ZXMP3A13F
30V P-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V
(BR)DSS
= -30V; R
DS(ON)
= 0.21
I
D
= -1.6A
DESCRIPTION
This new generation of trench MOSFETs from Zetex utilizes a unique structure that
combines the benefits of low on-resistance with fast switching speed. This makes
them ideal for high efficiency, low voltage, power management applications.
FEATURES
•
Low on-resistance
•
Fast switching speed
•
Low threshold
•
Low gate drive
•
SOT23 package
SOT23
APPLICATIONS
•
DC - DC converters
•
Power management functions
•
Disconnect switches
•
Motor control
ORDERING INFORMATION
DEVICE
ZXMP3A13FTA
ZXMP3A13FTC
REEL
SIZE
7”
13”
TAPE
WIDTH
8mm
8mm
QUANTITY
PER REEL
3000 units
10000 units
PINOUT
DEVICE MARKING
•
313
Top View
ISSUE 1 - MAY 2007
1
ZXMP3A13F
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Drain-Source Voltage
Gate Source Voltage
Continuous Drain Current V
GS
=10V; T
A
=25°C (b)
V
GS
=10V; T
A
=70°C (b)
V
GS
=10V; T
A
=25°C (a)
Pulsed Drain Current (c)
Continuous Source Current (Body Diode) (b)
Pulsed Source Current (Body Diode) (c)
Power Dissipation at T
A
=25°C (a)
Linear Derating Factor
Power Dissipation at T
A
=25°C (b)
Linear Derating Factor
Operating and Storage Temperature Range
SYMBOL
V
DSS
V
GS
I
D
LIMIT
-30
20
-1.6
-1.3
-1.4
-6
-1.2
-6
625
5
806
6.4
-55 to +150
UNIT
V
V
A
I
DM
I
S
I
SM
P
D
P
D
T
j
:T
stg
A
A
A
mW
mW/°C
mW
mW/°C
°C
THERMAL RESISTANCE
PARAMETER
Junction to ambient (a)
Junction to ambient (b)
SYMBOL
R
θJA
R
θJA
VALUE
200
155
UNIT
°C/W
°C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 5 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.05, pulse width 10 s - pulse width limited by maximum junction temperature. Refer to
Transient Thermal Impedance graph.
ISSUE 1 - MAY 2007
2
ZXMP3A13F
CHARACTERISTICS
Max Power Dissipation (W)
10
0.7
R
DS(on)
Limited
-I
D
Drain Current (A)
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
20
40
60
80
100 120 140 160
1
DC
1s
100ms
10ms
T
amb
=25°C
1ms
100µs
100m
10m
Single Pulse
100m
1
10
-V
DS
Drain-Source Voltage (V)
Temperature (°C)
Safe Operating Area
Derating Curve
Single Pulse
T
amb
=25°C
Thermal Resistance (°C/W)
200
150
MaximumPower (W)
1k
T
amb
=25°C
10
D=0.5
100
Single Pulse
50
D=0.2
D=0.05
D=0.1
1
100µ 1m
10m 100m
1
10
100
1k
0
100µ 1m
10m 100m
1
10
100
Pulse Width (s)
Pulse Width (s)
Transient Thermal Impedance
Pulse Power Dissipation
ISSUE 1 - MAY 2007
3
ZXMP3A13F
ELECTRICAL CHARACTERISTICS
(at T
A
= 25°C unless otherwise stated)
PARAMETER
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
-1.0
0.210
0.330
2.4
S
-30
-0.5
100
V
A
nA
V
I
D
=-250 A, V
GS
=0V
V
DS
=-30V, V
GS
=0V
V
GS
= 20V, V
DS
=0V
I =-250 A, V
DS
= V
GS
D
SYMBOL
MIN.
TYP.
MAX. UNIT CONDITIONS
Static Drain-Source On-State Resistance (1) R
DS(on)
Forward Transconductance (1)(3)
DYNAMIC
(3)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING(2)
(3)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
Reverse Recovery Time (3)
Reverse Recovery Charge (3)
V
SD
t
rr
Q
rr
-0.85
15.6
9.6
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
g
Q
gs
Q
gd
1.5
3.0
11.1
7.6
3.8
6.4
0.69
2.0
C
iss
C
oss
C
rss
206
59.3
49.2
g
fs
V
GS
=-10V, I
D
=-1.4A
V
GS
=-4.5V, I
D
=-1.1A
V
DS
=-15V,I
D
=-1.4A
pF
pF
pF
V
DS
=-15V, V
GS
=0V,
f=1MHz
ns
ns
ns
ns
nC
nC
nC
nC
V
DS
=-15V,V
GS
=-10V,
I
D
=-1.4A
V
DS
=-15V,V
GS
=-5V,
I
D
=-1.4A
V
DD
=-15V, I
D
=-1A
R
G
=6.0 , V
GS
=-10V
-0.95
V
ns
nC
T
J
=25°C, I
S
=-1.1A,
V
GS
=0V
T
J
=25°C, I
F
=-0.95A,
di/dt= 100A/μs
NOTES:
(1) Measured under pulsed conditions. Width=300μs. Duty cycle
≤
2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 1 - MAY 2007
4
ZXMP3A13F
TYPICAL CHARACTERISTICS
10
T = 25°C
10V
-I
D
Drain Current (A)
-I
D
Drain Current (A)
5V
1
4V
3.5V
3V
2.5V
-V
GS
2V
10
T = 150°C
10V
5V
4V
3.5V
3V
2.5V
2V
1
0.1
0.1
-V
GS
1.5V
0.01
0.1
0.01
0.1
-V
DS
Drain-Source Voltage (V)
1
10
-V
DS
Drain-Source Voltage (V)
1
10
Output Characteristics
1.6
Output Characteristics
Normalised R
DS(on)
and V
GS(th)
-I
D
Drain Current (A)
1.4
1.2
1.0
V
GS
= -10V
I
D
= -1.4A
R
DS(on)
T = 150°C
1
T = 25°C
V
GS(th)
0.1
1
2
3
0.8
0.6
-50
0
-V
DS
= 10V
V
GS
= V
DS
I
D
= -250uA
4
5
50
100
150
-V
GS
Gate-Source Voltage (V)
Tj Junction Temperature (°C)
Typical Transfer Characteristics
R
DS(on)
Drain-Source On-Resistance
(Ω)
100
2V
-V
GS
2.5V
3V
3.5V
4V
T = 25°C
Normalised Curves v Temperature
10
T = 150°C
-I
SD
Reverse Drain Current (A)
10
1
T = 25°C
1
5V
10V
0.1
0.1
0.1
1
10
0.01
0.2
On-Resistance v Drain Current
-I
D
Drain Current (A)
-V
SD
Source-Drain Voltage (V)
0.4
0.6
0.8
1.0
1.2
1.4
Source-Drain Diode Forward Voltage
ISSUE 1 - MAY 2007
5
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