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BCW89

Description
100 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size170KB,2 Pages
ManufacturerZetex Semiconductors
Websitehttp://www.zetex.com/
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BCW89 Overview

100 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR

BCW89 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage60 V
ConfigurationSINGLE
Minimum DC current gain (hFE)120
JESD-30 codeR-PDSO-G3
JESD-609 codee0
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typePNP
Maximum power dissipation(Abs)0.35 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationDUAL
Transistor component materialsSILICON
Nominal transition frequency (fT)150 MHz
Base Number Matches1
SOT23 PNP PLANAR
SMALL SIGNAL TRANSISTORS
BCW89
C
B
E
ISSUE 2 – FEBRUARY 1995
PARTMARKING DETAILS –
DIM
Min
A
B
C
D
F
0.085
0.15
0.0033
0.0059
0.37
0.53
0.0145
0.021
–
1.10
–
0.043
1.20
1.40
0.047
0.055
2.67
3.05
0.105
0.120
Max
Min
Max
Millimeters
Inches
BCW89
BCW89R
– H3
– H6
C
E
B
SOT23
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage (I
C
=-2mA)
Emitter-Base Voltage
Collector Current
Peak Collector Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
PARAMETER
Collector-Base Cut-Off
Current
Base-Emitter Voltage
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Static Forward Current
Transfer Ratio
Transition Frequency
Collector Capacitance
Noise Figure
SYMBOL MIN.
I
CBO
V
BE
V
CE(sat)
V
BE(sat)
h
FE
f
T
C
TC
N
-600
-80
-150
-720
-810
120
90
150
7
10
260
MHz
pF
dB
SYMBOL
V
CBO
V
CES
V
CEO
V
EBO
I
C
I
CM
P
tot
T
j
:T
stg
TYP.
VALUE
-80
-60
-60
-5
-100
-200
330
-55 to +150
MAX. UNIT CONDITIONS.
-100
-10
-750
-300
µ
A
UNIT
V
V
V
V
mA
mA
mW
°C
G
K
L
N
NOM 0.95
NOM 0.37
2.10
2.50
0.0825
0.0985
0.01
0.10
0.0004
0.004
NOM 1.9
NOM 0.075
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
nA
mV
mV
mV
mV
mV
I
E
=0, V
CB
=-20V
I
E
=0, V
CB
=-20V, T
j
=100°C
I
C
=-2.0mA, V
CE
=-5.0V
I
C
=-10mA, I
B
=-0.5mA
I
C
=-50mA, I
B
=-2.5mA
I
C
=-10mA, I
B
=-0.5mA
I
C
=-50mA, I
B
=-2.5mA
I
C
=-10
µ
A, V
CE
=-5.0V
I
C
=-2.0mA, V
CE
=-5.0V
I
C
=-10mA, V
CE
=-5.0V
f =35MHz
I
E
=I
e
=0, V
CB
=-10V
f =1MHz
I
C
=-200
µ
A, V
CE
=-5.0V
R
S
=2.0K
, f =1KHz
B =200Hz
Spice parameter data is available upon request for this device
PAGE NO
Zetex plc.
Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom.
Telephone: (44)161-627 5105 (Sales), (44)161-627 4963 (General Enquiries)
Facsimile: (44)161-627 5467
These are supported by
agents and distributors in
major countries world-wide
Zetex plc 1995
Zetex GmbH
Streitfeldstraße 19
D-81673 München
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
Zetex Inc.
87 Modular Avenue
Commack NY11725
Telephone: (516) 543-7100
Fax: (516) 864-7630
Zetex (Asia) Ltd.
3510 Metroplaza, Tower 2
Hing Fong Road, Kwai Fong
Telephone:(852) 26100 611
Fax: (852) 24250 494
©
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied
or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or
services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any
product or service.
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