BFN36 datasheet, PDF - EEWORLD Datasheet

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BFN36: DescriptionSOT223 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR; CategoryDiscrete semiconductor The transistor; File Size31KB，1 Pages; ManufacturerZetex Semiconductors; Websitehttp://www.zetex.com/

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BFN36 Overview

SOT223 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR

BFN36 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Zetex Semiconductors
package instruction	SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code	unknow
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	0.5 A
Collector-emitter maximum voltage	250 V
Configuration	SINGLE
Minimum DC current gain (hFE)	40
JESD-30 code	R-PDSO-G4
JESD-609 code	e0
Humidity sensitivity level	1
Number of components	1
Number of terminals	4
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
Maximum power consumption environment	1.5 W
Maximum power dissipation(Abs)	1.5 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	70 MHz

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SOT223 NPN SILICON PLANAR

HIGH VOLTAGE TRANSISTOR

BFN36

C

ISSUE 4 - JANUARY 1996

7

FEATURES:

* High V

CEO

and Low saturation voltage

APPLICATIONS:

* Suitable for video output stages in TV sets

* Switching power supplies

COMPLEMENTARY TYPE - BFN37

PARTMARKING DETAILS - BFN36

B

E

C

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Power Dissipation at T

amb

=25°C

Operating and Storage Temperature Range

V

CBO

V

CEO

V

EBO

I

C

P

tot

T

j

:T

stg

SYMBOL

VALUE

250

5

500

2

-55 to +150

UNIT

V

mA

W

°C

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C).

PARAMETER

Collector-Base

Breakdown Voltage

Collector-Emitter

Breakdown Voltage

Emitter-Base

Breakdown Voltage

Collector Cut-Off

Current

Emitter Cut-Off

Current

Collector-Emitter

Saturation Voltage

Base-Emitter

Saturation Voltage

SYMBOL

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

I

EBO

V

CE(sat)

V

BE(sat)

Static Forward Current h

FE

Transfer Ratio

Transition

Frequency

Output Capacitance

f

T

Cobo

25

40

70

1.5

MHz

pF

*Measured under pulsed conditions. Pulse width=300

µ

s. Duty cycle

≤

2%

For typical characteristics graphs see FMMTA42 datasheet.

3 - 46

MIN.

250

5

100

20

100

0.4

0.9

TYP.

MAX.

V

nA

µ

A

UNIT CONDITIONS.

I

C

=100

µ

A

I

C

=1mA

I

E

=100

µ

A

V

CB

=200V

V

CB

=200V, T

amb

=150°C

nA

V

EB

=4V

I

C

=20mA, I

B

=2mA

I

C

=20mA, I

B

=2mA

I

C

=1mA, V

CE

=10V*

I

C

=10mA, V

CE

=10V*

I

C

=30mA, V

CE

=10V*

I

C

=20mA, V

CE

=10V

f=100MHz

V

CB

=30V,f=1MHz

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Shortcut: S0 S1 S2 S3 S4 S5 S6 S7 S8 S9 SA SB SC SD SE SF SG SH SI SJ SK SL SM SN SO SP SQ SR SS ST SU SV SW SX SY SZ T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 TA TB TC TD TE TF TG TH TI TJ TK TL TM TN TO TP TQ TR TS TT TU TV TW TX TY TZ U0 U1 U2 U3 U4 U6 U7 U8 UA UB UC UD UE UF UG UH UI UJ UK UL UM UN UP UQ UR US UT UU UV UW UX UZ V0 V1 V2 V3 V4 V5 V6 V7 V8 V9 VA VB VC VD VE VF VG VH VI VJ VK VL VM VN VO VP VQ VR VS VT VU VV VW VX VY VZ W0 W1 W2 W3 W4 W5 W6 W7 W8 W9 WA WB WC WD WE WF WG WH WI WJ WK WL WM WN WO WP WR WS WT WU WV WW WY X0 X1 X2 X3 X4 X5 X7 X8 X9 XA XB XC XD XE XF XG XH XK XL XM XN XO XP XQ XR XS XT XU XV XW XX XY XZ Y0 Y1 Y2 Y4 Y5 Y6 Y9 YA YB YC YD YE YF YG YH YK YL YM YN YP YQ YR YS YT YX Z0 Z1 Z2 Z3 Z4 Z5 Z6 Z8 ZA ZB ZC ZD ZE ZF ZG ZH ZJ ZL ZM ZN ZP ZR ZS ZT ZU ZV ZW ZX ZY

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