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BST82

Description
SMALL SIGNAL, FET
CategoryDiscrete semiconductor    The transistor   
File Size19KB,1 Pages
ManufacturerZetex Semiconductors
Websitehttp://www.zetex.com/
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BST82 Overview

SMALL SIGNAL, FET

BST82 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerZetex Semiconductors
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codeunknow
ECCN codeEAR99
ConfigurationSINGLE
Minimum drain-source breakdown voltage80 V
Maximum drain current (Abs) (ID)0.175 A
Maximum drain current (ID)0.175 A
Maximum drain-source on-resistance10 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G3
JESD-609 codee0
Humidity sensitivity level1
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)0.3 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
BST82
I
Issue 2 - October 1997
PARTMARKING DETAIL – O2
C
B
E
SOT23 N CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
I
BST82
SOT23
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain Source Voltage
Drain Source Voltage
(non repetitive peak tp
2ms)
Continuous Drain Current at T
amb
=25°C
Drain Current Peak
Gate-Source Voltage
Max Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
V
DS
V
DS(sm)
I
D
I
DM
V
GS
P
D
T
j
:T
stg
SYMBOL
VALUE
80
100
175
600
±
20
300
-55 to +150
UNIT
V
V
mA
mA
V
mW
°C
ELECTRIAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Drain Source
Breakdown Voltage
Gate Source
Threshold Voltage
Gate Body Leakage
Emitter Cut-Off
Current
Static Drain-Source
On-state Resistance
Transfer Admittance
Input Capacitance (2)
SYMBOL
B
VDSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
| yfs |
C
iss
Common Source
C
oss
Output Capacitance (2)
Reverse Transfer
Capacitance (2)
Switching Times
C
rss
T
on
T
off
7
150
15
13
3
4
4
30
20
6
10
10
MIN.
80
1.5
3.5
100
1
10
TYP.
MAX.
UNIT
V
V
nA
µA
mS
pF
pF
pF
ns
ns
I
D
=175mA, V
DD
=50V
V
GS
=0 to 10V
(1) Swithcing times measured at 150Ω source impedance and <5ns rise time on a pulse generator
(2) Sample test
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle
2%
V
DS
=10V, V
GS
=0V
f=1MHz
CONDITIONS.
I
C
=100µA
I
D
=1mA, V
DS
=V
GS
VGS=20V
V
DS
=60V
I
D
=150mA, V
GS
=5V
I
D
=175mA, V
DS
=5V
Zetex plc.
Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom.
Telephone: (44)161-627 5105 (Sales), (44)161-627 4963 (General Enquiries)
Facsimile: (44)161-627 5467
These are supported by
agents and distributors in
major countries world-wide
Zetex plc 1995
Zetex GmbH
Streitfeldstraße 19
D-81673 München
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
Zetex Inc.
87 Modular Avenue
Commack NY11725
Telephone: (516) 543-7100
Fax: (516) 864-7630
Zetex (Asia) Ltd.
3510 Metroplaza, Tower 2
Hing Fong Road, Kwai Fong
Telephone:(852) 26100 611
Fax: (852) 24250 494
©
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied
or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or
services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any
product or service.

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