BCX 71
ISSUE 3 – MARCH 2005
PARTMA RKING DETAIL –
MAX.
V
V
-20
-20
µ
A
SOT23 PNP SILICON PLANAR
SMALL SIGNAL TRANSISTORS
BCX71
E
ELECTRI CAL CHA RACTE RI STI CS ( at T
am b
= 25° C unless other w ise st at ed).
UN IT
I
CE O
=-2mA
I
EBO
=-1
µ
A
V
CE S
=-45V
V
CE S
=-45V ,T
amb
=150
o
C
V
I
C
=-10m A,I
B
= -0.25m A
I
C
=-50m A, I
B
=-1.25m A
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitte r-Base Voltage
Continuous Collector Current
Base Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
V
CEO
V
EBO
I
C
I
B
P
TOT
T
j
:T
stg
+V
BB
EBO
=-4V
PARAM ETER
SYM BO L
MIN.
TYP.
CO NDI TIONS.
C
B
Colle ctor-E mitter
Br eak down Vo ltage
V
(B R)CEO
-45
Emitter-Base
Br eak down Vo ltage
nA
V
(BR) EB O
-5
Colle ctor-E mitter C ut-off
Cu rrent
-20
-0.25
-0.55
V
CES
-0.85
-1.05
-0.75
V
V
V
I
C
=-10
µ
A, V
CE
=-5V
I
C
=-2mA, V
CE
=-5V
I
C
=-50m A, V
CE
=-1V
I
C
=-10
µ
A, V
CE
=-5V
I
C
=-2mA, V
CE
=-5V
I
C
=-50m A, V
CE
=-1V
I
C
=-10
µ
A, V
CE
=-5V
I
C
=-2mA, V
CE
=-5V
I
C
=-50m A, V
CE
=-1V
V
V
I
C
=-10m A, I
B
=-0.25m A
I
C
=-50m A, I
B
=-1.25m A
V
V
SYMBOL
nA
I
CES
BCX71G – BG
BCX71H – BH
BCX71J – BJ
BCX71K – BK
BCX71GR – CG
BCX71HR – 6P
BCX71JR – J8
BCX71KR – CK
SOT23
VALUE
-45
-45
-5
-200
-50
330
-55 to +150
V
CC
(-10V)
Emitter-Base C ut-Off C urrent
I
EBO
ABSOLUTE MA XIMU M RATINGS.
Colle ctor-E mitter
Sat uration Vol tage
V
CE( sa t)
-0.12
-0.25
UNIT
V
V
V
mA
mA
mW
°C
Bas e-Emitter
Sat uration Vol tage
V
BE( sa t)
-0.60
-0.68
-0.70
-0.80
Base - E mitter V oltage
V
BE
-0.6
-0.55
-0.65
-0.72
220
St atic
For ward
Cu rrent
Tr ansfer
Rat io
310
BCX 71G
h
FE
120
60
140
170
BCX71H
30
180
80
200
250
SW ITCHI NG CI RCUI T
BCX71J
460
40
250
100
630
MHz
pF
6
6
dB
I
C
=- 0. 2mA, V
CE
=- 5V
R
G
=2K
Ω,
f=1K Hz
∆
f=200H z
pF
V
CB O
= - 10V, f =1MHz
V
EBO
= -0.5V,f =1MHz
I
C
=-10m A, V
CE
= -5V
f = 100M Hz
270
350
I
C
=-10
µ
A, V
CE
=-5V
I
C
=-2mA, V
CE
=-5V
I
C
=-50m A, V
CE
=-1V
I
C
=-10
µ
A, V
CE
=-5V
I
C
=-2mA, V
CE
=-5V
I
C
=-50m A, V
CE
=-1V
R
2
1
µ
s
-10V
50
Ω
R
1
R
L
BCX71K
100
380
110
340
500
Tr ansition Fr equen cy
f
T
180
Emitter-Base C apacita nce
C
ebo
11
t
r
<5nsec
Mark/S pace ra tio < 0.01
Z
S
= 50
Ω
BAY63
t
r
< 5nsec
Z
in
>100k
Ω
Oscilloscope
Col lector-Bas e Cap acitance
C
cbo
Noise Fi gure
N
2
FOUR TERMINAL NETWORK DATA (I
C
=2mA, V
CE
=5V, f=1kHz)
J
S witching tim es:
Del ay T ime
Ri se Ti me
Tu rn-on T ime
St orage Ti me
Fall T ime
Turn-Off T ime
150
800
ns
ns
ns
ns
ns
ns
t
d
t
r
t
on
t
s
t
f
t
off
35
50
85
400
80
480
-I
C
: I
B1
: - I
B2
=10:1:1mA
R
1
=R
2
=5K
Ω
V
BB
=-3.6V, R
L
=990
Ω
* Measured un der pu lsed co nditions. Pulse w idth=300
µ
s. Duty cy cle
h
11e
h
12e
h
21e
h
22e
h
FE
Group G
h
FE
Group F
h
FE
Group
Min. Typ. Max. Min. Typ Max. Min. Typ
1.6
2.7
4.5
2.5
3.6
6.0
3.2
4.5
1.5
2
2
200
260
330
18
30
24
50
30
h
FE
Group K
Max. Min. Typ Max.
