V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V
(BR)DSS
= 20V; R
DS(ON)
= 0.025
DESCRIPTION
; I
D
= 7.7A
This new generation of TRENCH MOSFETs from Zetex utilizes a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
FEATURES
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
Low profile SOIC package
SO8
APPLICATIONS
DC - DC converters
Power management functions
Disconnect switches
Motor control
ORDERING INFORMATION
DEVICE
ZXMN2A04DN8TA
ZXMN2A04DN8TC
REEL
7
’‘
13’‘
TAPE
WIDTH
12mm
12mm
QUANTITY
PER REEL
500 units
2500 units
PINOUT
DEVICE MARKING
ZXMN
2A04D
Top view
ISSUE 1 - JULY 2004
1
SEMICONDUCTORS

ZXMN2A04DN8_04 Related Products

ZXMN2A04DN8_04 ZXMN2A04DN8 ZXMN2A04DN8TC
Description 5900 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET 5900 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET 5900 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
Number of terminals 8 8 8
surface mount Yes Yes YES
Terminal form GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL
Number of components 2 2 2
transistor applications SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON
Minimum breakdown voltage 20 V 20 V -
Processing package description SO-8 SO-8 -
Lead-free Yes Yes -
EU RoHS regulations Yes Yes -
China RoHS regulations Yes Yes -
state ACTIVE ACTIVE -
packaging shape RECTANGULAR RECTANGULAR -
Package Size SMALL OUTLINE SMALL OUTLINE -
terminal coating MATTE TIN MATTE TIN -
Packaging Materials PLASTIC/EPOXY PLASTIC/EPOXY -
structure SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE -
Channel type N-CHANNEL N-CHANNEL -
field effect transistor technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR -
operating mode ENHANCEMENT ENHANCEMENT -
Transistor type GENERAL PURPOSE SMALL SIGNAL GENERAL PURPOSE SMALL SIGNAL -
Maximum leakage current 5.9 A 5.9 A -
Maximum drain on-resistance 0.0250 ohm 0.0250 ohm -
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