ZXTN25012EFL
12V, SOT23, NPN low power transistor
Summary
BV
CEO
> 12V
BV
ECO
> 4.5V
h
FE
> 500
I
C(cont)
= 2A
V
CE(sat)
< 65 mV @ 1A
R
CE(sat)
= 46 m
P
D
= 350mW
Description
Advanced process capability has been used to achieve high current gain
hold up making this device ideal for applications requiring high pulse
currents.
C
B
Features
•
•
•
High peak current
Low saturation voltage
6V reverse blocking voltage
E
Applications
•
•
•
•
MOSFET and IGBT gate driving
DC-DC conversion
LED driving
Interface between low voltage IC's and load
E
C
B
Pinout - top view
Ordering information
Device
ZXTN25012EFLTA
Reel size
(inches)
7
Tape width
(mm)
8
Quantity
per reel
3000
Device marking
1B6
Issue 2 - January 2007
© Zetex Semiconductors plc 2007
1
www.zetex.com
ZXTN25012EFL
Absolute maximum ratings
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-collector voltage
Emitter-base voltage
Continuous collector current
(a)
Base current
Peak pulse current
Power dissipation @ T
amb
=25°C
(a)
Linear derating factor
Operating and storage temperature range
T
j
, T
stg
Symbol
V
CBO
V
CEO
V
ECO
V
EBO
I
C
I
B
I
CM
P
D
Limit
20
12
4.5
7
2
500
15
350
2.8
- 55 to 150
Unit
V
V
V
V
A
mA
A
mW
mW/°C
°C
Thermal resistance
Parameter
Junction to ambient
(a)
Symbol
R
JA
Limit
357
Unit
°C/W
NOTES:
(a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
Issue 2 - January 2007
© Zetex Semiconductors plc 2007
2
www.zetex.com
ZXTN25012EFL
Characteristics
Issue 2 - January 2007
© Zetex Semiconductors plc 2007
3
www.zetex.com
ZXTN25012EFL
Electrical characteristics (at T
amb
= 25°C unless otherwise stated)
Parameter
Collector-base breakdown
voltage
Collector-emitter breakdown
voltage
Emitter-base breakdown
voltage
Emitter-collector breakdown
voltage (reverse blocking)
Emitter-collector breakdown
voltage (base open)
Collector cut-off current
Symbol
BV
CBO
BV
CEO
BV
EBO
BV
ECX
BV
ECO
I
CBO
Min.
20
12
7
6
4.5
Typ.
40
17
8.3
8
5.5
<1
50
20
Emitter-base cut-off current
Collector-emitter saturation
voltage
I
EBO
V
CE(sat)
<1
50
70
105
235
Base-emitter saturation
voltage
Base-emitter turn-on voltage
V
BE(sat)
V
BE(on)
500
500
370
210
30
Transition frequency
Output capacitance
Delay time
Rise time
Storage time
Fall time
f
T
C
obo
t
(d)
t
(r)
t
(s)
t
(f)
830
745
800
700
575
335
55
260
25
71
70
233
72
300 s; duty cycle
2%.
Max.
Unit Conditions
V
V
V
V
V
nA
A
nA
mV
mV
mV
mV
mV
mV
I
C
= 100 A
I
C
= 10mA
(*)
I
E
= 100 A
I
E
= 100 A, R
BC
1k or
0.25v > V
BC
> -0.25V
I
E
= 100 A,
V
CB
= 16V
V
CB
= 16V, T
amb
= 100°C
V
EB
= 5.6V
I
C
= 1A, I
B
= 100mA
(*)
I
C
= 1A, I
B
= 10mA
(*)
I
C
= 2A, I
B
= 40mA
(*)
I
C
= 5A, I
B
= 100mA
(*)
I
C
= 2A, I
B
= 40mA
(*)
I
C
= 2A, V
CE
= 2V
(*)
I
C
= 10mA, V
CE
= 2V
(*)
I
C
= 1A, V
CE
= 2V
(*)
I
C
= 2A, V
CE
= 2V
(*)
I
C
= 5A, V
CE
= 2V
(*)
I
C
= 15A, V
CE
= 2V
(*)
MHz
I
C
= 50mA, V
CE
= 10V
f = 100MHz
V
CB
= 10V, f = 1MHz
(*)
V
CC
= 10V
I
C
= 1A,
I
B1
= I
B2
= 10mA
50
65
85
130
300
950
850
1500
Static forward current transfer h
FE
ratio
35
pF
ns
ns
ns
ns
NOTES:
(*) Measured under pulsed conditions. Pulse width
Issue 2 - January 2007
© Zetex Semiconductors plc 2007
4
www.zetex.com
ZXTN25012EFL
Typical characteristics
Issue 2 - January 2007
© Zetex Semiconductors plc 2007
5
www.zetex.com
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