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BSR40

Description
NPN medium power transistors
CategoryDiscrete semiconductor    The transistor   
File Size12KB,1 Pages
ManufacturerZetex Semiconductors
Websitehttp://www.zetex.com/
Download Datasheet Parametric Compare View All

BSR40 Overview

NPN medium power transistors

BSR40 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerZetex Semiconductors
package instructionSMALL OUTLINE, R-PSSO-F3
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)1 A
Collector-based maximum capacity12 pF
Collector-emitter maximum voltage60 V
ConfigurationSINGLE
Minimum DC current gain (hFE)30
JESD-30 codeR-PSSO-F3
JESD-609 codee0
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Maximum power dissipation(Abs)1 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formFLAT
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
Maximum off time (toff)1000 ns
Maximum opening time (tons)250 ns
VCEsat-Max0.5 V
SOT89 NPN SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 3 – FEBRUARY 1996
COMPLEMENTARY TYPES – BSR40 – BSR30
BSR42 – BSR32
C
PARTMARKING DETAIL –
BSR40 – AR1
BSR42 – AR3
C
B
7
BSR40
BSR42
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
V
CEO
V
EBO
I
CM
I
C
I
B
P
tot
T
j
:T
stg
V
CBO
SYMBOL
BSR40
70
60
5
2
1
100
1
-65 to +150
BSR42
90
80
UNIT
V
V
V
A
A
mA
W
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Collector-Base
BSR40
Breakdown Voltage BSR42
Collector-Emitter
BSR40
Breakdown Voltage BSR42
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Static Forward
Current Transfer Ratio
Collector Capacitance
Emitter Capacitence
Transition Frequency
Turn-On Time
Turn-Off Time
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
V
CE(sat)
V
BE(sat)
h
FE
MIN.
70
90
60
80
5
100
50
0.25
0.5
1.0
1.2
10
40
30
C
c
C
e
f
T
T
on
T
off
100
250
1000
120
12
90
pF
pF
MHz
ns
ns
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle
≤2%
For typical characteristics graphs see FMMT493 datasheet.
MAX.
UNIT
V
V
V
V
V
nA
µA
V
V
V
V
CONDITIONS.
I
C
=100µA
I
C
=100µA
I
C
=10mA
I
C
=10mA
I
E
=10µA
V
CB
=60V
V
CB
=60V, T
amb
=125°C
I
C
=150mA, I
B
=15mA
I
C
=500mA, I
B
=50mA
I
C
=150mA, I
B
=15mA
I
C
=500mA, I
B
=50mA
I
C
=100µA, V
CE
=5V
I
C
=100mA, V
CE
=5V
I
C
=500mA, V
CE
=5V
V
CB
=10V, f =1MHz
V
EB
=0.5V, f=1MHz
I
C
=50mA, V
CE
=10V
f =35MHz
V
CC
=20V, I
C
=100mA
I
B1
=-I
B2
=-5mA
3 - 67

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