BSP41 datasheet, PDF - EEWORLD Datasheet

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BSP41: DescriptionSOT223 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS; CategoryDiscrete semiconductor The transistor; File Size33KB，1 Pages; ManufacturerZetex Semiconductors; Websitehttp://www.zetex.com/

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BSP41 Overview

SOT223 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS

BSP41 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Zetex Semiconductors
package instruction	SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code	unknow
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	1 A
Collector-based maximum capacity	12 pF
Collector-emitter maximum voltage	60 V
Configuration	SINGLE
Minimum DC current gain (hFE)	50
JESD-30 code	R-PDSO-G4
JESD-609 code	e0
Humidity sensitivity level	1
Number of components	1
Number of terminals	4
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
Maximum power dissipation(Abs)	1.5 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	100 MHz
Maximum off time (toff)	1000 ns
Maximum opening time (tons)	250 ns
VCEsat-Max	0.5 V

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SOT223 NPN SILICON PLANAR

MEDIUM POWER TRANSISTORS

ISSUE 3 NOVEMBER 1995

7

BSP41 - BSP31

PARTMARKING DETAIL

DEVICE TYPE IN FULL

C

B

E

BSP43 - BSP33

C

COMPLEMENTARY TYPES

BSP41

BSP43

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

Continuous Collector Current

Base Current

Power Dissipation at T

amb

=25°C

Operating and Storage Temperature Range

PARAMETER

Collector-Base

BSP43

Breakdown Voltage BSP41

Collector-Emitter

BSP43

Breakdown Voltage BSP41

Emitter-Base Breakdown Voltage

Collector Cut-Off Current

Collector-Emitter

Saturation Voltage

Base-Emitter

Saturation Voltage

Static Forward

Current Transfer Ratio

Collector Capacitance

Emitter Capacitance

Transition Frequency

Turn-On Time

Turn-Off Time

SYMBOL

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

V

CE(sat)

V

BE(sat)

h

FE

C

c

C

e

f

T

on

T

off

100

250

1000

30

100

50

I

C

I

B

P

TOT

T

j

:T

stg

MIN.

90

70

80

60

5

100

50

0.25

0.5

1.0

1.2

300

12

90

pF

MHz

ns

*Measured under pulsed conditions. Pulse width=300

µ

s. Duty cycle

≤

2%

For typical characteristics graphs see FMMT493 datasheet.

3 - 64

MAX.

V

EBO

I

CM

V

CEO

V

CBO

SYMBOL

BSP41

70

60

5

2

1

100

2

-55 to +150

UNIT

V

µ

A

BSP43

90

80

UNIT

V

A

mA

W

°C

CONDITIONS.

I

C

=100

µ

A

I

C

=10mA *

I

E

=10

µ

A

nA

V

CB

=60V

V

CB

=60V, Tamb =125°C

I

C

=150mA, I

B

=15mA

I

C

=500mA, I

B

=50mA

I

C

=150mA, I

B

=15mA

I

C

=500mA, I

B

=50mA

I

C

=100

µ

A, V

CE

=5V

I

C

=100mA, V

CE

=5V

I

C

=500mA, V

CE

=5V

V

CB

=10V, f=1MHz

V

EB

=0.5V, f=1MHz

I

C

=50mA, V

CE

=10V

f =35MHz

V

CC

=20V, I

C

=100mA

I

B1

=I

B2

=5mA

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

BSP41 Related Products

	BSP41	BSP43
Description	SOT223 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS	SOT223 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS
Is it Rohs certified?	incompatible	incompatible
Maker	Zetex Semiconductors	Zetex Semiconductors
package instruction	SMALL OUTLINE, R-PDSO-G4	SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code	unknow	unknow
ECCN code	EAR99	EAR99
Shell connection	COLLECTOR	COLLECTOR
Maximum collector current (IC)	1 A	1 A
Collector-based maximum capacity	12 pF	12 pF
Collector-emitter maximum voltage	60 V	80 V
Configuration	SINGLE	SINGLE
Minimum DC current gain (hFE)	50	50
JESD-30 code	R-PDSO-G4	R-PDSO-G4
JESD-609 code	e0	e0
Humidity sensitivity level	1	1
Number of components	1	1
Number of terminals	4	4
Maximum operating temperature	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	NPN	NPN
Maximum power dissipation(Abs)	1.5 W	1.5 W
Certification status	Not Qualified	Not Qualified
surface mount	YES	YES
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	GULL WING	GULL WING
Terminal location	DUAL	DUAL
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	100 MHz	100 MHz
Maximum off time (toff)	1000 ns	1000 ns
Maximum opening time (tons)	250 ns	250 ns
VCEsat-Max	0.5 V	0.5 V

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