ZLLS500
40V SILICON HIGH CURRENT LOW LEAKAGE SCHOTTKY DIODE
SUMMARY
Schottky Diode V
R
= 40V; I
F
= 0.7A; I
R
= 10 A
DESCRIPTION
This compact SOT23 packaged Schottky diode offers users an excellent performance
combination comprising high current operation, extremely low leakage and low forward
voltage ensuring suitability for applications requiring efficient operation at higher
temperatures (above 85 C) see Operational efficiency chart on page 4.
Key benefits:
Performance capability equivalent to much larger packages
Improved circuit efficiency & power levels
PCB area savings
FEATURES
•
Extremely low leakage (10 A @30V)
•
High current capability (I
F
= 0.7A)
•
Low V
F
, fast switching Schottky
•
SOT23 package
•
ZLLS500 complements low temperature equivalent ZHCS500
•
Package thermally rated to 150 C
APPLICATIONS
•
DC - DC converters
•
Strobes
•
Mobile phones
•
Charging circuits
•
Motor control
ORDERING INFORMATION
DEVICE
REEL
(inches)
TAPE WIDTH
(mm)
8mm embossed
8mm embossed
QUANTITY
PER REEL
3000 units
10000 units
ZLLS500TA 7
ZLLS500TC 13
DEVICE MARKING
L05
Top view
ISSUE 3 - MAY 2006
1
SEMICONDUCTORS
ZLLS500
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Schottky Diode
Continuous reverse voltage
Forward current
Peak repetitive forward current
Rectangular pulse duty cycle
Non repetitive forward current
Package
Power dissipation at T
amb
=25 C
single die continuous
single die measured at t<5 secs
Storage temperature range
Junction temperature
T
stg
Tj
SYMBOL
VALUE
UNIT
V
R
I
F
I
FPK
t= 100 s
t= 10ms
I
FSM
40
0.7
1.14
13
3.2
V
A
A
A
A
P
D
500
630
-55 to +150
150
mW
mW
C
C
THERMAL RESISTANCE
PARAMETER
Junction to ambient (a)
Junction to ambient (b)
SYMBOL
R
R
JA
JA
VALUE
250
198
UNIT
°C/W
°C/W
Notes
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions.
(b) For a device surface mounted on FR4 PCB measured at t<5secs.
ISSUE 3 - MAY 2006
SEMICONDUCTORS
2
ZLLS500
TYPICAL CHARACTERISTICS
ISSUE 3 - MAY 2006
3
SEMICONDUCTORS
ZLLS500
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
SCHOTTKY DIODE CHARACTERISTICS
PARAMETER
Reverse breakdown voltage
Forward voltage
SYMBOL MIN.
V
(BR)R
V
F
40
305
335
395
465
550
620
710
415
Reverse current
Diode capacitance
Reverse recovery time
Reverse recovery charge
I
R
C
D
t
rr
Q
rr
6
370
16
3
210
10
360
390
450
530
630
710
800
TYP.
MAX.
UNIT
V
mV
mV
mV
mV
mV
mV
mV
mV
A
A
pF
ns
pC
CONDITIONS
I
R
=200µA
I
F
=50 mA*
I
F
=100 mA*
I
F
=250mA*
I
F
=500mA*
I
F
=750mA*
I
F
=1A*
I
F
=1.5A*
I
F
=500mA*,Ta = 100 C
V
R
=30V
V
R
=30V,Ta = 85 C
f=1MHz,V
R
=30V
Switched from
I
F
= 500mA to V
R
= 5.5V
Measured @ I
R
50mA.
di /d t = 500mA/ ns.
Rsource = 6 ;Rload= 10
*Measured under pulsed conditions. Pulse width = 300µS. Duty cycle
2%.
Operational efficiency chart
The operational efficiency chart indicates the beneficial use of the ZLLS series diodes in applications requiring
higher voltage, higher temperature operation. Circuits requiring low voltage low temperature operation will
benefit from using Zetex low V
F
ZHCS series diodes.
ISSUE 3 - MAY 2006
SEMICONDUCTORS
4
ZLLS500
TYPICAL CHARACTERISTICS
ISSUE 3 - MAY 2006
5
SEMICONDUCTORS
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