FCX1053A
SOT89 NPN medium power transistor
Summary
BV
CEO
= 75V
R
CE(sat)
= 78m
I
C
= 3A
Description
This medium power NPN transistor, offered in the SOT89 package
provides high current and low saturation voltage making it ideal for use
in various driving and power management applications.
Features
•
•
•
•
•
Extremely low equivalent on-resistance; R
CE(sat)
= 7.8m
3 Amps continuous current
Up to 10 amps peak current
Very low saturation voltages
Excellent h
FE
characteristics up to 10 amps
at 4.5A
C
B
E
Applications
•
•
•
•
•
•
•
Emergency lighting circuits
Motor driving (including DC fans)
Solenoid, relay and actuator drivers
DC-DC modules
Backlight inverters
Power switches
MOSFET gate drivers
E
C
C
B
Pinout - top view
Ordering information
Device
FCX1053ATA
Reel size
(inches)
7
Tape width
(mm)
12
Quantity per reel
1,000
Device marking
053
Issue 2 - July 2006
© Zetex Semiconductors plc 2006
1
www.zetex.com
FCX1053A
Absolute maximum ratings
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Continuous collector current
(a)
Peak pulse current
Power dissipation at T
amb
= 25°C
(a)
Linear derating factor
Power dissipation at T
amb
= 25°C
(b)
Linear derating factor
Operating and storage temperature range
T
j
;T
stg
P
D
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
D
Value
150
75
5
3
10
1.6
13
2.0
16
-55 to +150
Unit
V
V
V
A
A
W
mW/°C
W
mW/°C
°C
Thermal resistance
Parameter
Junction to ambient
(a)
Junction to ambient
(b)
Symbol
R
JA
R
JA
Value
72
62
Unit
°C/W
°C/W
NOTES:
(a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
(b) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
Issue 2 - July 2006
© Zetex Semiconductors plc 2006
2
www.zetex.com
FCX1053A
Thermal characteristics
Issue 2 - July 2006
© Zetex Semiconductors plc 2006
3
www.zetex.com
FCX1053A
Electrical characteristics (at T
amb
= 25°C unless otherwise stated)
Parameter
Collector-base
breakdown voltage
Collector-emitter
breakdown voltage
Collector-emitter
breakdown voltage
Collector-emitter
breakdown voltage
Emitter-base breakdown
voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter cut-off
current
Collector-emitter
saturation voltage
Symbol
V
(BR)CBO
V
CES
V
CEO
V
CEV
V
(BR)EBO
I
CBO
I
EBO
I
CES
V
CE(sat)
Min.
150
150
75
150
5
Typ.
250
250
100
250
8.8
0.9
0.3
1.5
21
55
150
160
350
Base-emitter saturation
voltage
Base-emitter turn-on
voltage
Static forward current
transfer ratio
V
BE(sat)
V
BE(on)
h
FE
270
300
300
40
900
825
440
450
450
60
20
Switching times
t
on
t
off
Transition frequency
Output capacitance
f
T
C
OBO
162
900
140
21
30
2%.
Max.
Unit
V
V
V
V
V
Conditions
I
C
= 100 A
I
C
= 100 A
I
C
= 10mA
I
C
= 100 A, V
EB
= 1V
I
E
= 100 A
V
CB
= 120V
V
EB
= 4V
V
CES
= 120V
I
C
= 0.2A, I
B
= 20mA
(*)
I
C
= 0.5A, I
B
= 20mA
(*)
I
C
= 1A, I
B
= 10mA
(*)
I
C
= 2A, I
B
= 100mA
(*)
I
C
= 4.5A, I
B
= 200mA
(*)
I
C
= 3A, I
B
= 100mA
(*)
I
C
= 3A, V
CE
= 2V
(*)
I
C
= 10mA, V
CE
= 2V
(*)
10
10
10
30
75
200
210
440
1000
950
nA
nA
nA
mV
mV
mV
mV
mV
mV
mV
1200
I
C
= 0.5A, V
CE
= 2V
(*)
I
C
= 1A, V
CE
= 2V
(*)
I
C
= 4.5A, V
CE
= 2V
(*)
I
C
= 10A, V
CE
= 2V
(*)
ns
ns
MHz
pF
I
C
= 2A, I
B1
= I
B2
=
V
CC
= 50V
I
C
= 2A, I
B1
= I
B2
=
V
CC
= 50V
20mA,
20mA,
I
C
= 50mA, V
CE
= 10V,
f = 100MHz
V
CB
= 10V, f = 1MHz
NOTES:
(*) Measured under pulsed conditions. Pulse width = 300 s. Duty
Issue 2 - July 2006
© Zetex Semiconductors plc 2006
4
www.zetex.com
FCX1053A
Typical characteristics
Issue 2 - July 2006
© Zetex Semiconductors plc 2006
5
www.zetex.com
京公网安备 11010802033920号
EEWORLD