8.5
4.5
7.5
12
K
3
10
-4
520
60
50
100
µ
s
Spic e param eter data is available up on reques t for th is dev ice
BCX71
ISSUE 2 FEBRUARY 95
PARTMARKING DETAIL
MAX.
C
B
UNIT
CONDITIONS.
E
SOT23 PNP SILICON PLANAR
SMALL SIGNAL TRANSISTORS
BCX71
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
V
V
I
EBO
=-1
µ
A
V
CES
=-45V
V
CES
=-45V ,T
amb
=150
o
C
V
EBO
=-4V
I
C
=-10mA,I
B
= -0.25mA
I
C
=-50mA, I
B
=-1.25mA
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Base Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
V
CES
V
CEO
V
EBO
I
C
I
B
P
TOT
T
j
:T
stg
+V
BB
PARAMETER
SYMBOL
MIN.
TYP.
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
-45
I
CEO
=-2mA
Emitter-Base
Breakdown Voltage
-20
-20
µ
A
V
(BR)EBO
nA
-5
Collector-Emitter Cut-off
Current
-20
-0.25
-0.55
-0.85
-1.05
-0.75
220
310
460
630
MHz
pF
6
6
dB
I
C
=- 0.2mA, V
CE
=- 5V
R
G
=2K
Ω,
f=1KHz
∆
f=200Hz
pF
V
CBO
= -10V, f =1MHz
V
EBO
= -0.5V,f =1MHz
I
C
=-10mA, V
CE
= -5V
f = 100MHz
V
V
V
I
C
=-10
µ
A, V
CE
=-5V
I
C
=-2mA, V
CE
=-5V
I
C
=-50mA, V
CE
=-1V
I
C
=-10
µ
A, V
CE
=-5V
I
C
=-2mA, V
CE
=-5V
I
C
=-50mA, V
CE
=-1V
I
C
=-10
µ
A, V
CE
=-5V
I
C
=-2mA, V
CE
=-5V
I
C
=-50mA, V
CE
=-1V
V
V
I
C
=-10mA, I
B
=-0.25mA
I
C
=-50mA, I
B
=-1.25mA
V
V
SYMBOL
nA
I
CES
BCX71G BG
BCX71H BH
BCX71J BJ
BCX71K BK
BCX71GR CG
BCX71HR 6P
BCX71JR J8
BCX71KR CK
SOT23
VALUE
-45
-45
-5
-200
-50
330
-55 to +150
V
CC
(-10V)
Emitter-Base Cut-Off Current
I
EBO
ABSOLUTE MAXIMUM RATINGS.
Collector-Emitter
Saturation Voltage
V
CE(sat)
-0.12
-0.25
UNIT
V
V
V
mA
mA
mW
°C
Base-Emitter
Saturation Voltage
V
BE(sat)
-0.60
-0.68
-0.70
-0.80
Base - Emitter Voltage
V
BE
-0.6
-0.55
-0.65
-0.72
Static
Forward
Current
Transfer
Ratio
BCX71G
h
FE
120
60
140
170
BCX71H
30
180
80
200
250
SWITCHING CIRCUIT
BCX71J
40
250
100
I
C
=-10
µ
A, V
CE
=-5V
I
C
=-2mA, V
CE
=-5V
I
C
=-50mA, V
CE
=-1V
I
C
=-10
µ
A, V
CE
=-5V
I
C
=-2mA, V
CE
=-5V
I
C
=-50mA, V
CE
=-1V
270
350
R
2
1
µ
s
-10V
50
Ω
R
1
R
L
BCX71K
100
380
110
340
500
Transition Frequency
f
T
180
Emitter-Base Capacitance
C
ebo
11
t
r
<5nsec
Mark/Space ratio < 0.01
Z
S
= 50
Ω
BAY63
Collector-Base Capacitance
C
cbo
t
r
< 5nsec
Z
in
>100k
Ω
Oscilloscope
Noise Figure
N
2
FOUR TERMINAL NETWORK DATA (I
C
=2mA, V
CE
=5V, f=1kHz)
Switching times:
Delay Time
Rise Time
Turn-on Time
Storage Time
Fall Time
Turn-Off Time
150
800
ns
ns
ns
ns
ns
ns
t
d
t
r
t
on
t
s
t
f
t
off
35
50
85
400
80
480
-I
C
: I
B1
: - I
B2
=10:1:1mA
R
1
=R
2
=5K
Ω
V
BB
=-3.6V, R
L
=990
Ω
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
h
11e
h
12e
h
21e
h
22e
h
FE
Group G
h
FE
Group F
h
FE
Group J
h
FE
Group K
Min. Typ. Max. Min. Typ Max. Min. Typ Max. Min. Typ Max.
1.6
2.7
4.5
2.5
3.6
6.0
3.2
4.5
8.5
4.5
7.5
12
K
1.5
2
2
3
10
-4
200
260
330
520
18
30
24
50
30
60
50
100
µ
s
Spice parameter data is available upon request for this device
PAGE NO
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