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5962-9561323HYC

Description
Standard SRAM, 512KX8, 20ns, CMOS, CDIP32, 0.600 INCH, CERAMIC, DIP-32
Categorystorage    storage   
File Size136KB,17 Pages
ManufacturerMicross
Websitehttps://www.micross.com
Download Datasheet Parametric View All

5962-9561323HYC Overview

Standard SRAM, 512KX8, 20ns, CMOS, CDIP32, 0.600 INCH, CERAMIC, DIP-32

5962-9561323HYC Parametric

Parameter NameAttribute value
MakerMicross
Parts packaging codeDIP
package instructionDIP, DIP32,.6
Contacts32
Reach Compliance Codecompliant
ECCN code3A001.A.2.C
Maximum access time20 ns
I/O typeCOMMON
JESD-30 codeR-CDIP-T32
JESD-609 codee4
length41.525 mm
memory density4194304 bit
Memory IC TypeSTANDARD SRAM
memory width8
Number of functions1
Number of terminals32
word count524288 words
character code512000
Operating modeASYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
organize512KX8
Output characteristics3-STATE
Package body materialCERAMIC, METAL-SEALED COFIRED
encapsulated codeDIP
Encapsulate equivalent codeDIP32,.6
Package shapeRECTANGULAR
Package formIN-LINE
Parallel/SerialPARALLEL
power supply5 V
Certification statusNot Qualified
Filter levelMIL-STD-883
Maximum seat height7.493 mm
Maximum standby current0.0026 A
Minimum standby current2 V
Maximum slew rate0.16 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountNO
technologyCMOS
Temperature levelMILITARY
Terminal surfaceGOLD
Terminal formTHROUGH-HOLE
Terminal pitch2.54 mm
Terminal locationDUAL
width15.24 mm
Base Number Matches1
SRAM
AS5C4008
512K x 8 SRAM
SRAM MEMORY ARRAY
AVAILABLE AS MILITARY
SPECIFICATION
• SMD 5962-95600
• SMD 5962-95613
• MIL STD-883
PIN ASSIGNMENT
(Top View)
32-Pin DIP (CW), 32-Pin LCC (EC)
32-Pin SOJ (ECJ)
A18
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
Vss
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
Vcc
A15
A17
WE\
A13
A8
A9
A11
OE\
A10
CE\
I/O7
I/O6
I/O5
I/O4
I/O3
FEATURES
High Speed: 12, 15, 17, 20, 25, 35 and 45ns
High-performance, low power military grade device
Single +5V ±10% power supply
Easy memory expansion with CE\ and OE\ options
All inputs and outputs are TTL-compatible
Ease of upgradability from 1 Meg using the 32 pin
evolutionary version.
OPTIONS
Timing
12ns access
15ns access
17ns access
20ns access
25ns access
35ns access
45ns access
Operating Temperature Range
Military: -55
o
C to +125
o
C
Industrial: -40
o
C to +85
o
C
Packages
Ceramic Dip (600 mil)
Ceramic Flatpack
Ceramic LCC
Ceramic SOJ
• Options
2V data retention/ low power
MARKING
-12
-15
-17
-20
-25
-35
-45
XT
IT
CW
F
EC
ECJ
L
No. 112
No. 304
No. 209
No. 502
32-Pin Flat Pack (F)
A18
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
Vss
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
Vcc
A15
A17
WE\
A13
A8
A9
A11
OE\
A10
CE\
I/O7
I/O6
I/O5
I/O4
I/O3
NOTE:
Not all combinations of operating temperature, speed, data retention and
low power are necessarily available. Please contact factory for availability of specific
part number combinations.
GENERAL DESCRIPTION
The AS5C4008 is a 4 megabit monolithic CMOS SRAM, orga-
nized as a 512K x 8.
The evolutionary 32 pin device allows for easy upgrades from
the 1 meg SRAM.
For flexibility in high-speed memory applications, Micross of-
fers chip enable (CE\) and output enable (OE\) capabilities. These
enhancements can place the outputs in High-Z for additional flexibility
in system design.
Writing to these devices is accomplished when write enable
(WE\) and CE\ inputs are both LOW. Reading is accomplished when
WE\ remains HIGH and CE\ and OE\ go LOW. This allows systems
designers to meet low standby power requirements.
All devices operate from a single +5V power supply and all inputs
are fully TTL-Compatible.
AS5C4008
Rev. 6.4 01/10
For more products and information
please visit our web site at
www.micross.com
Micross Components reserves the right to change products or specifications without notice.
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