ZNI1000
TEMPERATURE SENSOR
DESCRIPTION
The ZNI1000 is a Ni thin film Resistance Temperature
Detector (RTD), specified to DIN 43760. The high
temperature coefficient offers higher signal outputs
than other RTD’s, which results in higher accuracy with
smaller temperature changes.
FEATURES
•
Resistance at 0 C: 1000
•
SOT23 package
•
Available on 8mm tape
SOT23
APPLICATIONS
•
Automotive electronic
•
Circuit protection
•
Temperature compensation
•
Temperature measurement
PINOUT
ORDERING INFORMATION
DEVICE
ZNI1000TA
ZNI1000TC
REEL
SIZE
7”
13”
TAPE
WIDTH
8mm
8mm
QUANTITY
PER REEL
3,000 units
10,000 units
Top View
DEVICE MARKING
•
ZNI
Pin 1 - Ni1000
Pin 2 - Ni1000
Pin 3 - need a good thermal
contact for a short response
time
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SEMICONDUCTORS
ZNI1000
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Continuous current
Total power dissipation
Operating temperature range
Storage temperature range
SYMBOL
I
CC
P
TOT
T
amb
T
stg
LIMIT
4
20
-55 to +150
-55 to +150
UNIT
mA
mW
°C
°C
ELECTRICAL CHARACTERISTICS
PARAMETER
Resistance 0°C
Resistance 100°C
Tolerance class B
Tolerance class B
SYMBOL
R
0
R
100
MIN
-
-
-
-
TYP
1000
1618
(0.4+0.028 x T )
(0.4+0.007 x T )
MAX
-
-
-
-
UNIT
CONDITIONS
T=0 C, I<1mA
T=100 C, I<1mA
-55 to 0°C
0 to 150°C
CHARACTERISTICS ACCORDING TO DIN43760
Resistance at a given temperature
R0
Resistance at 0 C
B
6.650 x 10
-6
T
Temperature in C
C
2.805 x 10
-11
A
5.485*10
-3
D
-2.000 x 10
-17
2
4
R(T) = R0 x (1 + A x T + B x T + C x T + D x T
6
)
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SEMICONDUCTORS
2
ZNI1000
Formula for temperature at a given resistance:
T
(
R
)
=
a
+
bR
+
cR
2
+
dR
3
coefficients:
a.= -232.2
b.= 0.290
c.= -66.65 x 10
-6
d.= -8.85 * 10
-9
Tolerances:
Class B
+/- (0,4 + 0,007 *|T|) in range from 0 to 150°C
+/- (0,4 + 0,028 *|T|) in range from -55 to 0°C
R
0
= 1000 Ohm at 0°C
operating -55 to +150°C
storage -55 to +150°C
R = 0,1 % after 1000 h at 150°C
typ. 1,2 mA; max. 5 mA
Specification:
Temperature range:
Long Term stability:
Measurement Current (DC):
Self heating
For accurate temperature measurement it's recommended to choose a small current in order to avoid self heating
of the resistor. The temperature failure caused by the measurement current can be calculated with:
T = P/EK
where P = I² * R is the heat power caused by the measurement current and EK is the self heating coefficient.
The self heating coefficient for the Ni1000-SOT is EW=(1,7 ± 0,3) mW/K (Air: 23°C; no air flow)
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SEMICONDUCTORS
ZNI1000
Issue 4 - April 2006
SEMICONDUCTORS
4
ZNI1000
PACKAGE OUTLINE
PAD LAYOUT
CONTROLLING DIMENSIONS IN MILLIMETERS APPROX CONVERSIONS INCHES
PACKAGE DIMENSIONS
Millimeters
DIM
A
B
C
D
F
G
0.37
0.085
Min
2.67
1.20
Max
3.05
1.40
1.10
0.53
0.15
0.015
0.0034
Inches
Min
0.105
0.047
Max
0.120
0.055
0.043
0.021
0.0059
DIM
H
K
L
M
N
Millimeters
Min
0.33
0.01
2.10
0.45
Max
0.51
0.10
2.50
0.64
Inches
Max
0.013
0.0004
0.083
0.018
Max
0.020
0.004
0.0985
0.025
0.95 NOM
0.0375 NOM
1.90 NOM
0.075 NOM
© Zetex Semiconductors plc 2005
Europe
Zetex GmbH
Streitfeldstraße 19
D-81673 München
Germany
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
europe.sales@zetex.com
Americas
Zetex Inc
700 Veterans Memorial Hwy
Hauppauge, NY 11788
USA
Telephone: (1) 631 360 2222
Fax: (1) 631 360 8222
usa.sales@zetex.com
Asia Pacific
Zetex (Asia) Ltd
3701-04 Metroplaza Tower 1
Hing Fong Road, Kwai Fong
Hong Kong
Telephone: (852) 26100 611
Fax: (852) 24250 494
asia.sales@zetex.com
Corporate Headquarters
Zetex Semiconductors plc
Zetex Technology Park
Chadderton, Oldham, OL9 9LL
United Kingdom
Telephone (44) 161 622 4444
Fax: (44) 161 622 4446
hq@zetex.com
These offices are supported by agents and distributors in major countries world-wide.
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced
for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company
reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
For the latest product information, log on to www.zetex.com
Issue 4 - April 2006
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SEMICONDUCTORS
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