STD12NF06L-1
N-channel 60 V, 0.07
Ω
typ.,12 A,
STripFET™ II Power MOSFET in an IPAK package
Datasheet
-
production data
Features
Order code
STD12NF06L-1
V
DS
60 V
R
DS(on)
max.
0.09
Ω
I
D
12 A
•
Exceptional dv/dt capability
•
Low gate charge
Figure 1. Internal schematic diagram
Applications
•
Switching applications
Description
This Power MOSFET has been developed using
STMicroelectronics’ unique STripFET™ process,
which is specifically designed to minimize input
capacitance and gate charge. This renders the
device suitable for use as primary switch in
advanced high-efficiency isolated DC-DC
converters for telecom and computer
applications, and applications with low gate
charge driving requirements.
Table 1. Device summary
Order code
STD12NF06L-1
Marking
D12NF06L
Package
IPAK
Packaging
Tube
November 2014
This is information on a product in full production.
DocID026644 Rev 3
1/14
www.st.com
Contents
STD12NF06L-1
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................. 6
3
4
5
Test circuit
................................................ 8
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
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DocID026644 Rev 3
STD12NF06L-1
Electrical ratings
1
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
V
DS
V
GS
I
D
I
D
I
DM(1)
P
TOT
dv/dt
(2)
E
AS(3)
T
stg
T
J
Parameter
Drain-source voltage
Gate-source voltage
Drain current (continuous) at T
C
= 25 °C
Drain current (continuous) at
T
C
= 100 °C
Drain current (pulsed)
Total dissipation at T
C
= 25 °C
Derating factor
Peak diode recovery voltage slope
Single pulse avalanche energy
Storage temperature
-55 to 175
Max. operating junction temperature
°C
Value
60
± 16
12
8.5
48
30
0.2
15
100
Unit
V
V
A
A
A
W
W/°C
V/ns
mJ
1. Pulse width limited by safe operating area
2. I
SD
≤
12 A, di/dt
≤
200 A/µs, V
DS
≤
40 V, T
J
≤
T
JMAX
3. Starting T
J
= 25
°
C, I
D
= 6 A, V
DD
= 30 V
Table 3. Thermal data
Symbol
Parameter
Value
5
100
Unit
°C/W
°C/W
R
thj-case
Thermal resistance junction-case max.
R
thj-amb
Thermal resistance junction-ambient
max.
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Electrical characteristics
STD12NF06L-1
2
Electrical characteristics
(T
CASE
= 25 °C unless otherwise specified)
Table 4. On/off states
Symbol
V
(BR)DSS
Parameter
Drain-source breakdown
voltage
Zero gate voltage drain
current
Test conditions
V
GS
= 0, I
D
= 250
μA,
V
GS
= 0, V
DS
= 60
V
GS
= 0, V
DS
= 60
T
C
= 125 °C
V
DS
= 0
V
GS
= ± 16 V
V
DS
= V
GS
, I
D
= 250 µA
V
GS
= 10 V, I
D
= 6 A
V
GS
= 5 V, I
D
= 6 A
1
0.07
0.08
Min.
60
1
10
±100
2
0.09
0.10
Typ.
Max.
Unit
V
µA
µA
nA
V
Ω
Ω
I
DSS
I
GSS
V
GS(th)
R
DS(on)
Gate body leakage current
Gate threshold voltage
Static drain-source
on-resistance
Table 5. Dynamic
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
Parameter
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
V
DS
= 25 V, f = 1 MHz,
V
GS
= 0
Test conditions
Min.
Typ.
350
75
30
V
DD
= 48 V, I
D
= 12 A
V
GS
= 5 V
(see
Figure 14)
7.5
2.5
3.0
10
Max.
Unit
pF
pF
pF
nC
nC
nC
Table 6. Switching times
Symbol
t
d(on)
t
r
t
d(off)
t
f
Parameter
Turn-on delay time
Rise time
Turn-off delay time
Fall time
V
DD
= 30 V, I
D
= 6 A,
R
G
= 4.7
Ω,
V
GS
= 4.5 V
(see
Figure 13)
Test conditions
Min.
Typ.
10
35
20
13
Max.
Unit
ns
ns
ns
ns
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DocID026644 Rev 3
STD12NF06L-1
Electrical characteristics
Table 7. Source-drain diode
Symbol
I
SD
I
SDM (1)
V
SD(2)
t
rr
Q
rr
I
RRM
Parameter
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
= 12 A, V
GS
= 0
I
SD
= 12 A,
di/dt = 100 A/µs,
V
DD
= 16 V, T
J
= 150 °C
(see
Figure 15)
50
65
2.5
Test conditions
Min.
Typ.
Max.
12
48
1.5
Unit
A
A
V
ns
nC
A
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%.
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