BSS67-M7 datasheet, PDF - EEWORLD Datasheet

EEWORLDEEWORLD

Datasheet

Datasheet> All Categories > BSS67-M7

Preview

BSS67-M7: DescriptionSOT23 NPN SILICON PLANAR MEDIUM POWER SWITCHING TRANSISTORS; File Size32KB，1 Pages; ManufacturerZetex Semiconductors; Websitehttp://www.zetex.com/

Download Datasheet Compare View All

BSS67-M7 Overview

SOT23 NPN SILICON PLANAR MEDIUM POWER SWITCHING TRANSISTORS

Preview

Download Datasheet

View All

SOT23 NPN SILICON PLANAR MEDIUM

POWER SWITCHING TRANSISTORS

ISSUE 2 SEPTEMBER 1995

7

PARTMARKING DETAILS

C

B

SYMBOL

V

CBO

V

CEO

V

EBO

I

CM

I

C

I

B

P

TOT

t

j

:t

stg

SYMBOL

MIN.

MAX. UNIT

40

V

(BR)CBO

V

(BR)EBO

I

CES

V

CE(sat)

V

BE(sat)

BSS66

h

FE

0.65

60

6

50

0.20

0.30

0.85

0.95

V

nA

V

BSS66

BSS67

E

BSS66 -

BSS67 -

BSS66R -

BSS67R -

VALUE

60

40

6

200

100

50

330

-55 to +150

M6

M7

M8

M9

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

Continuous Collector Current

Base Current

Power Dissipation at T

amb

=25°C

Operating and Storage Temperature Range

PARAMETER

UNIT

V

mA

mW

°C

CONDITIONS.

I

C

=1mA

I

C

=10µA

I

E

=10µA

V

CES

=30V

I

C

=10mA, I

B

=1mA

I

C

=50mA, I

B

=5mA*

I

C

=10mA, I

B

=1mA

I

C

=50mA, I

B

=5mA*

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C).

Collector-Emitter Breakdown Voltage V

(BR)CEO

Collector-Base Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector- Emitter Cut-off Current

Collector-Emitter

Saturation Voltage

Base-Emitter Saturation Voltage

Static Forward Current

Transfer Ratio

20

35

50

30

15

Static Forward Current

Transfer Ratio

BSS67

h

FE

150

I

C

=100µA,

I

C

=1mA,

I

C

=10mA, V

CE

=1V

I

C

=50mA*,

I

C

=100mA*,

40

70

100

60

30

Transition Frequency

Collector-Base Capacitance

Emitter-Base Capacitance

Noise Figure

Switching times: Delay; Rise

Storage Time

Fall Time

BSS66

BSS67

f

T

C

obo

C

ibo

N

t

d

; t

f

t

s

t

f

Typ. 6

250

300

I

C

=100µA,

I

C

=1mA,

I

C

=10mA, V

CE

=1V

I

C

=50mA*,

I

C

=100mA*,

MHz

4

8

pF

dB

35

200

50

ns

I

C

=10mA, V

CE

=20V

f=100MHz

V

CB

=5V, f=100kHz

V

EB

=0.5V, f=100kHz

I

C

=100µA, V

CE

=5V

R

S

=1kΩ, f=10Hz to15.7 kHz

V

CC

=3V, I

C

=10mA

I

B1

= I

B2

=1mA

* Measured under pulsed conditions. Pulse width=300

µ

s. Duty cycle

≤

2%

PAGE NUMBER

BSS67-M7 Related Products

	BSS67-M7	BSS66	BSS66-M6	BSS67	BSS67R-M9	BSS66R-M8
Description	SOT23 NPN SILICON PLANAR MEDIUM POWER SWITCHING TRANSISTORS	SOT23 NPN SILICON PLANAR MEDIUM POWER SWITCHING TRANSISTORS	SOT23 NPN SILICON PLANAR MEDIUM POWER SWITCHING TRANSISTORS	SOT23 NPN SILICON PLANAR MEDIUM POWER SWITCHING TRANSISTORS	SOT23 NPN SILICON PLANAR MEDIUM POWER SWITCHING TRANSISTORS	SOT23 NPN SILICON PLANAR MEDIUM POWER SWITCHING TRANSISTORS

Recommended Resources

ring amplitude modulation circuit

Infrared two-dimensional temperature distribution detection circuit

HA1156 is used as a line scanning circuit for black and white televisions

Induction alarm doorbell circuit

Using color TV remote control to control toy car circuit

Shortcut: E0 E1 E2 E3 E4 E5 E6 E7 E8 E9 EA EB EC ED EE EF EG EH EI EJ EK EL EM EN EO EP EQ ER ES ET EU EV EW EX EY EZ F0 F1 F2 F3 F4 F5 F6 F7 F8 F9 FA FB FC FD FE FF FG FH FI FJ FK FL FM FN FO FP FQ FR FS FT FU FV FW FX FY FZ G0 G1 G2 G3 G4 G5 G6 G7 G8 G9 GA GB GC GD GE GF GG GH GI GJ GK GL GM GN GO GP GQ GR GS GT GU GV GW GX GZ H0 H1 H2 H3 H4 H5 H6 H7 H8 HA HB HC HD HE HF HG HH HI HJ HK HL HM HN HO HP HQ HR HS HT HU HV HW HX HY HZ I1 I2 I3 I4 I5 I6 I7 IA IB IC ID IE IF IG IH II IK IL IM IN IO IP IQ IR IS IT IU IV IW IX J0 J1 J2 J6 J7 JA JB JC JD JE JF JG JH JJ JK JL JM JN JP JQ JR JS JT JV JW JX JZ K0 K1 K2 K3 K4 K5 K6 K7 K8 K9 KA KB KC KD KE KF KG KH KI KJ KK KL KM KN KO KP KQ KR KS KT KU KV KW KX KY KZ

Popular Components