BSP75N
60V self-protected low-side Intellifet
TM
MOSFET switch
Summary
Continuous drain source voltage
On-state resistance
Minimum nominal load current
(c)
Clamping energy
V
DS
=60V
500m
SOT223
Maximum nominal load current
(a)
1.1A (V
IN
= 5V)
0.7A (V
IN
= 5V)
550mJ
Description
Self-protected low side MOSFET. Monolithic over temperature, over
current, over voltage (active clamp) and ESD protected logic level
functionality. Intended as a general purpose switch.
S
S
D
IN
Features
•
•
•
•
•
•
•
•
Short circuit protection with auto restart
Over-voltage protection (active clamp)
Thermal shutdown with auto restart
Over-current protection
Input protection (ESD)
High continuous current rating
Note:
The tab is connected to the source pin and must
be electrically isolated from the drain pin.
Connection of significant copper to the drain pin
is recommended for best thermal performance.
Load dump protection (actively protects load)
Logic level input
Ordering information
Device
BSP75NTA
Reel size
(inches)
7
Tape width
(mm)
12mm embossed
Quantity per reel
1000
Device marking
BSP75N
Issue 4 - September 2006
© Zetex Semiconductors plc 2006
1
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BSP75N
Functional block diagram
D
Over voltage
protection
IN
Over current
protection
Logic
Over temperature
protection
dV/dt
limitation
Human body
ESD protection
S
Applications
•
•
•
•
•
Especially suited for loads with a high in-rush current such as lamps and motors.
All types of resistive, inductive and capacitive loads in switching applications.
C compatible power switch for 12V and 24V DC applications.
Automotive rated.
Replaces electromechanical relays and discrete circuits.
Linear mode capability - the current-limiting protection circuitry is designed to de-activate at low
Vds, in order not to compromise the load current during normal operation. The design maximum
DC operating current is therefore determined by the thermal capability of the package/board
combination, rather than by the protection circuitry. This does not compromise the products
ability to self protect itself at low V
DS
.
Issue 4 - September 2006
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2
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BSP75N
Absolute maximum ratings
Parameter
Continuous drain-source voltage
Drain-source voltage for short circuit protection V
IN
= 5V
Drain-source voltage for short circuit protection V
IN
= 10V
Continuous input voltage
Peak input voltage
Operating temperature range
Storage temperature range
Power dissipation at T
A
=25°C
(a)
Power dissipation at T
A
=25°C
(c)
Continuous drain current @ V
IN
=10V; T
A
=25°C
(a)
Continuous drain current @ V
IN
=5V; T
A
=25°C
(a)
Continuous drain current @ V
IN
=5V; T
A
=25°C
(c)
Continuous source current (body diode)
(a)
Pulsed source current (body diode)
(b)
Unclamped single pulse inductive energy
Load dump protection
Electrostatic discharge (human body model)
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Symbol
V
DS
V
DS(SC)
V
DS(SC)
V
IN
V
IN
T
j
,
T
stg
P
D
P
D
I
D
I
D
I
D
I
S
I
S
E
AS
V
LoadDump
V
ESD
Limit
60
36
20
-0.2 ... +10
-0.2 ... +20
-40 to +150
-55 to +150
1.5
0.6
1.3
1.1
0.7
2.0
3.3
550
80
4000
E
40/150/56
Unit
V
V
V
V
V
°C
°C
W
W
A
A
A
A
A
mJ
V
V
Thermal resistance
Parameter
Junction to ambient
(a)
Junction to ambient
(b)
Junction to ambient
(c)
Symbol
R
JA
R
JA
R
JA
Limit
83
45
208
Unit
°C/W
°C/W
°C/W
NOTES:
(a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 board with a high coverage of single sided 2oz weight
copper. Allocation of 6cm
2
copper 33% to source tab and 66% to drain pin with tab and drain pin electrically isolated.
(b) For a device surface mounted on FR4 board as (a) and measured at t<=10s.
(c) For a device surface mounted on FR4 board with the minimum copper required for connections.
