ZXTP25015DFH
15V, SOT23, PNP medium power transistor
Summary
BV
CEO
> -15V
BV
ECO
> -3V
I
C(cont)
= -4A
R
CE(sat)
= 33m
V
CE(sat)
< -55mV @ 1A
P
D
= 1.25W
Complementary part number ZXTN25015DFH
Description
Advanced process capability and package design have been used to
maximize the power handling and performance of this small outline
transistor. The compact size and ratings of this device make it ideally
suited to applications where space is at a premium.
C
B
Features
•
•
•
•
•
High power dissipation SOT23 package
High peak current
Low saturation voltage
15V forward blocking voltage
3V reverse blocking voltage
E
Applications
•
•
•
•
•
MOSFET and IGBT gate driving
DC - DC converters
Motor drive
High side driver
Load disconnect switch
E
C
B
Pinout - top view
Ordering information
Device
ZXTP25015DFHTA
Reel size
(inches)
7
Tape width
(mm)
8
Quantity per reel
3,000
Device marking
1A7
Issue 1 - June 2006
© Zetex Semiconductors plc 2006
1
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ZXTP25015DFH
Absolute maximum ratings
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-collector voltage (reverse blocking)
Emitter-base voltage
Continuous collector current
(b)
Base current
Peak pulse current
Power dissipation at T
amb
=25°C
(a)
Linear derating factor
Power dissipation at T
amb
=25°C
(b)
Linear derating factor
Power dissipation at T
amb
=25°C
(d)
Linear derating factor
Power dissipation at T
amb
=25°C
(d)
Linear derating factor
Operating and storage temperature range
T
j
, T
stg
P
D
P
D
P
D
Symbol
V
CBO
V
CEO
V
ECO
V
EBO
I
C
I
B
I
CM
P
D
Limit
-15
-15
-3
-7
-4
-1
-10
0.73
5.84
1.05
8.4
1.25
9.6
1.81
14.5
-55 to 150
Unit
V
V
V
V
A
A
A
W
mW/°C
W
mW/°C
W
mW/°C
W
mW/°C
°C
Thermal resistance
Parameter
Junction to ambient
(a)
Junction to ambient
(b)
Junction to ambient
(c)
Junction to ambient
(d)
Symbol
R
JA
R
JA
R
JA
R
JA
Limit
171
119
100
69
Unit
°C/W
°C/W
°C/W
°C/W
NOTES:
(a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
(b) Mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.
(c) Mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.
(d) As (c) above measured at t<5secs.
Issue 1 - June 2006
© Zetex Semiconductors plc 2006
2
www.zetex.com
ZXTP25015DFH
Characteristics
Issue 1 - June 2006
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3
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ZXTP25015DFH
Electrical characteristics (at T
amb
= 25°C unless otherwise stated)
Parameter
Collector-base breakdown
voltage
Collector-emitter breakdown
voltage (base open)
Emitter-base breakdown
voltage
Emitter-collector breakdown
voltage (base open)
Collector-base cut-off current
Emitter-base cut-off current
Collector-emitter saturation
voltage
Symbol
BV
CBO
BV
CEO
BV
EBO
BV
ECO
I
CBO
I
EBO
V
CE(sat)
Min.
-15
-15
-7
-3
Typ.
-35
-30
-8.4
-8.2
<-1
<-1
-45
-110
-130
-160
-165
Base-emitter saturation
voltage
Base-emitter turn-on voltage
V
BE(sat)
V
BE(on)
300
200
90
-930
-810
450
315
145
30
Transition frequency
Output capacitance
Delay time
Rise time
Storage time
Fall time
f
T
C
OBO
t
d
t
r
t
s
t
f
295
25
33.8
43.5
196
51.7
300 s; duty cycle
2%.
Max.
Unit
V
V
V
V
Conditions
I
C
= -100 A
I
C
= -10mA
(*)
I
E
= -100 A
I
E
= -100 A
(*)
V
CB
= -12V
V
CB
= -12V, T
amb
= 100°C
V
EB
= -5.6V
I
C
= -1A, I
B
= -100mA
(*)
I
C
= -1A, I
B
= -10mA
(*)
I
C
= -2A, I
B
= -40mA
(*)
I
C
= -4A, I
B
= -200mA
(*)
I
C
= -5A, I
B
= -500mA
(*)
I
C
= -4A, I
B
= -200mA
(*)
I
C
= -4A, V
CE
= -2V
(*)
I
C
= -10mA, V
CE
= -2V
(*)
I
C
= -1A, V
CE
= -2V
(*)
I
C
= -4A, V
CE
= -2V
(*)
I
C
= -10A, V
CE
= -2V
(*)
-50
-20
-50
-55
-150
-175
-210
-220
-1050
-900
900
nA
A
nA
mV
mV
mV
mV
mV
mV
mV
Static forward current transfer h
FE
ratio
MHz I
C
= -50mA, V
CE
= -10V
f = 100MHz
30
pF
ns
ns
ns
ns
V
CB
= -10V, f = 1MHz
(*)
V
CC
= -15V.
I
C
= -750mA,
I
B1
= I
B2
= -15mA
NOTES:
(*) Measured under pulsed conditions. Pulse width
Issue 1 - June 2006
© Zetex Semiconductors plc 2006
4
www.zetex.com
ZXTP25015DFH
Typical characteristics
Issue 1 - June 2006
© Zetex Semiconductors plc 2006
5
www.zetex.com