BFN38 datasheet, PDF - EEWORLD Datasheet

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BFN38: DescriptionSOT223 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR; CategoryDiscrete semiconductor The transistor; File Size32KB，1 Pages; ManufacturerZetex Semiconductors; Websitehttp://www.zetex.com/

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BFN38 Overview

SOT223 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR

BFN38 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Zetex Semiconductors
package instruction	SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code	unknow
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	0.5 A
Collector-emitter maximum voltage	300 V
Configuration	SINGLE
Minimum DC current gain (hFE)	30
JESD-30 code	R-PDSO-G4
JESD-609 code	e0
Humidity sensitivity level	1
Number of components	1
Number of terminals	4
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
Maximum power consumption environment	1.5 W
Maximum power dissipation(Abs)	1.5 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	70 MHz

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SOT223 NPN SILICON PLANAR

HIGH VOLTAGE TRANSISTOR

BFN38

ISSUE 4 - JANUARY 1996

FEATURES:

* High V

CEO

and Low saturation voltage

APPLICATIONS:

* Suitable for video output stages in TV sets

* Switching power supplies

COMPLEMENTARY TYPE - BFN39

PARTMARKING DETAILS - BFN38

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Power Dissipation at T

amb

=25°C

Operating and Storage Temperature Range

CBO

CEO

EBO

tot

stg

SYMBOL

VALUE

300

500

-55 to +150

UNIT

°C

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C).

PARAMETER

Collector-Base

Breakdown Voltage

Collector-Emitter

Breakdown Voltage

Emitter-Base

Breakdown Voltage

Collector Cut-Off

Current

Emitter Cut-Off

Current

Collector-Emitter

Saturation Voltage

Base-Emitter

Saturation Voltage

SYMBOL

(BR)CBO

(BR)CEO

(BR)EBO

CBO

EBO

CE(sat)

BE(sat)

Static Forward Current h

Transfer Ratio

Transition

Frequency

Output Capacitance

Cobo

1.5

MHz

*Measured under pulsed conditions. Pulse width=300

s. Duty cycle

≤

For typical characteristics graphs see FMMTA42 datasheet.

3 - 48

MIN.

300

100

0.5

0.9

TYP.

MAX.

UNIT CONDITIONS.

=100

=1mA

=100

=250V

=250V, T

amb

=150°C

=4V

=20mA, I

=2mA

=20mA, I

=2mA

=1mA, V

=10V*

=10mA, V

=10V*

=30mA, V

=10V*

=20mA, V

=10V

f=100MHz

=30V,f=1MHz

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