BFN18 datasheet, PDF - EEWORLD Datasheet

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BFN18: DescriptionSOT89 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR; CategoryDiscrete semiconductor The transistor; File Size11KB，1 Pages; ManufacturerZetex Semiconductors; Websitehttp://www.zetex.com/

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BFN18 Overview

SOT89 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR

BFN18 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Zetex Semiconductors
package instruction	SMALL OUTLINE, R-PSSO-F3
Reach Compliance Code	unknow
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	0.2 A
Collector-emitter maximum voltage	300 V
Configuration	SINGLE
Minimum DC current gain (hFE)	30
JESD-30 code	R-PSSO-F3
JESD-609 code	e0
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
Maximum power dissipation(Abs)	1 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	FLAT
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	70 MHz
VCEsat-Max	0.5 V

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SOT89 NPN SILICON PLANAR

HIGH VOLTAGE TRANSISTOR

BFN18

C

ISSUE 3 - JANUARY 1996

COMPLEMENTARY TYPE - BFN19

PARTMARKING DETAIL - DE

7

E

C

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak pulse Current

Continuous Collector Current

Base Current

Power Dissipation at T

amb

=25°C

Operating and Storage Temperature Range

V

CEO

V

EBO

I

CM

I

C

I

B

P

tot

T

j

:T

stg

V

CBO

SYMBOL

VALUE

300

5

500

200

100

1

-65 to +150

B

UNIT

V

mA

W

°C

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C).

PARAMETER

Collector-Base

Breakdown Voltage

Collector-Emitter

Breakdown Voltage

Emitter-Base Breakdown

Voltage

Collector Cut-Off Current

Emitter Cut-Off Current

Collector-Emitter

Saturation Voltage

Base-Emitter

Saturation Voltage

Static Forward Current

Transfer Ratio

Transition

Frequency

Output Capacitance

SYMBOL

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

I

EBO

V

CE(sat)

V

BE(sat)

h

FE

25

40

30

f

T

C

obo

Typ.

70

Typ.

1.5

MHz

pF

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle

≤

2%

For typical characteristics graphs see FMMTA42 datasheet.

MIN.

300

5

100

20

100

0.5

0.9

MAX.

V

nA

µA

nA

V

UNIT CONDITIONS.

I

C

=100µA

I

C

=1mA*

I

E

=100µA

V

CB

=250V

V

CB

=250V, T

amb

=150°C

V

EB

=3V

I

C

=20mA, I

B

=2mA

I

C

=20mA, I

B

=2mA

I

C

=1mA, V

CE

=10V*

I

C

=10mA, V

CE

=10V*

I

C

=30mA, V

CE

=10V*

I

C

=20mA, V

CE

=10V

f=20MHz

V

CB

=30V,f=1MHz

3 - 44

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