Issue 4 - September 2006
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BSP75N
Electrical characteristics (at T
AMB
= 25°C unless otherwise stated)
Parameter
Static characteristics
Drain-source clamp voltage
Off-state drain current
Off-state drain current
Input threshold voltage
(*)
Input current
Input current
Input current
Static drain-source on-state
resistance
Static drain-source on-state
resistance
Current limit
(†)
Current limit
(†)
Dynamic characteristics
Turn-on time (V
IN
to 90% I
D
)
Turn-off time (V
IN
to 90% I
D
)
Slew rate on (70 to 50% V
DD
)
Slew rate off (50 to 70% V
DD
)
Protection functions
(‡)
Required input voltage for
over temperature protection
Thermal overload trip
temperature
Thermal hysteresis
Unclamped single pulse
inductive energy T
j
=25°C
Unclamped single pulse
inductive energy T
j
=150°C
Inverse diode
Source drain voltage
V
SD
Symbol
V
DS(AZ)
I
DSS
I
DSS
V
IN(th)
I
IN
I
IN
I
IN
R
DS(on)
R
DS(on)
I
D(LIM)
I
D(LIM)
t
on
t
off
-dV
DS
/dt
on
DV
DS
/dt
off
0.7
1.0
Min.
60
Typ.
70
0.1
3
2.1
0.7
1.5
4
520
385
1.0
1.8
3.0
13
8
3.2
Max.
75
3
15
1.2
2.7
7
675
550
1.5
2.3
10
20
20
10
Unit
V
A
A
V
mA
mA
mA
m
m
A
A
s
s
V/ s
V/ s
Conditions
I
D
=10mA
V
DS
=12V, V
IN
=0V
V
DS
=32V, V
IN
=0V
V
DS
=V
GS
, I
D
=1mA
V
IN
=+5V
V
IN
=+7V
V
IN
=+10V
V
IN
=+5V, I
D
=0.7A
V
IN
=+10V, I
D
=0.7A
V
IN
=+5V, V
DS
>5V
V
IN
=+10V, V
DS
>5V
R
L
=22 , V
DD
=12V,
V
IN
=0 to +10V
R
L
=22 , V
DD
=12V,
V
IN
=+10V to 0V
R
L
=22 , V
DD
=12V,
V
IN
=0 to +10V
R
L
=22
,
V
DD
=12V,
V
IN
=+10V to 0V
1
V
PROT
T
JT
4.5
150
175
1
V
°C
°C
mJ
mJ
E
AS
550
200
I
D(ISO)
=0.7A,
V
DD
=32V
I
D(ISO)
=0.7A,
V
DD
=32V
V
IN
=0V, -I
D
=1.4A
1
V
NOTES:
(*) The drain current is limited to a reduced value when V
DS
exceeds a safe level.
(†) Protection features may operate outside spec for V
IN
<4.5V.
(‡) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
datasheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed
for continuous, repetitive operation.
Issue 4 - September 2006
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4
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BSP75N
Application information
The current-limit protection circuitry is designed to de-activate at low V
DS
to prevent the load
current from being unnecessarily restricted during normal operation. The design max DC
operating current is therefore determined by the thermal capability of the package/board
combination, rather than by the protection circuitry (see graph on page 7 'Typical Output
Characteristic'). This does not compromise the products ability to self protect at low V
DS
.
The overtemperature protection circuit trips at a minimum of 150°C. So the available package
dissipation reduces as the maximum required ambient temperature increases. This leads to the
following maximum recommended continuous operating currents.
Minimum copper area characteristics
For minimum copper condition as described in note (c)
Max. ambient temperature T
amb
25°C @ V
IN
= 5V
70°C @ V
IN
= 5V
85°C @ V
IN
= 5V
125°C @ V
IN
= 5V
Maximum continuous current
V
IN
= 5V
V
IN
= 10V
720
575
520
320
840
670
605
375
Issue 4 - September 2006
© Zetex Semiconductors plc 2006
5
www.zetex.com
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